Search Results (104)

As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga₂O₃) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga₂O₃ remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga₂O₃ thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O₃) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga₂O₃ films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga₂O₃ once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga₂O₃. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga₂O₃ films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>10⁶), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga₂O₃ films and the development of ε-Ga₂O₃-based solar-blind photodetectors for practical applications. Full article

Mg-doped gallium oxide films were prepared on single crystal sapphire substrates through radio frequency magnetron sputtering technology, and then AlN films of different thicknesses were deposited on them as passivation layers. Finally, Pt interdigitated electrodes were prepared through mask plate and ion sputtering technology to make metal–insulator–semiconductor–insulator–metal (MISIM) photodetectors. The influence of the AlN passivation layer on the optical properties and photodetection performance of the device was investigated using UV-Vis (ultraviolet-visible absorption spectroscopy) spectrophotometer and a Keith 4200 semiconductor tester. The device’s performance was significantly enhanced. Among them, the MISIM-structured device achieves a responsivity of 2.17 A/W, an external quantum efficiency (EQE) of 1100%, a specific detectivity (D*) of 1.09 × 10¹² Jones, and a photo-to-dark current ratio (PDCR) of 2200. The results show that different thicknesses of AlN passivation layers have an effect on the detection performance of Mg-doped β-Ga₂O₃ films in the UV detection of the solar-blind UV region. The AlN’s thickness has little effect on the bandgap when it is 3 nm and 5 nm, and the bandgap increases at 10 nm. The transmittance of the film increases with the increase in AlN thickness and decreases when the AlN’s thickness increases to 10 nm. The photocurrent exhibits a non-monotonic dependence on AlN thickness at 10 V, and the dark current gradually decreases. The thickness of the AlN passivation layer also has a significant impact on the response characteristics of the detector, and the response characteristics of the device are best when the thickness of the AlN passivation layer is 5 nm. The responsiveness, detection rate, and external quantum efficiency of the device first increase and then decrease with the thickness of the AlN layer, and comprehensive performance is best when the thickness of the AlN passivation layer is 5 nm. The reason is that the AlN layer plays a passivating role on the surface of Ga₂O₃ films, reducing surface defects and inhibiting its capture of photogenerated carriers, while the appropriate thickness of the AlN layer increases the barrier height at the semiconductor interface, forming a built-in electric field and improving the response speed. Finally, the AlN layer inhibits the adsorption and desorption processes between the photogenerated electron–hole pair and O₂, thereby retaining more photogenerated non-equilibrium carriers, which also helps enhance photoelectric detection performance. Full article

This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. This study is conducted as a fully numerical simulation using the Silvaco Atlas platform, providing detailed electrothermal and optoelectronic analysis of the proposed device. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. In the device architecture, the metal contacts consist of a 2 nm Nickel (Ni) adhesion layer followed by Gold (Au), employed as source and drain electrodes, while a recessed gate embedded within the substrate ensures improved electric field control and effective noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from the typical literature values of the order of ${10}^{-8}$ A to approximately ${10}^{-10}$ A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a SiC substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360 nm ultraviolet (UV) illumination, a high photo-to-dark current ratio (PDCR) found at approximately ${10}^6$, and tunable performance via structural optimization of p-GaN width between 0.40 μm and 1.60 μm, doping concentration from $5\times {10}^{16}$ ${\mathrm{cm}}^{-3}$ to $5\times {10}^{18}$ ${\mathrm{cm}}^{-3}$, and embedding depth between 0.060 μm and 0.068 μm. The results underscore the proposed structure’s notable effectiveness in passivation quality, suppression of gate leakage, and thermal management, collectively establishing it as a robust and reliable platform for next-generation UV photodetectors operating under harsh environmental conditions. Full article

In this paper, various Ga₂O₃ films, including amorphous Ga₂O₃ films, β-Ga₂O₃, and α-Ga₂O₃ epitaxial films, have been nitridated and converted to single-crystalline GaN layers on the surface. Although the original Ga₂O₃ films are different, all the converted GaN layers exhibit the (002) preferred orientation and the porous morphologies. The ~200 µm GaN thick films have been grown on the nitridated Ga₂O₃ films using the halide vapor phase epitaxy (HVPE) method. Raman analysis indicates that all the HVPE-GaN films grown on nitridated Ga₂O₃ films are almost stress-free. An obvious GaN porous layer/Ga₂O₃ structure has been observed in the interface between GaN thick films and sapphire substrates. The porous GaN layers can be used as promising templates for the preparation of free-standing GaN substrates. Full article

Background and Objectives: Conventional methods for removing cemented fixed prosthetic restorations (FPRs) are unreliable and lead to unsatisfactory outcomes. At their best, they allow the tooth to be saved at the expense of a laborious process that also wears down rotating tools and handpieces and occasionally results in abutment fractures. Restorations are nearly never reusable in any of these situations. Erbium-doped yttrium-aluminum-garnet (Er:YAG) and erbium-chromium yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers casafely and effectively remove FPRs, according to scientific studiesre. This study sets out to examine the impact of Er:YAG laser radiation on the debonding of different ceramic restorations, comparing the behavior of various ceramic prosthetic restoration types under laser radiation action and evaluating the integrity of prosthetic restorations and dental surfaces exposed to laser radiation. Materials and Methods: The study included a total of 16 removed teeth, each prepared on opposite surfaces as abutments.y. Based on the previously defined groups, four types of ceramic restorations were included in the study: feldspathic (F), lithium disilicates (LD), layered zirconia (LZ), and monolithic zirconia (MZ). The thickness of the prosthetic restorations was measured at three points, and two different materials were used for cementation. The Er:YAG Fotona StarWalker MaQX laser was used to debond the ceramic FPR at a distance of 10 mm using an R14 sapphire tip with 275 mJ, 20 Hz, 5.5 W, with air cooling (setting 1 of 9) and water. After debonding, the debonded surface was visualized under electron microscopy. Results: A total of 23 ceramic FPRs were debonded, of which 12 were intact and the others fractured into two or three pieces. The electron microscopy images showed that debonding took place without causing any harm to the tooth structure. The various restoration types had the following success rates: 100% for the LZ and F groups, 87% for the LD group, and 0% for the MZ group. In terms of cement type, debonding ceramic FPRs cemented with RELYX was successful 75% of the time, compared to Variolink DC’s 69% success rate. Conclusions: In summary, the majority of ceramic prosthetic restorations can be successfully and conservatively debonded with Er:YAG radiation. Full article

This paper investigates the relationship between the physical properties of NbN thin films and a series of different substrates/buffer layers used for the thin film growth. Substrates, including 4H-SiC, AlN/Si, AlN/sapphire, and annealed AlN/sapphire, were selected for NbN film deposition via DC magnetron sputtering. Post-deposition annealing was also employed to study its impact on the films’ quality. Comprehensive characterizations were performed on NbN films, focusing on superconducting critical temperature (T_C), transition width (ΔT_C), crystalline quality, and surface roughness. The results demonstrate that the annealed NbN films grown on 4H-SiC substrates with the highest crystalline quality exhibit optimal crystalline quality, achieving a T_C of 16.3 K. Experimental results reveal intrinsic correlations between the critical properties of NbN superconducting thin films and substrate structural characteristics; the impact of post-growth annealing on the T_C is also studied. Full article

The reflectance (R) of linear and circular micro-gratings on c-plane sapphire Al₂O₃ ablated by a femtosecond (fs) laser were spectrally characterised for thermal emission $\propto (1-R)$ in the mid-to-far infrared (IR) spectral range. An IR camera was used to determine the blackbody radiation temperature from laser-patterned regions, which showed (3–6)% larger emissivity dependent on the grating pattern. The azimuthal emission curve closely followed the Lambertian angular profile $\propto cos{\theta }_a$ at the 7.5–13 μm emission band. The back-side ablation method on transparent substrates was employed to prevent debris formation during energy deposition as it applies a forward pressure of >0.3 GPa to the debris and molten skin layer. The back-side ablation maximises energy deposition at the exit interface where the transition occurs from the high-to-low refractive index. Phononic absorption in the Reststrahlen region 20–30 μm can be tailored with the fs laser inscription of sensor structures/gratings. Full article

Residual stresses in multilayer thin coatings represent a complex multiscale phenomenon arising from the intricate interplay of multiple factors, including the number and thickness of layers, material properties of the layers and substrate, coefficient of thermal expansion (CTE) mismatch, deposition technique and growth mechanism, as well as process parameters and environmental conditions. A multiscale approach to residual stress measurement is essential for a comprehensive understanding of stress distribution in such systems. To investigate this, two AlGaN/GaN multilayer coatings with distinct layer architectures were deposited on sapphire substrates using metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction (HRXRD) was employed to confirm their epitaxial growth and structural characteristics. Focused ion beam (FIB) cross-sectioning and transmission electron microscopy (TEM) lamella preparation were performed to analyze the coating structure and determine layer thickness. Residual stresses within the multilayer coatings were evaluated using two complementary techniques: High-Resolution Scanning Transmission Electron Microscopy—Graphical Phase Analysis (HRSTEM-GPA) and Focused Ion Beam—Digital Image Correlation (FIB-DIC). HRSTEM-GPA enables atomic-resolution strain mapping, making it particularly suited for investigating interface-related stresses, while FIB-DIC facilitates microscale stress evaluation. The residual strain values obtained using the FIB-DIC and HRSTEM-GPA methods were −3.2 × 10⁻³ and −4.55 × 10⁻³, respectively. This study confirms that residual stress measurements at different spatial resolutions are both reliable and comparable at the required coating depths and locations, provided that a critical assessment of the characteristic scale of each method is performed. Full article

{CdO/ZnO}_m superlattices (SLs) have been grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The observation of satellite peaks in the XRD studies of the as-grown and annealed samples confirms the presence of a periodic superlattice structure. The properties of as-grown and annealed SLs deposited on c-oriented sapphire were investigated by transmission electron microscopy, X-ray diffraction and temperature dependent PL studies. The deformation of the SLs structure was observed after rapid thermal annealing. As the thermal annealing temperature increases, the diffusion of Cd ions from the quantum well layers into the ZnO barrier increases. The formation of CdZnO layers causes changes in the luminescence spectrum in the form of peak shifts, broadening and changes in the spacing of the satellite peaks visible in X-ray analysis. Full article

A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. High-resolution X-ray diffraction (HRXRD) analysis reveals the impact of thermal annealing on the mosaic structure of the GaN, specifically the tilt and twist variations in four planes: (00.2), (10.3), (10.2), and (10.1). Interestingly, the observed trends suggest a differential effect of annealing on screw and edge dislocation densities. The annealing process reduces the edge and screw dislocation density. Lower values (D_screw = 1.2 × 10⁸ cm⁻²; D_edge = 1.6 × 10⁹ cm⁻²) were obtained for the sample annealed at 1050 °C. Notably, both tilt and twist angles exhibited a minimum at 1050 °C (tilt = 252 arcsecs, and twist = 558 arcsecs), indicating improved crystal quality at this specific temperature. Photoluminescence (PL) spectroscopy further complemented the structural analysis. The intensity and broadening of the yellow band (YL) in the PL spectra progressively increased with the increasing annealing temperature, suggesting the presence of additional defect states. The near band edge PL emission (3.35 and 3.41 eV) variation upon thermal annealing was correlated with the mosaic structure evolution. Full article

Sapphire has various applications in photonics due to its broadband transparency, high-contrast index, and chemical and physical stability. Photonics integration on the sapphire platform has been proposed, along with potentially high-performance lasers made of group III–V materials. In parallel with developing active devices for photonics integration applications, in this work, silicon nitride optical waveguides on a sapphire substrate were analyzed using the commercial software Comsol Multiphysics in a spectral window of 800~2400 nm, covering the operating wavelengths of III–V lasers, which could be monolithically or hybridly integrated on the same substrate. A high confinement factor of ~90% near the single-mode limit was obtained, and a low bending loss of ~0.01 dB was effectively achieved with the bending radius reaching 90 μm, 70 μm, and 40 μm for wavelengths of 2000 nm, 1550 nm, and 850 nm, respectively. Furthermore, the use of a pedestal structure or a SiO₂ bottom cladding layer has shown potential to further reduce bending losses. The introduction of a SiO₂ bottom cladding layer effectively eliminates the influence of the substrate’s larger refractive index, resulting in further improvement in waveguide performance. The platform enables tightly built waveguides and small bending radii with high field confinement and low propagation losses, showcasing silicon nitride waveguides on sapphire as promising passive components for the development of high-performance and cost-effective PICs. Full article

The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power HEMTs on 6-inch sapphire substrates using a CMOS-compatible process. A 1.5 µm thin GaN buffer layer with excellent uniformity and a 20 nm in situ SiN gate dielectric ensured uniformly distributed V_TH and R_ON across the entire 6-inch wafer. The fabricated devices with an L_GD of 30 µm and W_G of 36 mm exhibited an R_ON of 18.06 Ω·mm and an off-state breakdown voltage of over 3 kV. The electrical mapping visualizes the high uniformity of R_ON and V_TH distributed across the whole 6-inch wafer, which is of great significance in promoting the applications of GaN power HEMTs for medium-voltage power electronics in the future. Full article

A novel AgCuTi brazing foil with a unique microstructure was developed, which could achieve strong vacuum brazing of Ti6Al4V (TC4) and sapphire. The brazing foil was composed of Ag solid solution (Ag(s,s)), Cu solid solution (Cu(s,s)), and layered Ti-rich phases, and had a low liquidus temperature of 790 °C and a narrow melting range of 16 °C, facilitating the defect-free joining of TC4 and sapphire. The sapphire/TC4 joint fabricated by using this novel AgCuTi brazing foil exhibited an outstanding average shear strength of up to 132.2 MPa, which was the highest value ever reported. The sapphire/TC4 joint had a characteristic structure, featuring a brazing seam reinforced by TiCu particles and a thin Ti₃(Cu,Al)₃O reaction layer of about 1.3 μm. The fracture mechanism of the sapphire/TC4 joint was revealed. The crack originated at the brazing seam with TiCu particles, then propagated through the Ti₃(Cu,Al)₃O reaction layer, detached the reaction layer from the sapphire, and finally penetrated into the sapphire. This study offers valuable insights into the design of active brazing alloys and reliable metal–ceramic bonding. Full article

This study presents the structure and optoelectronic properties of a perovskite-like (PEA)₂PbBr₃Cl material on an AlN/sapphire substrate heterostructure prepared using spin coating. The AlN/sapphire substrate comprised a 2 μm thick AlN epilayer on a sapphire wafer deposited via metal–organic chemical vapor deposition (MOCVD). The peak position of (PEA)₂PbBr₃Cl photoluminescence (PL) on the AlN/sapphire substrate heterostructure was 372 nm. The emission wavelength ranges of traditional lead halide perovskite light-emitting diodes are typically 410 to 780 nm, corresponding to the range of purple to deep red as the ratio of halide in the perovskite material changes. This indicates the potential for application as a UV perovskite light-emitting diode. In this study, we investigated the contact characteristics between Ag metal and the (PEA)₂PbBr₃Cl layer on an AlN/sapphire substrate heterostructure, which improved after annealing in an air environment due to the tunneling effect of the thermionic-field emission (TFE) mechanism. Full article

Ga₂O₃, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga₂O₃ was used as the substrate for epitaxial growth of Ga₂O₃. Here, the epitaxial layers of Ga₂O₃ were deposited by MOCVD on patterned sapphire substrates. The structure of epitaxial Ga₂O₃ layers on patterned substrates has been identified by X-ray diffractometry. To investigate the influence of the patterned substrates on the formation of epitaxial layers, thin Ga₂O₃ layers were grown on a flat sapphire substrate under the same conditions. Both types of samples were β-phase. However, no improvement in the layers’ crystalline quality was discovered when utilizing patterned sapphire substrates. In addition, the performance of the obtained two types of Ga₂O₃ photodetectors was compared. The photoelectric properties, such as responsivity, response speed, and detection capability, were different in the case of flat samples. Full article