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Journal: Micromachines, 2023
Volume: 14
Number: 940

Article: Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate
Authors: by Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang and Yue Hao
Link: https://www.mdpi.com/2072-666X/14/5/940

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