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Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs

F. Elmourabit,
S. Dlimi,
A. El Moutaouakil,
F. Id Ouissaaden,
A. Khoukh,
L. Limouny,
H. Elkhatat and
A. El Kaaouachi

Nanomaterials2023, 13(14), 2047;https://doi.org/10.3390/nano13142047

11 July 2023

Our investigation focuses on the analysis of the conductive properties of high-mobility 2D-Si-MOSFETs as they approach the critical carrier density, $n_{s c}$ (approximately $0.72 \times 10^{11} {c m}^{- 2}$ ), which marks the metal insulator transition (MIT)...

(This article belongs to the Special Issue Abridging the CMOS Technology II)

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Nature of the Metal Insulator Transition in High-Mobility 2D_Si-MOSFETs