Search Results (723)

The switching characteristics of GaN HEMT devices exhibit a very complex dynamic nonlinear behavior and multi-physics coupling characteristics, and traditional switching current models based on physical mechanisms have significant limitations. This article adopts a hybrid architecture of convolutional neural network and long short-term memory network (CNN-LSTM). In the 1D-CNN layer, the one-dimensional convolutional neural network can automatically learn and extract local transient features of time series data by sliding convolution operations on time series data through its convolution kernel, making these local transient features present a specific form in the local time window. In the double-layer LSTM layer, the neural network model captures the transient characteristics of switch current through the gating mechanism and state transfer. The hybrid architecture of the constructed model has significant advantages in accuracy, with metrics such as root mean square error (RMSE) and mean absolute error (MAE) significantly reduced, compared to traditional switch current models, solving the problem of insufficient accuracy in traditional models. The neural network model has good fitting performance at both room and high temperatures, with an average coefficient close to 1. The new neural network hybrid architecture has short running time and low computational resource consumption, meeting the needs of practical applications. Full article

The junction temperature (T_j) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensitivity of switching characteristics makes it difficult for traditional single temperature-sensitive electrical parameters (TSEPs) to achieve accurate estimation. To address this challenge and enable practical thermal sensing applications, this study proposes an accurate, application-oriented T_j estimation method based on multivariate linear regression (MLR) using turn-off current fall time (t_fi) and fall loss (E_fi) as complementary TSEPs. First, the feasibility of using current fall time and current fall energy loss as TSEPs is demonstrated. Then, a coupled junction temperature prediction model is developed based on multivariate linear regression using t_fi and E_fi. The proposed method is experimentally validated through comparative analysis. Experimental results demonstrate that the proposed method achieves high prediction accuracy, highlighting its effectiveness and superiority in MLR approach based on the current fall phase characteristics of SiC MOSFETs. This method offers promising prospects for enhancing the condition monitoring, reliability assessment, and intelligent sensing capabilities of power electronics systems. Full article

In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 V_pp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article

The design and adjustable properties of nanoporous materials are important for current and future technological applications, research, and development. In addition, nanoporous ferroelectric materials have the potential to achieve competitive ferroelectric, dielectric, and piezoelectric characteristics. In this work, using the phase-field model, we found that the shape of pores in barium titanite ceramics governs the formation of the ferroelectric domain structure and the switching hysteresis loop. A remanent polarization-coercive field (P_r-E_c) diagram is introduced to denote the shape of the hysteresis loops. We performed a fundamental study in understanding how the domain structures affect the properties of domain-engineered porous ferroelectrics. Simulation results show that the hysteresis loop of porous ferroelectrics can be designed by controlling the shape/orientation of the ellipse-shaped pores. Numerical simulations also verify that the dielectric/piezoelectric properties can be improved with artificially designed porous structures. These phase-field results may be useful in the development of highly performing lead-free ferroelectric/piezoelectric materials. Full article

Memristors with resistive switching capabilities are vital for information storage and brain-inspired computing, making them a key focus in current research. This study demonstrates non-volatile analog resistive switching behavior in Al/TiO_x/TiN/Si(n⁺⁺)/Al memristive devices. Analog resistive switching offers gradual, controllable conductance changes, which are essential for mimicking brain-like synaptic behavior, unlike digital/abrupt switching. The amorphous titanium oxide (TiO_x) active layer was deposited using the pulsed-DC reactive magnetron sputtering technique. The impact of increasing the oxide thickness on the electrical performance of the memristors was investigated. Electrical characterizations revealed stable, forming-free analog resistive switching, achieving endurance beyond 300 DC cycles. The charge conduction mechanisms underlying the current–voltage (I–V) characteristics are analyzed in detail, revealing the presence of ohmic behavior, Schottky emission, and space-charge-limited conduction (SCLC). Experimental results indicate that increasing the TiO_x film thickness from 31 to 44 nm leads to a notable change in the current conduction mechanism. The results confirm that the memristors have good stability (>1500 s) and are capable of exhibiting excellent long-term potentiation (LTP) and long-term depression (LTD) properties. The analog switching driven by oxygen vacancy-induced barrier modulation in the TiO_x/TiN interface is explained in detail, supported by a proposed model. The remarkable switching characteristics exhibited by the TiO_x-based memristive devices make them highly suitable for artificial synapse applications in neuromorphic computing systems. Full article

Vertical GaN P-i-N diodes exhibit excellent high-voltage performance, fast switching speed, and low conduction losses, making them highly attractive for power applications. However, their breakdown voltage is severely constrained by electric field crowding at device edges. Using silvaco tcad (2019) tools, this work systematically evaluates multiple edge termination techniques, including deep-etched mesa, beveled mesa, and field-plate configurations with both vertical and inclined mesa structures. We present an optimized multi-drift-layer GaN P-i-N diode incorporating field-plate termination and analyze its electrical performance in detail. This study covers forward conduction characteristics including on-state voltage, on-resistance, and their temperature dependence, reverse breakdown behavior examining voltage capability and electric field distribution under different temperatures, and switching performance addressing both forward recovery phenomena, i.e., voltage overshoot and carrier injection dynamics, and reverse recovery characteristics including peak current and recovery time. The comprehensive analysis offers practical design guidelines for developing high-performance GaN power devices. Full article

With the global transition towards renewable energy, pumped storage has become a pivotal technology for large-scale energy storage, playing an essential role in peak load regulation, frequency control, and ensuring the stability of modern power systems. As the core equipment of pumped storage power stations, pump-turbines operate under complex and frequently changing conditions. These units are required to switch repeatedly between pumping, generating, and transitional modes, giving rise to significant fluid–structure interactions (FSIs). Such interactions have a profound impact on the operational performance and stability of the units. This review provides a comprehensive summary of current research on FSIs in pump-turbines, encompassing both experimental investigations and numerical simulations. Key topics discussed include internal flow dynamics, vibration and acoustic characteristics, and structural responses such as runner deformation and stress distribution. Various numerical coupling strategies for FSI modeling are also examined in detail. Despite progress in this field, several challenges remain, including the complexity of multidisciplinary coupling, the difficulty in developing and solving accurate models, and limitations in predictive capabilities. This review highlights the critical requirements for advancing FSI research in pump-turbines and identifies gaps in the current literature that warrant further investigation. Full article

The totem-pole bridgeless power factor correction (PFC) circuit based on the triangular current mode (TCM) in the front-end PFC of a switching power supply has the advantage of realizing zero-voltage switching (ZVS) in the full working range. However, the TCM control based on the critical conduction mode (CRM) further increases the inductance current ripple, and the traditional input voltage AC sampling circuit increases the circuit complexity and device cost. Therefore, this paper studies the corresponding improvement technology from two dimensions. Firstly, the coordinated interleaved parallel technology is employed to design the system’s overall control-improvement strategy. This approach not only achieves full working-range ZVS but also reduces both the inductor current ripple and power device stress. Simultaneously, an optimized input voltage sampling circuit is designed to accommodate varying voltage requirements of control chip pins. This circuit demonstrates strong synchronization in both voltage and phase sampling, and the structural characteristics of the optocoupler can also suppress electrical signal interference. Finally, a 600 W totem-pole bridgeless PFC prototype is developed. The experimental results demonstrate the effectiveness of the proposed improved method. The prototype efficiency peak reaches 97.3%. Full article

The diagnosis of open-circuit (OC) faults in power switches is the premise for implementing fault-tolerant control, a critical aspect in ensuring the reliable operation of three-level hybrid active neutral-point-clamped (HANPC) converters in flexible distribution networks. However, existing fault diagnosis methods do not clearly reveal the relationship between the switching-state sequence state and the modulation voltage before and after the fault, which limits their applicability in grid-tied HANPC converters. In this article, a generalized voltage residuals model, taken as the primary diagnostic variable, is proposed for switch OC fault diagnosis in HANPC converters, and the physical meaning is established by introducing the metric of “the variation of the pulse equivalent area”. To distinguish between faulty switches with similar fault characteristics, the neutral current path is reconfigured with a set of rearranged gate sequences. Meanwhile, the auxiliary diagnostic variable, named the current polarity state variable, is developed by means of a sliding window counting algorithm. Additionally, as a case study, a diagnostic criterion for the single-switch fault of HANPC converters is designed by using proposed diagnostic variables. Experimental results are presented to verify the effectiveness of the proposed fault diagnosis method, which achieves accurate faulty switch identification in all tested scenarios within 25 ms. Full article

Silicon carbide (SiC) half-bridge power modules are widely utilized in new energy power generation, electric vehicles, and industrial power supplies. To address the research gap in collaborative validation between electro-thermal coupling models and process reliability, this paper proposes a closed-loop methodology of “design-simulation-process-validation”. This approach integrates in-depth electro-thermal simulation (LTspice XVII/COMSOL Multiphysics 6.3) with micro/nano-packaging processes (sintering/bonding). Firstly, a multifunctional double-pulse test board was designed for the dynamic characterization of SiC devices. LTspice simulations revealed the switching characteristics under an 800 V operating condition. Subsequently, a thermal simulation model was constructed in COMSOL to quantify the module junction temperature gradient (25 °C → 80 °C). Key process parameters affecting reliability were then quantified, including conductive adhesive sintering (S820-F680, 39.3 W/m·K), high-temperature baking at 175 °C, and aluminum wire bonding (15 mil wire diameter and 500 mW ultrasonic power/500 g bonding force). Finally, a double-pulse dynamic test platform was established to capture switching transient characteristics. Experimental results demonstrated the following: (1) The packaged module successfully passed the 800 V high-voltage validation. Measured drain current (4.62 A) exhibited an error of <0.65% compared to the simulated value (4.65 A). (2) The simulated junction temperature (80 °C) was significantly below the safety threshold (175 °C). (3) Microscopic examination using a Leica IVesta 3 microscope (55× magnification) confirmed the absence of voids at the sintering and bonding interfaces. (4) Frequency-dependent dynamic characterization revealed a 6 nH parasitic inductance via Ansys Q3D 2025 R1 simulation, with experimental validation at 8.3 nH through double-pulse testing. Thermal evaluations up to 200 kHz indicated 109 °C peak temperature (below 175 °C datasheet limit) and low switching losses. This work provides a critical process benchmark for the micro/nano-manufacturing of high-density SiC modules. Full article

This study presents a comprehensive mathematical model of a semiconductor structure based on vanadium dioxide (VO₂), specifically in its conductive phase. The model was developed using the finite element method (FEM), enabling detailed simulation of the formation of a conductive channel under the influence of low-frequency alternating voltage (50 Hz). The VO₂ structure under investigation exhibits pronounced electric field concentration at the surface, where the field strength reaches approximately 5 × 10⁴ V/m, while maintaining a more uniform distribution of around 2 × 10⁴ V/m within the bulk of the material. The simulation results were validated experimentally using a test circuit. Minor deviations—no greater than 8%—were observed between the simulated and measured current values, attributed to magnetic core saturation and modeling assumptions. A distinctive feature of the model is its ability to incorporate the nonlinear dependencies of VO₂’s electrical properties on frequency. Analytical expressions were derived for the magnetic permeability and resistivity of VO₂, demonstrating excellent agreement with experimental data. The coefficients of determination (R²) for the frequency dependence of magnetic permeability and resistance were found to be 0.9976 and 0.9999, respectively. The current version of the model focuses exclusively on the conductive phase and does not include the thermally induced metal–insulator phase transition characteristic of VO₂. The study confirms that VO₂-based structures exhibit high responsiveness and nonlinear switching behavior, making them suitable for applications in electronic surge protection, current limiting, and switching elements. The developed model provides a reliable and physically grounded tool for the design and optimization components based on VO₂ in power electronics and protective circuitry. Full article

Monitoring the peak junction hotspot temperature in IGBT modules is critical for ensuring the reliability of high-power industrial multilevel inverters, particularly when operating under extreme thermal conditions, such as in traction applications. This study presents a comprehensive chip-level analytical loss and thermal model for estimation of the peak junction hotspot temperature in a three-level T-type neutral-point-clamped (TNPC) IGBT module. The developed model includes a detailed analytical assessment of conduction and switching losses, along with transient thermal network modeling, based on the actual electrical and thermal characteristics of the IGBT module. Additionally, a hybrid thermal–electrical stress experimental setup, designed to replicate real operating conditions, was implemented for a balanced three-phase inverter circuit utilizing a Semikron three-level IGBT module, with testing currents reaching 100 A and a critical case temperature of 125 °C. The analytically estimated module losses and peak junction hotspot temperatures were validated through direct experimental measurements. Furthermore, thermal simulations were conducted with Semikron’s SemiSel benchmark tool to cross-validate the accuracy of the thermo-electrical model. The outcomes show a relative estimation error of less than 1% when compared to experimental data and approximately 1.15% for the analytical model. These findings confirm the model’s accuracy and enhance the reliability evaluation of TNPC-IGBT modules in extreme thermal environments. Full article

Multi-channel LED drivers are crucial for high-power lighting applications. Maintaining a constant average forward current is essential for stable LED luminous intensity, necessitating drivers capable of consistent current delivery across wide operating ranges. Meanwhile, achieving precise current sharing among channels without incurring high costs and system complexity is a significant challenge. Leveraging the constant-current characteristics of the LCL-T network, this paper presents a multi-channel DC/DC LED driver comprising a full-bridge inverter, a transformer, and a passive resonant rectifier. The driver generates a high-frequency AC bus with series-connected diode rectifiers, a structure that guarantees excellent current sharing among all output channels using only a single control loop. Fully considering the impact of higher harmonics, this paper derives an exact solution for the output current. A step-by-step parameter design methodology ensures soft switching and enhanced switch utilization. Finally, experimental verification was conducted using a prototype with five channels and 200 W, confirming the correctness and accuracy of the theoretical analysis. The experimental results showed that within a wide input voltage range of 380 V to 420 V, the driver was able to provide a stable current of 700 mA to each channel, and the system could achieve a peak efficiency of up to 94.4%. Full article

The LLC resonant converter, as an isolated DC-DC conversion topology, has been widely adopted in industrial applications. However, when operating under wide input/output voltage ranges, a broad switching frequency range is required to achieve the desired voltage gain. This wide frequency variation complicates the design of magnetic components, causes loss of soft-switching characteristics, and deteriorates electromagnetic interference (EMI) performance. To address these challenges, this paper presents a detailed analysis of the L-LCLC resonant converter. By controlling the connection/disconnection of additional inductors and capacitors through switching devices, the topology achieves structural reconfiguration to enhance the voltage gain range. Optimal mode transition points are selected to ensure stable operation during mode transitions, thereby reducing design complexity, minimizing transition losses, and suppressing voltage/current stress. The parameter design methodology for the additional reactive components is systematically developed. The converter’s performance is validated with Simulink, and the experimental prototype is established with 100 W. Both simulation and experimental results confirm that the L-LCLC resonant converter achieves a wide voltage gain range within a narrow frequency band while maintaining stable mode transitions. Full article

After a ship suffers an external strike, the system is often in a poor state of battle damage. Currently, the support capacity of the system in all aspects decreases dramatically, the operation interval narrows, and it is not easy to ensure the completion of the long-term mission chain, especially when it involves impact loads, which is more significant. Given this, this paper proposes a restoration strategy for the power system of battle-damaged ships based on the long-term mission chain. First, the Ship Power System (SPS) is modelled and analyzed to obtain the multi-case operating characteristics of various types of loads, including impact loads under the mission chain. Second, the frequency and power support capability of energy storage is mined and quantified, and the limitations of its frequency support, power interaction, and other multi-operating states are characterized, based on which the multi-operating state switching strategy of the system containing energy storage is formed, to enhance the active support capability of the system. Subsequently, a frequency response model of the system is established. This model takes into account the support provided by energy storage, analyzes the dynamic evolution of system frequency under the disturbance of directly connected impact loads. Based on this analysis, the safe operating boundary of the system is identified. Finally, a two-stage SPS optimization model is proposed based on the above, and the effectiveness and superiority of this paper’s strategy are verified through simulation analysis of typical scenarios and comparison of multiple strategies. Full article