Order Article Reprints

Rigaud-Minet F, Buckley J, Vandendaele W, Charles M, Jaud M-A, Rémont E, Morel H, Planson D, Gwoziecki R, Gillot C, et al. Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors. Energies. 2022; 15(19):7062. https://doi.org/10.3390/en15197062

Rigaud-Minet, Florian, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, and et al. 2022. "Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors" Energies 15, no. 19: 7062. https://doi.org/10.3390/en15197062

Rigaud-Minet, F., Buckley, J., Vandendaele, W., Charles, M., Jaud, M.-A., Rémont, E., Morel, H., Planson, D., Gwoziecki, R., Gillot, C., & Sousa, V. (2022). Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors. Energies, 15(19), 7062. https://doi.org/10.3390/en15197062