Search Results (1,269)

Grain boundaries are among the most influential structural features that control the charge transport in polycrystalline organic semiconductors. Acting as both charge trapping sites and electrostatic barriers, they disrupt molecular packing and introduce energetic disorder, thereby limiting carrier mobility, increasing threshold voltage, and degrading the stability of organic thin-film transistors (OTFTs). This review presents a detailed discussion of grain boundary formation, their impact on charge transport, and experimental strategies for engineering their structure and distribution across several high-mobility small-molecule semiconductors, including pentacene, TIPS pentacene, diF-TES-ADT, and rubrene. We explore grain boundary engineering approaches through solvent design, polymer additives, and external alignment methods that modulate crystallization dynamics and domain morphology. Then various case studies are discussed to demonstrate that optimized processing can yield larger, well-aligned grains with reduced boundary effects, leading to great mobility enhancements and improved device stability. By offering insights from structural characterization, device physics, and materials processing, this review outlines key directions for grain boundary control, which is essential for advancing the performance and stability of organic electronic devices. Full article

This review synthesized the current knowledge on the effect of TiO₂ photocatalysts on the degradation of microplastics (MPs) and nanoplastics (NPs) under visible light, highlighting the state-of-the-art techniques, main challenges, and proposed solutions for enhancing the performance of the photocatalysis technique. The synthesis of TiO₂-based photocatalysts and hybrid nanostructured TiO₂ materials, including those coupled with other semiconductor materials, is explored. Studies on TiO₂-based photocatalysts for the degradation of MPs and NPs under visible light remain limited. The degradation behavior is influenced by the composition of the TiO₂ composites and the nature of different types of MPs/NPs. Polystyrene (PS) MPs demonstrated complete degradation under visible light photocatalysis in the presence of α-Fe₂O₃ nanoflowers integrated into a TiO₂ film with a hierarchical structure. However, photocatalysis generally fails to achieve the full degradation of small plastic pollutants at the laboratory scale, and its overall effectiveness in breaking down MPs and NPs remains comparatively limited. Full article

We present a neural-network-based approach to solve the image-to-image translation problem in microscale droplets squeeze flow. A residual convolutional neural network is proposed to address the inverse problem: reconstructing a low-resolution (LR) droplet pattern image from a high-resolution (HR) liquid film thickness imprint. This enables the prediction of initial droplet configurations that evolve into target HR imprints after a specified spreading time. The developed neural network architecture aims at learning to tune the refinement level of its residual convolutional blocks by using function approximators that are trained to map a given film thickness to an appropriate refinement level indicator. We use multiple stacks of convolutional layers, the output of which is translated according to the refinement level indicators provided by the directly connected function approximators. Together with a non-linear activation function, the translation mechanism enables the HR imprint image to be refined sequentially in multiple steps until the target LR droplet pattern image is revealed. We believe that this work holds value for the semiconductor manufacturing and packaging industry. Specifically, it enables desired layouts to be imprinted on a surface by squeezing strategically placed droplets with a blank surface, eliminating the need for customized templates and reducing manufacturing costs. Additionally, this approach has potential applications in data compression and encryption. Full article

During the last few years, the requirements for highly efficient, sustainable, and versatile materials in modern biomedicine, aircraft and aerospace industries, automotive production, and electronic and electrical engineering applications have increased. This has led to the development of new and innovative methods for material modification and optimization. This can be achieved in many different ways, but one such approach is the application of surface thin films. They can be conductive (metallic), semi-conductive (metal-ceramic), or isolating (polymeric). Special emphasis is placed on applying semi-conductive thin films due to their unique properties, be it electrical, chemical, mechanical, or other. The particular thin films of interest are composite ones of the type of transition metal oxide (TMO) and transition metal nitride (TMN), due to their widespread configurations and applications. Regardless of the countless number of studies regarding the application of such films in the aforementioned industrial fields, some further possible investigations are necessary to find optimal solutions for modern problems in this topic. One such problem is the possibility of characterization of the applied thin films, not via textbook approaches, but through a simple, modern solution using their electrical properties. This can be achieved on the basis of measuring the films’ electrical impedance, since all different semi-conductive materials have different impedance values. However, this is a huge practical work that necessitates the collection of a large pool of data and needs to be based on well-established methods for both characterization and formation of the films. A thorough review on the topic of applying thin films using physical vapor deposition techniques (PVD) in the field of different modern applications, and the current results of such investigations are presented. Furthermore, current research regarding the possible methods for applying such films, and the specifics behind them, need to be summarized. Due to this, in the present work, the specifics of applying thin films using PVD methods and their expected structure and properties were evaluated. Special emphasis was paid to the electrical impedance spectroscopy (EIS) method, which is typically used for the investigation and characterization of electrical systems. This method has increased in popularity over the last few years, and its applicability in the characterization of electrical systems that include thin films formed using PVD methods was proven many times over. However, a still lingering question is the applicability of this method for backwards engineering of thin films. Currently, the EIS method is used in combination with traditional techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and others. There is, however, a potential to predict the structure and properties of thin films using purely a combination of EIS measurements and complex theoretical models. The current progress in the development of the EIS measurement method was described in the present work, and the trend is such that new theoretical models and new practical testing knowledge was obtained that help implement the method in the field of thin films characterization. Regardless of this progress, much more future work was found to be necessary, in particular, practical measurements (real data) of a large variety of films, in order to build the composition–structure–properties relationship. Full article

Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm²/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies. Full article

Nonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation and recombination. In this study, a hybrid transistor based on a mixed-halide perovskite was fabricated to achieve dynamic nonlinear changes in synaptic plasticity. The utilization of a light-induced mixed-bandgap structure within the mixed perovskite film has been demonstrated to increase the recombination paths of photogenerated carriers of the hybrid film, thereby promoting the formation of nonlinear signals in the device. The constructed heterojunction optoelectronic synaptic transistor, formed by combining a mixed-halide perovskite with a p-type semiconductor, generates dynamic nonlinear decay responses under 400 nm light pulses with an intensity as low as 0.02 mW/cm². Furthermore, it has been demonstrated that nonlinear photocurrent growth can be achieved under 650 nm light pulses. It is important to note that this novel nonlinear response is characterized by its dynamism. These improvements provide a novel method for expanding the modulation capability of optoelectronic synaptic devices for synaptic plasticity. Full article

This paper focuses on the switching and modulation techniques of terahertz waves, develops ${\mathrm{VO}}_2$ thin-film materials with an SPP structure, and uses terahertz time-domain spectroscopy (THz-TDS) to study the semiconductor–metal phase transition characteristics of ${\mathrm{VO}}_2$ thin films, especially the photoinduced semiconductor–metal phase transition characteristics of silicon-based ${\mathrm{VO}}_2$ thin films. The optical modulation characteristics of silicon-based ${\mathrm{VO}}_2$ thin films to terahertz waves under different light excitation modes, such as continuous light irradiation at different wavelengths and femtosecond pulsed laser irradiation, were analyzed. Combining the optical modulation characteristics of silicon-based ${\mathrm{VO}}_2$ thin films with the filtering characteristics of SPP structures, composite structures of ${\mathrm{VO}}_2$ thin films with metal hole arrays, composite structures of ${\mathrm{VO}}_2$ thin films with metal block arrays, and silicon-based ${\mathrm{VO}}_2$ microstructure arrays were designed. The characteristics of this dual-function device were tested experimentally. The experiment proves that the ${\mathrm{VO}}_2$ film material with an SPP structure has a transmission rate dropping sharply from 32% to 1% under light excitation; the resistivity changes by more than six orders of magnitude, and the modulation effect is remarkable. By applying the SPP structure to the ${\mathrm{VO}}_2$ material, the material can simultaneously possess modulation and filtering functions, enhancing its optical performance in the terahertz band. Full article

Recently, with the development of automation technology in various fields, much research has been conducted on infrared photodetectors, which are the core technology of LiDAR sensors. However, most infrared photodetectors are expensive because they use compound semiconductors based on epitaxial processes, and they have low safety because they use the near-infrared (NIR) region that can damage the retina. Therefore, they are difficult to apply to automation technologies such as automobiles and factories where humans can be constantly exposed. In contrast, short-wavelength infrared photodetectors based on PbS QDs are actively being developed because they can absorb infrared rays in the eye-safe region by controlling the particle size of QDs and can be easily and inexpensively manufactured through a solution process. However, PbS QDs-based SWIR photodetectors have low chemical stability due to the electron/hole extraction layer processed by the solution process, making it difficult to manufacture them in the form of patterning and arrays. In this study, bulk NiO and ZnO were deposited by sputtering to achieve uniformity and patterning of thin films, and the performance of PbS QDs-based photodetectors was improved by optimizing the thickness and annealing conditions of the thin films. The fabricated photodetector achieved a high response characteristic of 114.3% through optimized band gap and improved transmittance characteristics. Full article

Titanium dioxide (TiO₂) is a benchmark photocatalyst for environmental applications, but its limited visible-light activity due to a wide band gap and fast charge recombination restricts its practical efficiency. This study presents the development of heterostructured Ag (Au)/MoS₂-TiO₂ inverse opal (IO) films that synergistically integrate photonic, plasmonic, and semiconducting functionalities to overcome these limitations. The materials were synthesized via a one-step evaporation-induced co-assembly approach, embedding MoS₂ nanosheets and plasmonic nanoparticles (Ag or Au) within a nanocrystalline TiO₂ photonic framework. The inverse opal architecture enhances light harvesting through slow-photon effects, while MoS₂ and plasmonic nanoparticles improve visible-light absorption and charge separation. By tuning the template sphere size, the photonic band gap was aligned with the TiO₂-MoS₂ absorption edge and the localized surface plasmon resonance of Ag, enabling optimal spectral overlap. The corresponding Ag/MoS₂-TiO₂ photonic films exhibited superior photocatalytic and photoelectrocatalytic degradation of tetracycline under visible light. Ultraviolet photoelectron spectroscopy and Mott–Schottky analysis confirmed favorable band alignment and Fermi level shifts that facilitate interfacial charge transfer. These results highlight the potential of integrated photonic–plasmonic-semiconductor architectures for efficient solar-driven water treatment. Full article

There is considerable interest in broadband nanomaterials, particularly transparent semiconductor oxides, within both fundamental research and technological applications. Historically, it has been considered that the variation in dopant concentration during the synthesis of semiconductor materials is a crucial factor in activating and/or modulating the optical and structural properties, particularly the bandgap and the parameters of the unit cell, of semiconductor oxides. Recently, tin oxide has emerged as a key material due to its excellent structural properties, optical transparency, and various promising applications in optoelectronics. This study utilized the ultrasonic spray pyrolysis technique to synthesize aluminum-doped tin oxide (ATO) thin films on quartz and polished single-crystal silicon substrates. The impact of varying aluminum doping levels (0, 2, 5, and 10 at. %) on morphology and structural and optical properties was examined. The ATO thin films were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmittance spectroscopy. SEM images demonstrated a slight reduction in the size of ATO nanoparticles as the aluminum doping concentration increased. XRD analysis revealed a tetragonal crystalline structure with the space group P42/mnm, and a shift in the XRD peaks to higher angles was noted with increasing aluminum content, indicating a decrease in the crystalline lattice parameters of ATO. The transmittance of the ATO films varied between 75% and 85%. By employing the transmittance spectra and the established Tauc formula the optical bandgap values of ATO films were calculated, showing an increase in the bandgap with higher doping levels. These findings were thoroughly analyzed and discussed; additionally, an effort was made to clarify the contradictory analyses present in the literature and to identify a doping range that avoids the onset of a secondary phase. Full article

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH₃) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si₁₅H₁₈–(NH₂)₂ and Si₁₅H₂₀=(NH)₂ clusters was modeled, where –NH₂ and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH₂-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH₃ adsorbs onto the residual TMG on the =NH- and –NH₂-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH₃ adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH₂⁻ species generated in the gas phase from ionized NH₃ may help reduce the process temperature in the GaN-ALD process. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta₂O₅ (δ-Ta₂O₅) films doped with tungsten (W) were deposited on α-Al₂O₃ (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta₂O₅ ($10\overline{1}1$) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10⁴ Ω∙cm, and the maximum carrier concentration was 7.39 × 10¹⁴ cm³. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article

In this work, we present the development and validation of an automated system for the Successive Ionic Layer Adsorption and Reaction (SILAR) method, aimed at depositing Cu₂ZnSnS₄ (CZTS) thin films. The system is based on a Raspberry Pi Pico microcontroller programmed in Micro-Python (Thonny 4.0.2), allowing precise control over immersion sequences, timing intervals, and substrate positioning along two degrees of freedom. Automation enhances reproducibility, safety, and reduces human error compared with manual operation. CZTS films were deposited on borosilicate glass and optically and structurally characterized. A gradual darkening of the films with increasing deposition cycles indicates controlled material accumulation. X-ray diffraction (XRD) and Raman spectroscopy confirmed the presence of CZTS phases, although with a partially amorphous structure. The estimated optical bandgap of ~1.34 eV is consistent with photovoltaic applications. These results validate the functionality of the automated SILAR platform for repeatable and scalable thin-film fabrication, offering a low-cost alternative for producing semiconductor absorber layers in solar energy technologies. Full article

In the present work a-SiC:H thin films were prepared using magnetron sputtering technique for different substrate temperatures from 100 °C to 290 °C. Their optical properties were studied using the ellipsometry technique. The experimental results show that the optical band gap of the films varies from 2.00 eV to 2.18 eV for the hydrogenated films, whereas the Eg is equal to 1.29 eV when the film does not contain hydrogen atoms and for Ts = 100 °C. The refractive index has been observed to remain stable in the region of 100 °C–220 °C, whereas it drops significantly when the temperature of 290 °C is reached. Additionally, the refractive index exhibits an inverse relationship with Eg as a function of Ts. Notably, these thin films were deposited 12 years ago, and their optical properties have remained stable since then. Full article