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Journal: Crystals, 2019
Volume: 9
Number: 328

Article: Minority Carrier Trap in n-Type 4H–SiC Schottky Barrier Diodes
Authors: by Ivana Capan, Yuichi Yamazaki, Yuya Oki, Tomislav Brodar, Takahiro Makino and Takeshi Ohshima
Link: https://www.mdpi.com/2073-4352/9/7/328

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