Next Article in Journal
Auxiliary Optomechanical Tools for 3D Cell Manipulation
Previous Article in Journal
Role of a 193 nm ArF Excimer Laser in Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of SiNx for Low Temperature Thin Film Encapsulation
Open AccessArticle

A Novel Characterization and Performance Measurement of Memristor Devices for Synaptic Emulators in Advanced Neuro-Computing

1
Department of Nanoscience and Engineering, Centre for Nano Manufacturing, Inje university, Gimhae 50834, Korea
2
Department of Electronics and Communication Engineering, National Institute of Technology Karnataka, Surathkal, Mangaluru 575025, Karnataka, India
3
Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania 799046, Tripura, India
*
Authors to whom correspondence should be addressed.
Micromachines 2020, 11(1), 89; https://doi.org/10.3390/mi11010089
Received: 5 December 2019 / Revised: 10 January 2020 / Accepted: 11 January 2020 / Published: 13 January 2020
The advanced neuro-computing field requires new memristor devices with great potential as synaptic emulators between pre- and postsynaptic neurons. This paper presents memristor devices with TiO2 Nanoparticles (NPs)/Ag(Silver) and Titanium Dioxide (TiO2) Nanoparticles (NPs)/Au(Gold) electrodes for synaptic emulators in an advanced neurocomputing application. A comparative study between Ag(Silver)- and Au(Gold)-based memristor devices is presented where the Ag electrode provides the improved performance, as compared to the Au electrode. Device characterization is observed by the Scanning Electron Microscope (SEM) image, which displays the grown electrode, while the morphology of nanoparticles (NPs) is verified by Atomic Force Microscopy (AFM). The resistive switching (RS) phenomena observed in Ag/TiO2 and Au/TiO2 shows the sweeping mechanism for low resistance and high resistance states. The resistive switching time of Au/TiO2 NPs and Ag/TiO2 NPs is calculated, while the theoretical validation of the memory window demonstrates memristor behavior as a synaptic emulator. Measurement of the capacitor–voltage curve shows that the memristor with Ag contact is a good candidate for charge storage as compared to Au. The classification of 3 × 3 pixel black/white image is demonstrated by the 3 × 3 cross bar memristor with pre- and post-neuron system. The proposed memristor devices with the Ag electrode demonstrate the adequate performance compared to the Au electrode, and may present noteworthy advantages in the field of neuromorphic computing. View Full-Text
Keywords: neuro-computing; nanoparticles; synaptic and neurons; titanium dioxide (TiO2) neuro-computing; nanoparticles; synaptic and neurons; titanium dioxide (TiO2)
Show Figures

Figure 1

MDPI and ACS Style

Al-Shidaifat, A.; Chakrabartty, S.; Kumar, S.; Acharjee, S.; Song, H. A Novel Characterization and Performance Measurement of Memristor Devices for Synaptic Emulators in Advanced Neuro-Computing. Micromachines 2020, 11, 89.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop