Order Article Reprints

Kumar S, Zhang X, Mariswamy VK, Reddy VR, Kandasami A, Nimmala A, Rao SVSN, Tang J, Ramakrishnna S, Sannathammegowda K. Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials. 2020; 13(6):1299. https://doi.org/10.3390/ma13061299

Kumar, Santosh, Xiang Zhang, Vinay Kumar Mariswamy, Varra Rajagopal Reddy, Asokan Kandasami, Arun Nimmala, S V S Nageswara Rao, Jue Tang, Seeram Ramakrishnna, and Krishnaveni Sannathammegowda. 2020. "Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes" Materials 13, no. 6: 1299. https://doi.org/10.3390/ma13061299

Kumar, S., Zhang, X., Mariswamy, V. K., Reddy, V. R., Kandasami, A., Nimmala, A., Rao, S. V. S. N., Tang, J., Ramakrishnna, S., & Sannathammegowda, K. (2020). Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes. Materials, 13(6), 1299. https://doi.org/10.3390/ma13061299