SPAD-Based Sensors and Techniques for Enhanced Sensing Applications

Dear Colleagues,

The integration of Single Photon Avalanche Diodes in standard CMOS processes (CMOS-SPADs) provides unique advantages over other single photon detection technologies such as photo-multiplier tubes or superconducting nanowire single-photon detectors. Namely, CMOS SPADs can be arranged into 1- or 2-D arrays of channels working in parallel, their output signal can be locally processed (e.g., by highly accurate timing circuits) and they inherit all the advantages of CMOS technology, such as compact size, the capability to operate over a wide temperature range, and the possibility to guarantee mass volume productions at a low cost.

For these reasons, CMOS-SPADs are now replacing other single-photon technologies in many time-resolved and other enhanced sensing applications, including depth sensing/LiDAR, medical imaging (FLIM, Raman spectroscopy, PET), high dynamic range imaging and quantum sensing (e.g., super-resolution microscopy, ghost imaging, non-line-of-sight imaging).

This special Issue addresses recent advancements in the following areas:

• CMOS-SPAD architectures for enhanced sensing applications.
• Innovative techniques for the processing of data generated by CMOS-SPAD architectures.
• Circuits for CMOS-SPAD sensors (e.g., time-to-digital converters, DCDC converters).
• Experimental activity using CMOS-SPADs.

Dr. Leonardo Gasparini
Dr. Alessandro Tontini
Guest Editors

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