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Journal: Materials, 2022
Volume: 15
Number: 654
654
Article: Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range
Authors: by Shouyi Wang, Qi Zhou, Kuangli Chen, Pengxiang Bai, Jinghai Wang, Liyang Zhu, Chunhua Zhou, Wei Gao and Bo Zhang
Link: https://www.mdpi.com/1996-1944/15/2/654

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