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Advances in Photoelectric Materials: Preparation, Characterization, Properties, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 October 2025 | Viewed by 558

Special Issue Editors


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Guest Editor
Institute of Physics—Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; energy harvesting; impedance spectroscopy; nanomaterials; supercapacitors
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Institute of Physics—Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; nanomaterials; semiconductors; optical spectroscopy; spectrogoniometry; optical parameters
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The field of photoelectric materials has witnessed tremendous progress in recent years, revolutionizing various technologies and applications, ranging from renewable energy to information storage and sensing platforms.

This Special Issue seeks to showcase the latest advancements in photoelectric materials, highlighting innovative strategies employed in material synthesis, functionalization, and characterization. Contributions addressing the fundamental properties of photoelectric materials, especially optical, electrical, and structural properties, are particularly encouraged. Furthermore, studies on novel materials and their potential utilization in areas including photovoltaics, photoelectrochemical devices, optical sensing, and optoelectronics are also welcomed.

Dr. Anna Starczewska
Dr. Mirosława Kȩpińska
Guest Editors

Manuscript Submission Information

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Keywords

  • photoelectric materials
  • optoelectronics
  • photodetectors
  • light sources
  • optical sensors
  • solar cells

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Published Papers (1 paper)

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Research

16 pages, 3307 KiB  
Article
Synaptic Plasticity and Memory Retention in ZnO–CNT Nanocomposite Optoelectronic Synaptic Devices
by Seung Hun Lee, Dabin Jeon and Sung-Nam Lee
Materials 2025, 18(10), 2293; https://doi.org/10.3390/ma18102293 - 15 May 2025
Cited by 1 | Viewed by 456
Abstract
This study presents the fabrication and characterization of ZnO–CNT composite-based optoelectronic synaptic devices via a sol–gel process. By incorporating various concentrations of CNTs (0–2.0 wt%) into ZnO thin films, we investigated their effects on synaptic behaviors under ultraviolet (UV) stimulation. The CNT addition [...] Read more.
This study presents the fabrication and characterization of ZnO–CNT composite-based optoelectronic synaptic devices via a sol–gel process. By incorporating various concentrations of CNTs (0–2.0 wt%) into ZnO thin films, we investigated their effects on synaptic behaviors under ultraviolet (UV) stimulation. The CNT addition enhanced the electrical and optical performance by forming a p–n heterojunction with ZnO, which promoted charge separation and suppressed recombination. As a result, the 1.5 wt% CNT device exhibited the highest excitatory postsynaptic current (EPSC), improved paired-pulse facilitation, and prolonged memory retention. Learning–forgetting cycles revealed that repeated stimulation reduced the number of pulses required for relearning while extending the forgetting time, mimicking biological memory reinforcement. Energy consumption per pulse was estimated at 16.34 nJ, suggesting potential for low-power neuromorphic applications. A 3 × 3 device array was also employed for visual memory simulation, showing spatially controllable and stable memory states depending on CNT content. To support these findings, structural and optical analyses were conducted using scanning electron microscopy (SEM), UV-visible absorption spectroscopy, photoluminescence (PL) spectroscopy, and Raman spectroscopy. These findings demonstrate that the synaptic characteristics of ZnO-based devices can be finely tuned through CNT incorporation, providing a promising pathway for the development of energy-efficient and adaptive optoelectronic neuromorphic systems. Full article
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