Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

remove_circle_outline
remove_circle_outline
remove_circle_outline

Search Results (257)

Search Parameters:
Keywords = vacuum electronic device

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
19 pages, 6782 KB  
Article
Automated Flushing System for Post-Processing in Microfluidic Device Fabrication
by Sebastian Zapata, Brady Goenner, Dallin S. Miner, Bruce K. Gale and Gregory P. Nordin
Micromachines 2026, 17(5), 538; https://doi.org/10.3390/mi17050538 - 28 Apr 2026
Abstract
Post-processing remains a major bottleneck in the fabrication of microfluidic devices using Digital Light Processing Stereolithography (DLP-SLA) 3D printing, where unpolymerized resin trapped within internal structures must be removed without damaging delicate features such as thin membranes, valves, and pumps. Manual flushing is [...] Read more.
Post-processing remains a major bottleneck in the fabrication of microfluidic devices using Digital Light Processing Stereolithography (DLP-SLA) 3D printing, where unpolymerized resin trapped within internal structures must be removed without damaging delicate features such as thin membranes, valves, and pumps. Manual flushing is slow, inconsistent, and prone to structural failure, especially as device complexity and port counts increase. Here, we present the first fully automated flushing system for DLP-SLA microfluidic devices, enabled by a standardized chip-to-chip (C2C) interconnect architecture and an electronically controlled pneumatic routing platform. A reusable 32-port flushing interface chip provides alignment, sealing, and modular coupling to arbitrary device chips through integrated microgaskets, while a network of electronic pressure controllers, differential pressure sensors, and multi-port rotary valves enable precise, programmable application of pressure, vacuum, and solvent conditions. We introduce a fluidic-circuit model of the system that relates applied pressure to the pressure drop across device structures and experimentally validate this model using channels with varying fluidic resistances. Using this platform, we demonstrate robust flushing of both passive (straight and serpentine channels) and active (valves, pumps) microfluidic elements, as well as application-specific devices including mixers and concentration-gradient generators. Our system eliminates manual handling, improves valve membrane survival, and provides repeatable flushing across a broad range of device geometries. This work establishes a scalable foundation for automated post-processing in 3D-printed microfluidics and significantly advances the practicality of DLP-SLA fabrication for complex, multi-layered microfluidic devices. Full article
Show Figures

Figure 1

14 pages, 2540 KB  
Article
A Readout Circuit Applied for an Ultrafast CMOS Image Sensor
by Houzhi Cai, Zhaoyang Xie, Zhiying Deng, Youlin Ma and Lijuan Xiang
Photonics 2026, 13(4), 390; https://doi.org/10.3390/photonics13040390 - 18 Apr 2026
Viewed by 281
Abstract
Microchannel plate gated framing camera is commonly used in inertial confinement fusion diagnostics. However, it is a vacuum electronic device with bulkiness and non-single-line-of-sight imaging. To reduce the size of the camera and achieve a single line of sight image, a CMOS image [...] Read more.
Microchannel plate gated framing camera is commonly used in inertial confinement fusion diagnostics. However, it is a vacuum electronic device with bulkiness and non-single-line-of-sight imaging. To reduce the size of the camera and achieve a single line of sight image, a CMOS image sensor composed of a pixel unit and a readout circuit is presented to form the framing camera. The CMOS image sensor has a 32 × 32 × 4 pixel array with ultrashort shutter-time and four-frame imaging. The pixel array and analog to digital converter (ADC) readout circuit are designed using a standard 0.18 μm CMOS process. The pixel array includes 5T structured pixel units, a voltage-controlled delay, a clock tree and the row decoding scan circuits. A temporal resolution of 65 ps for the pixel circuit is achieved. The ADC readout circuit is composed of a counter, a comparator, a ramp generator and a register, which operates at a sampling frequency of 24.41 kS/s. An effective number of bits of 11.3, a spurious free dynamic range (SFDR) of 73.4 dB, and a signal-to-noise ratio (SNR) of 70.0 dB for the ADC are achieved. The CMOS image sensor will provide a novel and important imaging method for the field of ultrafast science. Full article
(This article belongs to the Special Issue Advances in Ultrafast Science and Applications)
Show Figures

Figure 1

13 pages, 2935 KB  
Article
Research on Strontium-Doped Scandate Cathode Based on Computer Simulation
by Zepeng Li, Na Li, Xin Sun, Guanghui Hao, Ke Zhang and Jinjun Feng
Electronics 2026, 15(8), 1722; https://doi.org/10.3390/electronics15081722 - 18 Apr 2026
Viewed by 218
Abstract
Scandate cathodes have garnered significant attention for their exceptional low-temperature, high-current-density emission characteristics. However, their widespread deployment in vacuum electronic devices is currently hindered by stringent vacuum requirements and susceptibility to ion bombardment. To enhance the engineering applicability of scandate cathodes, this study [...] Read more.
Scandate cathodes have garnered significant attention for their exceptional low-temperature, high-current-density emission characteristics. However, their widespread deployment in vacuum electronic devices is currently hindered by stringent vacuum requirements and susceptibility to ion bombardment. To enhance the engineering applicability of scandate cathodes, this study employs first-principles density functional theory (DFT) to model the surface microstructures of strontium (Sr)–scandium (Sc) co-doped systems. Guided by simulation predictions regarding surface elemental ratios, corresponding emission active materials and cathode samples were fabricated. A systematic comparison between theoretical calculations and experimental measurements reveals a critical trade-off: while increasing Sr content enhances structural stability (indicated by lower formation energies), it concurrently increases the work function. Consequently, an optimal Sr doping level of approximately 2 wt% is identified, which significantly improves emission current density without compromising stability. Cathodes fabricated with this optimized composition were tested in a practical electron gun configuration. Results demonstrate that under low-temperature conditions (1000 °C) and wide-pulse operation (2 ms), the cathode achieves an emission current density of 21.57 A/cm2. These findings validate the efficacy of simulation-guided material design and highlight the potential of Sr-doped scandate cathodes for high-power microwave applications. Full article
(This article belongs to the Section Electronic Materials, Devices and Applications)
Show Figures

Figure 1

15 pages, 3529 KB  
Article
Structure and Optical Properties of TiO2 Films Prepared by Electron Beam Evaporation of Al2O3-Doped Ti3O5
by Cheng Peng, Xingqi Wang, Zhixia Shi, Huaying Duan, Bitian Zhang and Yanxi Yin
Materials 2026, 19(8), 1614; https://doi.org/10.3390/ma19081614 - 17 Apr 2026
Viewed by 232
Abstract
The crystal structure regulation of Ti3O5 by Al2O3 doping and its effect on the optical properties of TiO2 films prepared by electron beam evaporation were systematically studied. Ti3O5 coating materials with different Al [...] Read more.
The crystal structure regulation of Ti3O5 by Al2O3 doping and its effect on the optical properties of TiO2 films prepared by electron beam evaporation were systematically studied. Ti3O5 coating materials with different Al2O3 doping contents (0–50 at%) were prepared by vacuum melting, and the corresponding TiO2 films were deposited on K9 glass substrates via electron beam vacuum evaporation. The phase structure, phase transition temperature, chemical composition and optical properties of the materials and films were characterized by XRD, DSC, EDS, XPS, UV-Vis and AFM. Results show that Al2O3 doping induces the phase transition of Ti3O5 from a room-temperature stable β-phase to a high-temperature stable λ-phase, with complete transition at 5 at% doping. Al3+ with a smaller ionic radius causes lattice contraction and local distortion of Ti3O5, enabling stabilization at room temperature of the λ-phase. For TiO2 films, 12.5 at% doping is the optimal state with the stable composition transfer under this condition. With the increase in Al2O3 doping content, the refractive index and extinction coefficient of TiO2 films decrease continuously, while the optical band gap and surface roughness show an increasing trend. The changes in optical properties are mainly ascribed to the low refractive index of Al2O3, lattice compressive strain effect and oxygen vacancy passivation induced by Al3+. This study clarifies the regulation effect of Al2O3 doping on Ti3O5 phase transition and TiO2 film optical properties, and provides theoretical basis and experimental reference for the doping modification of TiO2 films and their practical applications in consumer electronics and optical filter devices. Full article
Show Figures

Figure 1

16 pages, 5056 KB  
Article
Depth-Profiling XPS Study of Oxygen Diffusion and Reduction During Low-Temperature Activation of Ti-Co-Ce Getter Films
by Siwei Tang, Yuhua Xiong and Huating Wu
Materials 2026, 19(7), 1379; https://doi.org/10.3390/ma19071379 - 31 Mar 2026
Cited by 1 | Viewed by 408
Abstract
In this study, Ti-Co-Ce getter films were deposited via magnetron sputtering to investigate their activation mechanism—the thermal removal of surface passivation layers to restore gas sorption capability. The morphology before and after film activation was characterized using scanning electron microscopy (SEM) and atomic [...] Read more.
In this study, Ti-Co-Ce getter films were deposited via magnetron sputtering to investigate their activation mechanism—the thermal removal of surface passivation layers to restore gas sorption capability. The morphology before and after film activation was characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The oxygen content on the film surface before and after activation was measured using an energy-dispersive X-ray spectrometer (EDS), and gas desorption during activation was monitored with a quadrupole mass spectrometer (QMS). The combined results confirmed the absence of O2 desorption during activation, suggesting oxygen migration into the film bulk. Crucially, in situ X-ray photoelectron spectroscopy (XPS) combined with controlled Ar+ ion sputtering depth profiling (0–30 nm) was employed to directly probe the chemical-state evolution within the thin film before and after thermal activation at 400 °C, thereby providing direct evidence of the activation dynamics. The data reveal that within the 0–10 nm near-surface region, a strong oxygen chemical potential gradient drives rapid oxide reduction and inward migration of lattice oxygen. At depths of 20–30 nm, moderate reduction coupled with oxygen enrichment induces phase separation, while around 30 nm, a dynamic equilibrium between oxygen inflow and outflow is established. These findings provide a theoretical basis for optimizing activation processes and guiding the development of low-temperature getter materials. This work is particularly relevant for MEMS, vacuum electronics, and other applications with stringent thermal budgets, expanding the design possibilities for heat-sensitive device integration. Full article
(This article belongs to the Section Thin Films and Interfaces)
Show Figures

Figure 1

17 pages, 2026 KB  
Article
High-Quality Perovskite Films Enabled by Solution-Processed Vacuum Evaporation for Flexible PIN-Type X-Ray Detectors
by Yali Wang, Hongjun Mo, Sai Huang, Haonan Li, Xinyang Huang and Weiguang Yang
Molecules 2026, 31(7), 1123; https://doi.org/10.3390/molecules31071123 - 29 Mar 2026
Viewed by 402
Abstract
Flexible X-ray detectors have emerged as a promising technology for portable medical imaging and wearable electronics, yet their manufacturing remains constrained by the competing requirements of device performance, mechanical conformability, and production scalability. Conventional solution-based deposition methods fail to yield high-quality perovskite thick [...] Read more.
Flexible X-ray detectors have emerged as a promising technology for portable medical imaging and wearable electronics, yet their manufacturing remains constrained by the competing requirements of device performance, mechanical conformability, and production scalability. Conventional solution-based deposition methods fail to yield high-quality perovskite thick films with uniform morphology, while vacuum evaporation techniques are limited by exorbitant operational costs and low throughput. Herein, we report an optimized solution-processed vacuum evaporation strategy that enables the fabrication of high-quality perovskite films (~1 μm thick) on flexible polyethylene naphthalate (PEN) substrates at a low processing temperature of 100 °C. By incorporating tailored additives into the precursor solution and precisely modulating the vapor-phase conversion kinetics, we achieved significant improvements in film density, crystallinity, and morphological uniformity. Systematic investigations were conducted to elucidate the structure–property relationships across three material systems: pure methylammonium lead iodide (MAPbI3), halogen-doped methylammonium lead iodide-bromide (MAPb(IBr)3), and synergistic cation-halogen engineered cesium-methylammonium lead iodide-bromide (CsMAPb(IBr)3). The optimized flexible PIN-type X-ray detector based on CsMAPb(IBr)3 exhibited exceptional performance metrics, including a dark current density as low as 5.2 nA cm−2 and an X-ray sensitivity of up to 1.43 × 104 μC·Gyair−1·cm−2. Remarkably, the device retained over 95% of its initial performance after 400 bending cycles with a bending radius of 6 mm, demonstrating outstanding mechanical robustness and operational durability. This work establishes a viable, cost-effective technical route for the scalable production of high-performance flexible X-ray detectors, addressing critical challenges in the advancement of next-generation portable imaging technologies. Full article
(This article belongs to the Special Issue Advances in Radiation Detection Materials and Technology)
Show Figures

Figure 1

19 pages, 1854 KB  
Review
Thermal Radiation Testing Methods at Cryogenic Temperatures: A Review
by Bixi Li and Fuzhi Shen
Cryo 2026, 2(1), 4; https://doi.org/10.3390/cryo2010004 - 17 Mar 2026
Viewed by 536
Abstract
As one of the three fundamental modes of heat transfer, thermal radiation has long attracted interest due to its independence from a medium and its strong temperature dependence. In extreme environments such as deep space exploration and cryogenic engineering, thermal radiation often becomes [...] Read more.
As one of the three fundamental modes of heat transfer, thermal radiation has long attracted interest due to its independence from a medium and its strong temperature dependence. In extreme environments such as deep space exploration and cryogenic engineering, thermal radiation often becomes the dominant heat transfer mechanism. Consequently, the radiative properties of materials are crucial for achieving precise thermal control, directly influencing the thermal stability and overall performance of advanced systems, including space probes, cryogenic devices, and superconducting components operating under high-vacuum and low-temperature conditions. This paper provides a systematic review of the physical mechanisms, key factors affecting emissivity, major measurement methods, and technological developments related to material radiative properties at cryogenic temperatures. Particular attention is given to experimental methods and techniques describing material radiative behavior, along with a comparative analysis of the suitability of different measurement techniques for cryogenic applications. Finally, the study highlights the significant practical value of this research for fields such as aerospace, precision electronics, and cryogenic instrumentation, aiming to offer insights for optimizing cryogenic thermal management and guiding the design of novel functional materials. Full article
Show Figures

Figure 1

18 pages, 1482 KB  
Perspective
Perovskite Solar Cells for Space Applications: Progress, Perspectives, and Remaining Challenges
by Vera C. M. Duarte, Luís F. Santos and Luísa Andrade
Energies 2026, 19(6), 1432; https://doi.org/10.3390/en19061432 - 12 Mar 2026
Viewed by 1331
Abstract
Perovskite solar cells (PSCs) have rapidly evolved into one of the most promising photovoltaic technologies, achieving power conversion efficiencies comparable to established silicon devices while offering unique advantages such as low weight, mechanical flexibility, and low-temperature, solution-based manufacturing. These attributes, combined with recently [...] Read more.
Perovskite solar cells (PSCs) have rapidly evolved into one of the most promising photovoltaic technologies, achieving power conversion efficiencies comparable to established silicon devices while offering unique advantages such as low weight, mechanical flexibility, and low-temperature, solution-based manufacturing. These attributes, combined with recently demonstrated tolerance to high-energy particle irradiation, position PSCs as compelling candidates for next-generation space power systems. This perspective work summarizes recent advances in PSC development for space environments, focusing on their behaviour under key stressors such as radiation (e.g., electrons, protons, gamma rays, and neutrons), ultraviolet exposure, extreme thermal cycling, and ultra-high vacuum. Progress in material design, device architecture, self-healing mechanisms, and encapsulation strategies is discussed, along with early in-orbit and suborbital demonstrations. Remaining challenges, including long-term stability, encapsulation reliability, large-area scalability, and the need for standardized space-qualification protocols, are also outlined. Indeed, PSCs represent a compelling opportunity for next-generation space photovoltaics, provided that targeted materials and engineering solutions address critical issues of encapsulation and durability under combined stressors to ensure reliable operation in harsh extraterrestrial conditions. Full article
(This article belongs to the Section A2: Solar Energy and Photovoltaic Systems)
Show Figures

Figure 1

9 pages, 1156 KB  
Article
Research on Sheet Electron Beam Quadrupole Permanent Magnet Focusing System for Terahertz Vacuum Devices
by Siming Su, Kangcheng Zhou, Yingzhou Liu, Pan Pan and Jinjun Feng
Electronics 2026, 15(6), 1174; https://doi.org/10.3390/electronics15061174 - 11 Mar 2026
Viewed by 317
Abstract
Practical development of terahertz technology requires higher power radiation sources. The sheet electron beam vacuum device is an effective solution of increasing the output power of terahertz radiation sources, but faces the difficulty of stable transmission of the beam. In this paper, a [...] Read more.
Practical development of terahertz technology requires higher power radiation sources. The sheet electron beam vacuum device is an effective solution of increasing the output power of terahertz radiation sources, but faces the difficulty of stable transmission of the beam. In this paper, a compact quadrupole permanent magnet (QPM) focusing system for terahertz sheet beam devices is designed, and a practical focusing system is constructed into a prototype for beam transmission verification. In the experiment, 16 pieces of high-performance NdFeB permanent magnets were adopted with a total weight of about 10 kg. The magnetic field test of the system was carried out and the results show that the system can provide a uniform high-intensity magnetic field of over 0.95 T within an axial length of 20 mm. With the tested QPM magnetic field configuration, PIC simulation of the sheet beam transmission was implemented, indicating that a sheet electron beam with a 20 kV voltage and 15 mA current can travel through a beam tunnel of a cross-section 0.1 mm × 0.05 mm, with a transmission ratio of 98.5%. Full article
(This article belongs to the Section Microelectronics)
Show Figures

Figure 1

14 pages, 2689 KB  
Article
Construction of Atomically Thin Boron Films on Si Heterojunctions Using a First Principles Approach
by Piet Xiaowen Fang, Stoyan Nihtianov and Changming Fang
Materials 2026, 19(5), 952; https://doi.org/10.3390/ma19050952 - 28 Feb 2026
Viewed by 354
Abstract
Deposition of amorphous boron (a-B) onto Si substrates via chemical decomposition of B2H6 molecules produces a-B/Si, heterojunctions which are the core parts of photodetectors used in vacuum ultraviolet (VUV) and potentially in extreme ultraviolet (EUV) lithography. However, fundamental questions regarding [...] Read more.
Deposition of amorphous boron (a-B) onto Si substrates via chemical decomposition of B2H6 molecules produces a-B/Si, heterojunctions which are the core parts of photodetectors used in vacuum ultraviolet (VUV) and potentially in extreme ultraviolet (EUV) lithography. However, fundamental questions regarding the limit on the thickness of the deposited a-B thin films and the intrinsic electronic nature of the B atoms adjacent to the Si substrate remain unanswered. Here we investigated the local structural and electronic properties of atomic-thin a-B layers at the Si{001} substrates using ab initio molecular dynamics (AIMD) techniques. The investigation revealed a rich variety of local chemical bonding and consequently interfacial electronic properties. For thin a-B layer(s)/Si systems, most of the a-B atoms at the interface formed (-B-Si-B-Si-) chains on the Si{001} surface. These B atoms were found to occupy the positions of the missing Si atoms and were bonded to the surficial Si atoms. The surficial Si atoms predominantly have two B neighbors. Localized defect states at the Fermi level for the interfacial Si and B atoms were found in the pseudo-gap. These states have a major influence on the electrical properties of the device. The predicted minimum thickness of the a-B films is about 1 to 2 nm, a useful metric for the manufacturing of a-B/Si devices. The information obtained here further helps us to understand the working mechanisms of a-B/Si interfaces for photon detection and constructing new core devices for potential applications in the field of metal/semiconductor heterojunctions for photon detection, photovoltaics, Schottky diodes and semiconductor devices. Full article
(This article belongs to the Section Thin Films and Interfaces)
Show Figures

Graphical abstract

13 pages, 7651 KB  
Article
Filtered Cathodic Vacuum Arc Deposition for Inkjet-Printed OLED Encapsulation
by Zhuo Gao, Songju Li, Lei Wang, Lin Chen, Xianwen Sun and Dong Fu
Materials 2026, 19(3), 638; https://doi.org/10.3390/ma19030638 - 6 Feb 2026
Viewed by 561
Abstract
To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al2O3 films. The FCVA-Al2O3 process achieved a deposition rate of 15 nm/min, which [...] Read more.
To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al2O3 films. The FCVA-Al2O3 process achieved a deposition rate of 15 nm/min, which is approximately an order of magnitude higher than that of conventional ALD. This process does not involve hydrogen, preventing hydrogen ion penetration and thereby ensuring the high stability of the oxide TFT backplane. FCVA-Al2O3 films were integrated with inkjet-printed (IJP) organic layers to form a hybrid thin-film encapsulation (TFE) structure for OLEDs. The resulting laminated encapsulation exhibited excellent water vapor barrier properties (WVTR, Water Vapor Transmission Rate of 1.2 × 10−4 g/m2/day), demonstrating the great potential of FCVA for packaging high-throughput and high-performance flexible electronics. In addition to evaluating barrier properties (surface roughness, residual stress, and WVTR) to assess the suitability of TFE, the impact of FCVA technology was assessed via oxide thin-film transistor (TFT) electrical performance and OLED device reliability tests. The electrical properties of oxide TFTs show no significant degradation post-encapsulation, while OLED performance, despite a slight increase in current efficiency, remains effectively unchanged. Additionally, the lifetime of OLED devices reached 300 h under accelerated aging conditions (85 °C, 85% relative humidity), which is nearly twice that of devices without FCVA-Al2O3 encapsulation. Full article
Show Figures

Graphical abstract

11 pages, 4531 KB  
Article
Enhanced Flexible Vacuum-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets via Al Nanoparticles
by Youwei Chen, Jiaxing Li, Qiang Li, Wannian Fang, Haifeng Liu, Ziyan Lin, Tao Wang and Feng Yun
Nanomaterials 2026, 16(3), 187; https://doi.org/10.3390/nano16030187 - 30 Jan 2026
Cited by 1 | Viewed by 627
Abstract
This work reports an enhanced flexible vacuum-ultraviolet (VUV) photodetector on a polyimide (PI) substrate based on hexagonal boron nitride nanosheets (BNNSs) with Al nanoparticles (Al NPs). The BNNS film were prepared via liquid-phase exfoliation combined with a self-assembly process, and size-controllable Al NPs [...] Read more.
This work reports an enhanced flexible vacuum-ultraviolet (VUV) photodetector on a polyimide (PI) substrate based on hexagonal boron nitride nanosheets (BNNSs) with Al nanoparticles (Al NPs). The BNNS film were prepared via liquid-phase exfoliation combined with a self-assembly process, and size-controllable Al NPs were constructed on the BNNS’s surface by electron-beam evaporation followed by thermal annealing. When the Al film thickness was 15 nm, the annealed Al NPs exhibited a pronounced enhancement of photoelectric effects at a wavelength of 185 nm. Combined with finite-difference time-domain (FDTD) simulations, it was confirmed that the localized surface plasmon resonance (LSPR) generated by Al NPs significantly enhanced the local electromagnetic field and effectively coupled into the interior of BNNSs. These exhibited a strong plasmon-enhanced absorption effect and thereby improved light absorption and carrier generation efficiency. The flexible photodetector based on this structure showed an increase in the photo-to-dark current ratio from 110.17 to 527.79 under a bias voltage of 20 V, while maintaining fast response and recovery times of 79.79 ms and 82.38 ms, respectively. In addition, the device demonstrated good stability under multiple bending angles and cyclic bending conditions, highlighting its potential applications in flexible solar-blind VUV photo ultraviolet. Full article
Show Figures

Figure 1

26 pages, 3452 KB  
Review
The Quest for Low Work Function Materials: Advances, Challenges, and Opportunities
by Alessandro Bellucci
Crystals 2026, 16(1), 47; https://doi.org/10.3390/cryst16010047 - 9 Jan 2026
Cited by 1 | Viewed by 1391
Abstract
Low work function (LWF) materials are essential for enabling efficient systems’ behavior in applications ranging from vacuum electronics to energy conversion devices and next-generation opto-electronic interfaces. Recent advances in theory, characterization, and materials engineering have dramatically expanded the candidates for LWF systems, including [...] Read more.
Low work function (LWF) materials are essential for enabling efficient systems’ behavior in applications ranging from vacuum electronics to energy conversion devices and next-generation opto-electronic interfaces. Recent advances in theory, characterization, and materials engineering have dramatically expanded the candidates for LWF systems, including alkali-based compounds, perovskites, borides, nitrides, barium and scandium oxides, 2D materials, MXenes, functional polymers, carbon materials, and hybrid architectures. This review provides a comprehensive overview of the fundamental mechanisms governing the work function (WF) and discusses the state-of-the-art measurement techniques, as well as the most used computational approaches for predicting and validating WF values. The recent breakthroughs in engineering LWF surfaces through different methods are discussed. Special emphasis is placed on the relationship between predicted and experimentally measured WF values, highlighting the role of surface contamination, reconstruction, and environmental stability. Performance, advantages, and limitations of major LWF material families are fully analyzed, identifying emerging opportunities for next applications. Finally, current and fundamental challenges in achieving scalable, stable, and reproducible LWF surfaces are considered, presenting promising research directions such as high-throughput computational discovery and in situ surface engineering with protective coatings. This review aims to provide a unified framework for understanding, achieving, and advancing LWF materials toward practical and industrially relevant technologies. Full article
(This article belongs to the Section Crystal Engineering)
Show Figures

Figure 1

22 pages, 16177 KB  
Article
Enhanced Performance of an Electrochemical Sensor Using CNT Membrane for Accumulation-Based Detection of Nanoparticles
by Azam Usefian Babukani, Maziar Jafari, Paul-Vahe Cicek and Ricardo Izquierdo
Chemosensors 2026, 14(1), 12; https://doi.org/10.3390/chemosensors14010012 - 2 Jan 2026
Viewed by 803
Abstract
A carbon nanotube (CNT)-integrated microfluidic electrochemical sensor was developed for sensitive nanoparticle detection using gold nanoparticles (AuNPs) as the model analyte. The device incorporated screen-printed polyethylene terephthalate (PET) electrodes, a polydimethylsiloxane (PDMS) microchannel, and a CNT membrane that simultaneously served as a filtration [...] Read more.
A carbon nanotube (CNT)-integrated microfluidic electrochemical sensor was developed for sensitive nanoparticle detection using gold nanoparticles (AuNPs) as the model analyte. The device incorporated screen-printed polyethylene terephthalate (PET) electrodes, a polydimethylsiloxane (PDMS) microchannel, and a CNT membrane that simultaneously served as a filtration layer and working electrode. This configuration enhanced analyte trapping, increased the electroactive surface area, and accelerated electron transfer under convective flow. The CNT membrane was fabricated by vacuum filtration and torch-assisted bonding, ensuring strong adhesion without adhesives or plasma treatment. Electrochemical analysis showed that the filter-integrated CNT sensor exhibited an oxidation current of 63 µA compared to 11 µA for the non-filter sensor, representing a fifteen-fold sensitivity enhancement. The detection limit improved from 1.0 × 10−3 to 7.5 × 10−4 mol·L−1 with excellent reproducibility (RSD < 5%) and ∼90% accuracy. These findings validated the filtration-assisted accumulation mechanism and demonstrated the effectiveness of CNT-integrated microfluidic sensors for enhanced nanoparticle detection, while highlighting their potential for future adaptation to biosensing applications. Full article
(This article belongs to the Special Issue Emerging 2D Materials for Sensing Applications)
Show Figures

Figure 1

30 pages, 21552 KB  
Article
Broadband S-Band Stripline Circulators: Design, Fabrication, and High-Power Characterization
by Aslihan Caglar, Hamid Torpi and Umit Kaya
Micromachines 2026, 17(1), 63; https://doi.org/10.3390/mi17010063 - 31 Dec 2025
Viewed by 576
Abstract
A stripline-type circulator is essential for the initial low-power characterization of vacuum electron devices such as magnetrons, enabling accurate measurements of startup behavior, oscillation frequency, and mode structure while minimizing reflections and protecting diagnostic equipment. In this study, two broadband S-band stripline circulator [...] Read more.
A stripline-type circulator is essential for the initial low-power characterization of vacuum electron devices such as magnetrons, enabling accurate measurements of startup behavior, oscillation frequency, and mode structure while minimizing reflections and protecting diagnostic equipment. In this study, two broadband S-band stripline circulator prototypes operating in the 2–4 GHz and 3–4 GHz bands were designed, fabricated, and experimentally characterized. A unified design methodology was implemented by using the same ferrite material and coupling angle in both structures, providing procurement simplicity, cost reduction, and technological standardization. This approach also enabled a direct assessment of how bandwidth variations influence circulator behavior. The design goals targeted a transmission efficiency above 90%, isolation exceeding 15 dB, and a voltage standing-wave ratio (VSWR) of 1.2:1. Experimental evaluations, including magnetic field mapping, low-power S-parameter measurements, and high-power tests, confirmed that both prototypes satisfy these specifications, consistently achieving at least 90% transmission across their respective operating bands. Additionally, a comparative analysis between a locally fabricated ferrite and a commercial ferrite sample was conducted, revealing the influence of material properties on transmission stability and high-power behavior. The results demonstrate that broadband stripline circulators employing a common ferrite material can be adapted to different S-band applications, offering a practical, cost-effective, and reliable solution for RF systems. Full article
(This article belongs to the Section E:Engineering and Technology)
Show Figures

Figure 1

Back to TopTop