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Journal: Micromachines, 2021
Volume: 12
Number: 614
Article:
Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array
Authors:
by
Zhisheng Chen, Renjun Song, Qiang Huo, Qirui Ren, Chenrui Zhang, Linan Li and Feng Zhang
Link:
https://www.mdpi.com/2072-666X/12/6/614
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