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Advances in Photoelectric Materials: Preparation, Characterization, Properties, and Applications
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Advances in Photoelectric Materials: Preparation, Characterization, Properties, and Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 May 2026 | Viewed by 2228

Special Issue Editors

Dr. Anna Starczewska

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Guest Editor
Institute of Physics—Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; energy harvesting; impedance spectroscopy; nanomaterials; supercapacitors
Special Issues, Collections and Topics in MDPI journals
Dr. Mirosława Kȩpińska

E-Mail Website
Guest Editor
Institute of Physics—Centre for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Interests: photonic crystals; nanomaterials; semiconductors; optical spectroscopy; spectrogoniometry; optical parameters
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The field of photoelectric materials has witnessed tremendous progress in recent years, revolutionizing various technologies and applications, ranging from renewable energy to information storage and sensing platforms.

This Special Issue seeks to showcase the latest advancements in photoelectric materials, highlighting innovative strategies employed in material synthesis, functionalization, and characterization. Contributions addressing the fundamental properties of photoelectric materials, especially optical, electrical, and structural properties, are particularly encouraged. Furthermore, studies on novel materials and their potential utilization in areas including photovoltaics, photoelectrochemical devices, optical sensing, and optoelectronics are also welcomed.

Dr. Anna Starczewska
Dr. Mirosława Kȩpińska
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photoelectric materials
  • optoelectronics
  • photodetectors
  • light sources
  • optical sensors
  • solar cells

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Published Papers (2 papers)

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Research

13 pages, 7651 KB  
Article
Filtered Cathodic Vacuum Arc Deposition for Inkjet-Printed OLED Encapsulation
by Zhuo Gao, Songju Li, Lei Wang, Lin Chen, Xianwen Sun and Dong Fu
Materials 2026, 19(3), 638; https://doi.org/10.3390/ma19030638 - 6 Feb 2026
Viewed by 499
Abstract
To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al2O3 films. The FCVA-Al2O3 process achieved a deposition rate of 15 nm/min, which [...] Read more.
To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al2O3 films. The FCVA-Al2O3 process achieved a deposition rate of 15 nm/min, which is approximately an order of magnitude higher than that of conventional ALD. This process does not involve hydrogen, preventing hydrogen ion penetration and thereby ensuring the high stability of the oxide TFT backplane. FCVA-Al2O3 films were integrated with inkjet-printed (IJP) organic layers to form a hybrid thin-film encapsulation (TFE) structure for OLEDs. The resulting laminated encapsulation exhibited excellent water vapor barrier properties (WVTR, Water Vapor Transmission Rate of 1.2 × 10−4 g/m2/day), demonstrating the great potential of FCVA for packaging high-throughput and high-performance flexible electronics. In addition to evaluating barrier properties (surface roughness, residual stress, and WVTR) to assess the suitability of TFE, the impact of FCVA technology was assessed via oxide thin-film transistor (TFT) electrical performance and OLED device reliability tests. The electrical properties of oxide TFTs show no significant degradation post-encapsulation, while OLED performance, despite a slight increase in current efficiency, remains effectively unchanged. Additionally, the lifetime of OLED devices reached 300 h under accelerated aging conditions (85 °C, 85% relative humidity), which is nearly twice that of devices without FCVA-Al2O3 encapsulation. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Characterization, Properties, and Applications)
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16 pages, 3307 KB  
Article
Synaptic Plasticity and Memory Retention in ZnO–CNT Nanocomposite Optoelectronic Synaptic Devices
by Seung Hun Lee, Dabin Jeon and Sung-Nam Lee
Materials 2025, 18(10), 2293; https://doi.org/10.3390/ma18102293 - 15 May 2025
Cited by 11 | Viewed by 1379
Abstract
This study presents the fabrication and characterization of ZnO–CNT composite-based optoelectronic synaptic devices via a sol–gel process. By incorporating various concentrations of CNTs (0–2.0 wt%) into ZnO thin films, we investigated their effects on synaptic behaviors under ultraviolet (UV) stimulation. The CNT addition [...] Read more.
This study presents the fabrication and characterization of ZnO–CNT composite-based optoelectronic synaptic devices via a sol–gel process. By incorporating various concentrations of CNTs (0–2.0 wt%) into ZnO thin films, we investigated their effects on synaptic behaviors under ultraviolet (UV) stimulation. The CNT addition enhanced the electrical and optical performance by forming a p–n heterojunction with ZnO, which promoted charge separation and suppressed recombination. As a result, the 1.5 wt% CNT device exhibited the highest excitatory postsynaptic current (EPSC), improved paired-pulse facilitation, and prolonged memory retention. Learning–forgetting cycles revealed that repeated stimulation reduced the number of pulses required for relearning while extending the forgetting time, mimicking biological memory reinforcement. Energy consumption per pulse was estimated at 16.34 nJ, suggesting potential for low-power neuromorphic applications. A 3 × 3 device array was also employed for visual memory simulation, showing spatially controllable and stable memory states depending on CNT content. To support these findings, structural and optical analyses were conducted using scanning electron microscopy (SEM), UV-visible absorption spectroscopy, photoluminescence (PL) spectroscopy, and Raman spectroscopy. These findings demonstrate that the synaptic characteristics of ZnO-based devices can be finely tuned through CNT incorporation, providing a promising pathway for the development of energy-efficient and adaptive optoelectronic neuromorphic systems. Full article
(This article belongs to the Special Issue Advances in Photoelectric Materials: Preparation, Characterization, Properties, and Applications)
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