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Open AccessArticle

Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation

1
Micro/Nano Process Group, Korea Institute of Industrial Technology (KITECH), Ansan 15588, Korea
2
Surface Technology Group, Korea Institute of Industrial Technology (KITECH), Incheon 21999, Korea
3
Department of Mechanical Engineering, Hanyang University, Seoul 04763, Korea
4
Department of Mechanical Engineering, State University of New York, Stony Brook, NY 11794, USA
*
Authors to whom correspondence should be addressed.
Micromachines 2020, 11(1), 88; https://doi.org/10.3390/mi11010088
Received: 14 December 2019 / Revised: 3 January 2020 / Accepted: 6 January 2020 / Published: 13 January 2020
(This article belongs to the Special Issue Selected Papers from the ICAE 2019)
In this study, silicon nitride thin films are deposited on organic polyethylene-naphthalate (PEN) substrates by laser assisted plasma enhanced chemical vapor deposition (LAPECVD) at a low temperature (150 °C) for the purpose of evaluating the encapsulation performance. A plasma generator is placed above the sample stage as conventional plasma enhanced chemical vapor deposition (PECVD) configuration, and the excimer laser beam of 193 nm wavelength illuminated in parallel to the sample surface is coupled to the reaction zone between the sample and plasma source. Major roles of the laser illumination in LAPECVD process are to compete with or complement the plasma decomposition of reactant gases. While a laser mainly decomposes ammonia molecules in the plasma, it also contributes to the photolysis of silane in the plasma state, possibly through the resulting hydrogen radicals and the excitation of intermediate disilane products. It will also be shown that the LAPECVD with coupled laser illumination of 193 nm wavelength improves the deposition rate of silicon nitride thin film, and the encapsulation performance evaluated via the measurement of water vapor transmission rate (WVTR). View Full-Text
Keywords: laser assisted plasma enhanced chemical vapor deposition; silicon nitride; low temperature encapsulation; silane photolysis; ArF excimer laser laser assisted plasma enhanced chemical vapor deposition; silicon nitride; low temperature encapsulation; silane photolysis; ArF excimer laser
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An, K.; Lee, H.-N.; Cho, K.H.; Lee, S.-W.; Hwang, D.J.; Kang, K.-T. Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation. Micromachines 2020, 11, 88.

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