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Nanomaterials
Special Issues
Microstructure Semiconductor Materials and Optoelectronic Applications
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Microstructure Semiconductor Materials and Optoelectronic Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 16 January 2026 | Viewed by 4320

Special Issue Editors

Dr. Xiaoyan Liu

E-Mail Website
Guest Editor
College of Integrated Circuit Science and Engineering, and National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: GaN; micro-LED; full color display; visble light communication; memristor; synapses
Special Issues, Collections and Topics in MDPI journals
Dr. Zhou Wang

E-Mail Website
Guest Editor
College of Integrated Circuit Science and Engineering, and National and Local Joint Engineering Laboratory for RF Integration and Micro-Packaging Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: GaN; micro-LED; full color display; quantum dot color conversion; heterogeneous integration

Special Issue Information

Dear Colleagues,

Microstructure semiconductor materials are materials with an artificially designed functional structure, a micro and/or nano size, and arranged in a specific way (such as two/one/zero-dimensional materials, single/multi-quantum well structure, superlattice structure, core/shell structure, and so on), which are actively studied in many fields of optoelectronic devices, including next-generation display, wireless optical communication, sensors, photodetector, memristor, simulated synapses, and more. These materials are endowed with excellent optical and electrical properties through the design of microstructure, which is expected to provide new possibilities for the future photoelectric technology revolution.

We are pleased to invite you to submit your original research articles, review articles, and short communications in the scope of this issue. The scope of this issue ranges from the synthesis of original semiconductor materials, the innovation of optoelectronic devices design, the advanced applications and the exploration of physical properties. The submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). Manuscripts can be submitted any time before the deadline. All submissions that pass pre-check are reviewed through a single-blind peer-review process. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the Special Issue website.

This Special Issue aims to focus on the science and engineering aspects of microstructure semiconductor materials, which have fundamental properties, micro/nano process design, and energy band variations that enable the observation of unprecedented physical phenomena and enable state-of-the-art electronic devices.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Microstructure semiconductor materials and devices;
  • Microstructure design and manufacture;
  • Performance optimization and improvement of materials and devices;
  • Optoelectronic devices mainly including micro/nano-LED, organic LED(OLED), QLED (quantum dot LED), lasers, superluminance diode, vertical-cavity surface-emitting lasers (VCSELs), detectors, solar cell, optoelectronic memristors, optoelectronic synapse devices, and so on;
  • Optoelectronic technology and applications.

We look forward to receiving your contributions.

Dr. Xiaoyan Liu
Dr. Zhou Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • GaN quantum well
  • two-dimensional material
  • perovskite quantum dots
  • metal oxide
  • optoelectronic devices
  • micro-LED
  • memristor
  • simulated synapses
  • full color display
  • visible light communication

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (4 papers)

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Research

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13 pages, 3256 KB  
Article
Characteristics of GaN-Based Micro-Light-Emitting Diodes for Mbps Medium-Long Distance Underwater Visible Light Communication
by Zhou Wang, Yijing Lin, Yuhang Dai, Jiakui Fan, Weihong Sun, Junyuan Chen, Siqi Yang, Shiting Dou, Haoxiang Zhu, Yan Gu, Jin Wang, Hao Zhang, Qiang Chen and Xiaoyan Liu
Nanomaterials 2025, 15(17), 1347; https://doi.org/10.3390/nano15171347 - 2 Sep 2025
Viewed by 827
Abstract
To promote the development of long-distance high-speed underwater optical wireless communication (UWOC) based on visible light, this study proposes a high-bandwidth UWOC system based on micro-light-emitting-diodes (micro-LEDs) adopting the Non-Return-to-Zero On-Off Keying (NRZ-OOK) modulation. The numerical simulations reveal that optimizing the structural parameters [...] Read more.
To promote the development of long-distance high-speed underwater optical wireless communication (UWOC) based on visible light, this study proposes a high-bandwidth UWOC system based on micro-light-emitting-diodes (micro-LEDs) adopting the Non-Return-to-Zero On-Off Keying (NRZ-OOK) modulation. The numerical simulations reveal that optimizing the structural parameters of gallium nitride (GaN)-based micro-LED through dimensional scaling and quantum well layer reduction may significantly enhance optoelectronic performance, including modulation bandwidth and luminous efficiency. Moreover, experimental validation demonstrated maximum real-time data rates of 420 Mbps, 290 Mbps, and 250 Mbps at underwater distances of 2.3 m, 6.9 m, and 11.5 m, respectively. Furthermore, the underwater audio communication was successfully implemented at an 11.5 m UWOC distance at an ultra-low level of incoming optical power (12.5 µW) at the photodetector (PD) site. The channel characterization yielded a micro-LED-specific attenuation coefficient of 0.56 dB/m, while parametric analysis revealed wavelength-dependent degradation patterns, exhibiting positive correlations between both attenuation coefficient and bit error rate (BER) with operational wavelength. This study provides valuable insights for optimizing underwater optical systems to enhance real-time environmental monitoring capabilities and strengthen security protocols for subaquatic military communications in the future. Full article
(This article belongs to the Special Issue Microstructure Semiconductor Materials and Optoelectronic Applications)
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10 pages, 1697 KB  
Article
Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors
by Mingu Kang, Kyoungah Cho and Sangsig Kim
Nanomaterials 2025, 15(12), 880; https://doi.org/10.3390/nano15120880 - 7 Jun 2025
Viewed by 755
Abstract
In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium–tin–gallium–zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses with rising and falling times (tr-f) of 400 ns, [...] Read more.
In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium–tin–gallium–zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses with rising and falling times (tr-f) of 400 ns, 200 ns, and 100 ns were applied to the a-ITGZO TFTs, the threshold voltage (VTH) shifted positively by 0.97 V, 2.68 V, and 2.83 V, respectively. These experimental results align with a stretched exponential model, which attributes the VTH to electron trapping in bulk dielectric states or at interface traps. The simulation results further validate the stretched exponential model by illustrating the potential distribution across the dielectric and channel layers as a function of tr-f and the density of states in the a-ITGZO TFT. Full article
(This article belongs to the Special Issue Microstructure Semiconductor Materials and Optoelectronic Applications)
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Graphical abstract

11 pages, 3660 KB  
Article
Plasmonic-Enhanced Infrared Absorption Platform for Broadband and Multiple Molecular Fingerprint Retrieval
by Yulong Hu, Zexing Zheng, Huishan Ma, Shuguang Zhu, Yiming Yu, Jie Hong, Weiwei Tang, Jiale He, Libo Zhang, Changlong Liu, Guanhai Li and Xiaoshuang Chen
Nanomaterials 2025, 15(4), 284; https://doi.org/10.3390/nano15040284 - 13 Feb 2025
Viewed by 1076
Abstract
The mid-infrared (mid-IR) region, often referred to as the molecular fingerprint region, encompasses the distinctive absorption spectra characteristic of numerous important molecules. However, the intrinsically small molecular absorption cross-sections, combined with the size mismatch between nanoscale molecules and microscale mid-IR wavelengths, result in [...] Read more.
The mid-infrared (mid-IR) region, often referred to as the molecular fingerprint region, encompasses the distinctive absorption spectra characteristic of numerous important molecules. However, the intrinsically small molecular absorption cross-sections, combined with the size mismatch between nanoscale molecules and microscale mid-IR wavelengths, result in inherently weak light-molecule interactions. In this work, we propose a broadband, tunable platform based on plasmonic-enhanced infrared absorption for label-free retrieval of molecular fingerprints. By leveraging the strong near-field enhancement of the plasmonic structure, the platform significantly amplifies light-molecule interactions, enabling precise reconstruction of the fingerprint absorption spectra of target molecules. In addition, the proposed structure exhibits exceptional molecular detection capabilities across the wavelength range of 5–10 μm, with remarkable potential for distinguishing molecular mixture components. The results pave the way for the applications in chemical identification, biomedical diagnostics, environmental monitoring, and other interdisciplinary fields, which require miniaturized and high-precision sensing. Full article
(This article belongs to the Special Issue Microstructure Semiconductor Materials and Optoelectronic Applications)
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Review

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29 pages, 14379 KB  
Review
Interface Thermal Resistance in Heterostructures of Micro–Nano Power Devices: Current Status and Future Challenges
by Yinjie Shen, Jia Fu, Fengguo Han, Dongbo Li, Bing Yang and Yunqing Tang
Nanomaterials 2025, 15(16), 1236; https://doi.org/10.3390/nano15161236 - 13 Aug 2025
Viewed by 1027
Abstract
As micro–nano power devices have evolved towards high frequency, high voltage, and a high level of integration, the issue of thermal resistance at heterointerfaces has become increasingly prominent, posing a key bottleneck that limits device performance and reliability. This paper presents a systematic [...] Read more.
As micro–nano power devices have evolved towards high frequency, high voltage, and a high level of integration, the issue of thermal resistance at heterointerfaces has become increasingly prominent, posing a key bottleneck that limits device performance and reliability. This paper presents a systematic review of the current state of research and future challenges related to interface thermal resistance in heterostructures within micro and nano power devices. First, based on phonon transport theory, we conducted an in-depth analysis of the heat transfer mechanisms at typical heterointerfaces, such as metal–semiconductor and semiconductor–semiconductor, and novel low-dimensional materials. Secondly, a comprehensive review of current interface thermal resistance characterization techniques is provided, including the application and limitations of advanced methods such as time domain thermal reflection and Raman thermal measurement in micro- and nano-scale thermal characterization. Finally, in response to the application requirements of semiconductor power devices, future research directions such as atomic-level interface engineering, machine learning-assisted material design, and multi-physics field collaborative optimization are proposed to provide new insights for overcoming the thermal management bottlenecks of micro–nano power devices. Full article
(This article belongs to the Special Issue Microstructure Semiconductor Materials and Optoelectronic Applications)
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