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Journal: Symmetry, 2019
Volume: 11
Number: 154
Article:
The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET
Authors:
by
Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li and Liang Fang
Link:
https://www.mdpi.com/2073-8994/11/2/154
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