Order Article Reprints

Hsu L-H, Lai Y-Y, Tu P-T, Langpoklakpam C, Chang Y-T, Huang Y-W, Lee W-C, Tzou A-J, Cheng Y-J, Lin C-H, et al. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. Micromachines. 2021; 12(10):1159. https://doi.org/10.3390/mi12101159

Hsu, Lung-Hsing, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee, An-Jye Tzou, Yuh-Jen Cheng, Chun-Hsiung Lin, and et al. 2021. "Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration" Micromachines 12, no. 10: 1159. https://doi.org/10.3390/mi12101159

Hsu, L.-H., Lai, Y.-Y., Tu, P.-T., Langpoklakpam, C., Chang, Y.-T., Huang, Y.-W., Lee, W.-C., Tzou, A.-J., Cheng, Y.-J., Lin, C.-H., Kuo, H.-C., & Chang, E. Y. (2021). Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. Micromachines, 12(10), 1159. https://doi.org/10.3390/mi12101159