Next Article in Journal
Fixed Points for Multivalued Convex Contractions on Nadler Sense Types in a Geodesic Metric Space
Previous Article in Journal
Proteolysis of β-lactoglobulin by Trypsin: Simulation by Two-Step Model and Experimental Verification by Intrinsic Tryptophan Fluorescence
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Symmetry 2019, 11(2), 154; https://doi.org/10.3390/sym11020154

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

1
College of Computer, National University of Defense Technology, Changsha 410073, Hunan, China
2
Hunan University of Humanities Science and Technology, Loudi 417000, Hunan, China
*
Author to whom correspondence should be addressed.
Received: 27 December 2018 / Revised: 22 January 2019 / Accepted: 28 January 2019 / Published: 30 January 2019
Full-Text   |   PDF [1916 KB, uploaded 30 January 2019]   |  

Abstract

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET. View Full-Text
Keywords: single-event transient (SET); deep n+ well (DNW); bipolar effect; triple-well technology single-event transient (SET); deep n+ well (DNW); bipolar effect; triple-well technology
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Zhang, J.; Chen, J.; Huang, P.; Li, S.; Fang, L. The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry 2019, 11, 154.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Symmetry EISSN 2073-8994 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top