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Symmetry 2019, 11(2), 154;

The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

College of Computer, National University of Defense Technology, Changsha 410073, Hunan, China
Hunan University of Humanities Science and Technology, Loudi 417000, Hunan, China
Author to whom correspondence should be addressed.
Received: 27 December 2018 / Revised: 22 January 2019 / Accepted: 28 January 2019 / Published: 30 January 2019
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In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET. View Full-Text
Keywords: single-event transient (SET); deep n+ well (DNW); bipolar effect; triple-well technology single-event transient (SET); deep n+ well (DNW); bipolar effect; triple-well technology

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Zhang, J.; Chen, J.; Huang, P.; Li, S.; Fang, L. The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry 2019, 11, 154.

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