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Journal: Crystals, 2019
Volume: 9
Number: 328
Article:
Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes
Authors:
by
Ivana Capan, Yuichi Yamazaki, Yuya Oki, Tomislav Brodar, Takahiro Makino and Takeshi Ohshima
Link:
https://www.mdpi.com/2073-4352/9/7/328
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