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Journal: Symmetry, 2019
Volume: 11
Number: 154

Article: The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET
Authors: by Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li and Liang Fang
Link: https://www.mdpi.com/2073-8994/11/2/154

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