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Journal: CrystalsVolume: 10Number: 1100
Article: In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal
- Authors:
- Sepideh Faraji 1,2,*,
- Elke Meissner 1,2 and
- Jochen Friedrich 1
- et al.
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