Order Article Reprints

Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, et al. Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors. Nanomaterials. 2020; 10(4):793. https://doi.org/10.3390/nano10040793

Li, Junjie, Yongliang Li, Na Zhou, Wenjuan Xiong, Guilei Wang, Qingzhu Zhang, Anyan Du, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, and et al. 2020. "Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors" Nanomaterials 10, no. 4: 793. https://doi.org/10.3390/nano10040793

Li, J., Li, Y., Zhou, N., Xiong, W., Wang, G., Zhang, Q., Du, A., Gao, J., Kong, Z., Lin, H., Xiang, J., Li, C., Yin, X., Wang, X., Yang, H., Ma, X., Han, J., Zhang, J., Hu, T., ... Radamson, H. H. (2020). Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors. Nanomaterials, 10(4), 793. https://doi.org/10.3390/nano10040793