Chen, H.; Zhang, Y.; Zhou, R.; Wang, Z.; Lu, C.; Li, Z.; Zhang, B.
A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism. Crystals 2023, 13, 778.
https://doi.org/10.3390/cryst13050778
AMA Style
Chen H, Zhang Y, Zhou R, Wang Z, Lu C, Li Z, Zhang B.
A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism. Crystals. 2023; 13(5):778.
https://doi.org/10.3390/cryst13050778
Chicago/Turabian Style
Chen, Hang, Yourun Zhang, Rong Zhou, Zhi Wang, Chao Lu, Zehong Li, and Bo Zhang.
2023. "A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism" Crystals 13, no. 5: 778.
https://doi.org/10.3390/cryst13050778
APA Style
Chen, H., Zhang, Y., Zhou, R., Wang, Z., Lu, C., Li, Z., & Zhang, B.
(2023). A Novel Low On–State Resistance Si/4H–SiC Heterojunction VDMOS with Electron Tunneling Layer Based on a Discussion of the Hetero–Transfer Mechanism. Crystals, 13(5), 778.
https://doi.org/10.3390/cryst13050778
