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Journal: Crystals, 2020
Volume: 10
Number: 1100
Article:
In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal
Authors:
by
Sepideh Faraji, Elke Meissner, Roland Weingärtner, Sven Besendörfer and Jochen Friedrich
Link:
https://www.mdpi.com/2073-4352/10/12/1100
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