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Journal: CrystalsVolume: 10Number: 1100
Article: In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal
  • Authors:
  • Sepideh Faraji 1,2,*,
  • Elke Meissner 1,2 and
  • Jochen Friedrich 1
  • et al.
Link: https://www.mdpi.com/2073-4352/10/12/1100

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