Search Results (121)

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evaluates recent advances in CVD techniques for h-BN synthesis on insulating substrates, including metal–organic CVD (MOCVD), low-pressure CVD (LPCVD), atmospheric-pressure CVD (APCVD), and plasma-enhanced CVD (PECVD). Key challenges, including precursor selection, high-temperature processing, achieving single-crystalline films, and maintaining phase purity, are critically analyzed. Special emphasis is placed on comparative performance metrics across different growth methodologies. Furthermore, crucial research directions for future development in this field are outlined. This review aims to serve as a reference for advancing h-BN synthesis toward practical applications in next-generation electronic and optoelectronic devices. Full article

Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta₂O₅ (δ-Ta₂O₅) films doped with tungsten (W) were deposited on α-Al₂O₃ (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta₂O₅ ($10\overline{1}1$) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10⁴ Ω∙cm, and the maximum carrier concentration was 7.39 × 10¹⁴ cm³. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article

Gallium nitride (GaN) is commonly used in various semiconductor systems owing to its high mobility and thermal stability; however, the production of GaN thin films using the currently employed methods requires improvement. To facilitate the growth of high-quality GaN epitaxial thin films, this study explored the crystallographic structures, properties, and influences of chromium nitride (CrN) buffer layers sputtered under various conditions. The crystallographic orientation of CrN played a crucial role in determining the GaN film quality. For example, even when the crystallinity of the CrN (111) plane was relatively low, a single-phase CrN (111) buffer layer could provide a more favorable template for GaN epitaxy compared to cases where both the CrN (111) and Cr₂N (110) phases coexisted. The significance of a low-temperature (LT) GaN nucleation layer deposited onto the CrN buffer layers was assessed using atomic force microscopy and contact angle measurements. The X-ray phi scan results confirmed the six-fold symmetry of the grown GaN, further emphasizing the contribution of an LT-GaN nucleation layer. These findings offer insights into the underlying mechanisms governing GaN thin film growth and provide guidance for the optimization of the buffer layer conditions to achieve high-quality GaN epitaxial films. Full article

Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications. Full article

With the wide application of the gallium nitride (GaN) preparation method based on Metal–Organic Chemical Vapor Deposition (MOCVD), the automation of MOCVD equipment has become a research hotspot. This paper explores the automation scheme of MOCVD reaction chamber cleaning to improve productivity and reduce labor costs. Firstly, this paper establishes the kinematic solution model of a MOCVD cleaning robot and designs the cleaning robot path planning control algorithm. Considering the error between the initial position of the robot end-effector and the desired initial position in practical applications, this paper further designs a fault-tolerant motion planning algorithm for the initial position error. The simulation results show that the method can effectively reduce the initial position error and make it converge exponentially to zero. Finally, this paper builds the robot control system of the cleaning system and verifies the cleaning effect through tests. The test results show that the system can meet the actual use requirements and realize the reaction chamber cleaning automation goal. Full article

Graded-interfaces modeling unveils key features of high-power, high-efficiency quantum-cascade lasers (QCLs): direct resonant-tunneling injection from a prior-stage, low-energy state into the upper-laser (ul) level, over a wide (~50 nm) multiple-barrier region; and a new type of photon-induced carrier transport (PICT). Stage-level QCL operation primarily involves two steps: injection into the ul level and photon-assisted diagonal transition. Furthermore, under certain conditions, a prior-stage low-energy state, extending deep into the next stage, is the ul level, thus making such devices injectionless QCLs and leading to stronger PICT action due to quicker gain recovery. Thermalization within a miniband ensures population inversion between a state therein and a state in the next miniband. Using graded-interfaces modeling, step-tapered active-region (STA) QCLs possessing PICT action have been designed for carrier-leakage suppression. A preliminary 4.6 µm emitting STA design of a metal–organic chemical-vapor deposition (MOCVD)-grown QCL led to an experimental 19.1% front-facet, peak wall-plug efficiency (WPE). Pure, diffraction-limited beam operation is obtained at 1.3 W CW power. A low-leakage 4.7 µm emitting design provides a projected 24.5% WPE value, considering MOCVD-growth, graded-interface interface-roughness (IFR) parameters, and waveguide loss (α_w). The normalized leakage-current density, J_leak/J_th, is 17.5% vs. 28% for the record-WPE 4.9 µm emitting QCL. Then, when considering the IFR parameters and α_w values of optimized-crystal-growth QCLs, J_leak/J_th decreases to 13.5%, and the front-facet WPE value reaches 33%, thus approaching the ~41% fundamental limit. The potential of graded-interfaces modeling to become the design tool for achieving room-temperature operation of terahertz QCLs is discussed. Full article

A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging from 1000 °C to 1120 °C. High-resolution X-ray diffraction (HRXRD) analysis reveals the impact of thermal annealing on the mosaic structure of the GaN, specifically the tilt and twist variations in four planes: (00.2), (10.3), (10.2), and (10.1). Interestingly, the observed trends suggest a differential effect of annealing on screw and edge dislocation densities. The annealing process reduces the edge and screw dislocation density. Lower values (D_screw = 1.2 × 10⁸ cm⁻²; D_edge = 1.6 × 10⁹ cm⁻²) were obtained for the sample annealed at 1050 °C. Notably, both tilt and twist angles exhibited a minimum at 1050 °C (tilt = 252 arcsecs, and twist = 558 arcsecs), indicating improved crystal quality at this specific temperature. Photoluminescence (PL) spectroscopy further complemented the structural analysis. The intensity and broadening of the yellow band (YL) in the PL spectra progressively increased with the increasing annealing temperature, suggesting the presence of additional defect states. The near band edge PL emission (3.35 and 3.41 eV) variation upon thermal annealing was correlated with the mosaic structure evolution. Full article

Lanthanum oxide (La₂O₃) layers are widely used in electronics, optics, and optoelectronics due to their properties. Lanthanum oxide is also used as a dopant, modifying and improving the properties of other materials in the form of layers, as well as having a large volume. In this work, lanthanum oxide layers were obtained using MOCVD (Metalorganic Chemical Vapor Deposition) on the inner walls of tubular substrates at 600–750 °C. The basic reactant was La(tmhd)₃ (tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum(III)). The evaporation temperature of La(tmhd)₃ amounted to 170–200 °C. Pure argon (99.9999%) and air were used as the carrier gases. The air was also intended to remove the carbon from the synthesized layers. Tubes of quartz glass were used as the substrates. La₂O₃ layers were found to be growing on their inner surfaces. The value of the extended Gr_x/Re_x² criterion, where Gr—Grashof’s number, Re—Reynolds’ number, x—the distance from the gas inflow point, was below 0.01. The microstructure of the deposited layers of lanthanum oxide was investigated using an electron scanning microscope (SEM). Their chemical composition was analyzed via energy-dispersive X-ray (EDS) analysis. Their phase composition was tested via X-ray diffraction. The transmittance of the layers of lanthanum oxide was determined with the use of UV-Vis spectroscopy. The obtained layers of lanthanum oxide were characterized by a nanocrystalline microstructure and stable cubic structure. They also exhibited good transparency in both ultraviolet (UV) and visible (Vis) light. Full article

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect transistors (HEMTs), etc. We investigated the quality and optical properties of Al_xGa_1−xN films with high Al fractions (60–87%) grown on sapphire substrates, including AlN nucleation and buffer layers, by metal–organic chemical vapor deposition (MOCVD). They were initially investigated by high-resolution X-ray diffraction (HR-XRD) and Raman scattering (RS). A set of formulas was deduced to precisely determine x(Al) from HR-XRD data. Screw dislocation densities in AlGaN and AlN layers were deduced. DUV (266 nm) excitation RS clearly exhibits AlGaN Raman features far superior to visible RS. The simulation on the AlGaN longitudinal optical (LO) phonon modes determined the carrier concentrations in the AlGaN layers. The spatial correlation model (SCM) analyses on E₂(high) modes examined the AlGaN and AlN layer properties. These high-x(Al) Al_xGa_1−xN films possess large energy gaps E_g in the range of 5.0–5.6 eV and are excited by a DUV 213 nm (5.8 eV) laser for room temperature (RT) photoluminescence (PL) and temperature-dependent photoluminescence (TDPL) studies. The obtained RTPL bands were deconvoluted with two Gaussian bands, indicating cross-bandgap emission, phonon replicas, and variation with x(Al). TDPL spectra at 20–300 K of Al_0.87Ga_0.13N exhibit the T-dependences of the band-edge luminescence near 5.6 eV and the phonon replicas. According to the Arrhenius fitting diagram of the TDPL spectra, the activation energy (19.6 meV) associated with the luminescence process is acquired. In addition, the combined PL and time-resolved photoluminescence (TRPL) spectroscopic system with DUV 213 nm pulse excitation was applied to measure a typical AlGaN multiple-quantum well (MQW). The RT TRPL decay spectra were obtained at four wavelengths and fitted by two exponentials with fast and slow decay times of ~0.2 ns and 1–2 ns, respectively. Comprehensive studies on these Al-rich AlGaN epi-films and a typical AlGaN MQW are achieved with unique and significant results, which are useful to researchers in the field. Full article

The growth interruption technology is introduced to the growth of GaAsP/InAlGaAs quantum well (QW) structure using metal–organic chemical vapor deposition (MOCVD). The effect of growth interruption time (GIT) on the crystalline quality and optical properties are investigated. The two distinctive emission peaks are the transition recombination between the electron level of conduction band and the light and heavy hole level of valence band in the photoluminescence (PL) at room temperature. The PL peaks present a redshift and merge together with the increasing GIT, which is attributed to the QW energy level shift caused by the increase in arsenic concentrations in GaAsP QW, the diversified thickness of QW and the variations of indium components in the InAlGaAs barrier layer. The Gaussian deconvolution parameters in temperature-dependent PL (TDPL) show that the GaAsP/InAlGaAs QW with a GIT of 6 s has a 565.74 meV activation energy, enhancing the carrier confinement in QW and the PL intensity, while the 6 s-GIT GaAsP QW has the increasing interface roughness and the non-radiative centers at the InGaAsP intermediate layer, leading to a spectral broadening. The QW with 10 s-GIT exhibits a small full width at half maximum (FWHM) with the various temperature, indicating reduced interface roughness and excellent crystal quality. An increase in GIT may be suitable for optimizing the optical properties of GaAsP/InAlGaAs QW. Full article

Beta-phase gallium oxide (β-Ga₂O₃) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of β-Ga₂O₃ include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of β-Ga₂O₃ through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga₂O₃ growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga₂O₃ thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics. Full article

This study presents the structure and optoelectronic properties of a perovskite-like (PEA)₂PbBr₃Cl material on an AlN/sapphire substrate heterostructure prepared using spin coating. The AlN/sapphire substrate comprised a 2 μm thick AlN epilayer on a sapphire wafer deposited via metal–organic chemical vapor deposition (MOCVD). The peak position of (PEA)₂PbBr₃Cl photoluminescence (PL) on the AlN/sapphire substrate heterostructure was 372 nm. The emission wavelength ranges of traditional lead halide perovskite light-emitting diodes are typically 410 to 780 nm, corresponding to the range of purple to deep red as the ratio of halide in the perovskite material changes. This indicates the potential for application as a UV perovskite light-emitting diode. In this study, we investigated the contact characteristics between Ag metal and the (PEA)₂PbBr₃Cl layer on an AlN/sapphire substrate heterostructure, which improved after annealing in an air environment due to the tunneling effect of the thermionic-field emission (TFE) mechanism. Full article

Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n⁺-P⁺-π-N⁺ photodiode structure was grown by following the metal–organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N⁺ interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (V_Hg). Numerical calculations applied to the experimental data showed that this V_Hg hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of σ_p = 10⁻¹⁶–4 × 10⁻¹⁵ cm² and the trap concentration of N_T = 3–4 × 10¹⁴ cm⁻³. PL measurements confirmed that the trap lies approximately 83–89 meV above the valence band edge and its location. Full article

This article describes the synthesis of hydroxyapatite (HAp) flakes through a microwave-assisted hydrothermal method. These flakes suggest possible applications as a substrate for depositing titanium dioxide (TiO₂) films using chemical vapor deposition with metal–organic precursors (MOCVD). The results reveal the formation of crystalline hydroxyapatite characterized by a uniform morphology. Additionally, we demonstrated the successful deposition of TiO₂ coatings on the hydroxyapatite flakes, resulting in a distinctive faceted prism morphology. Our findings affirm the effective synthesis of the HAp/TiO₂ composite material. To further explore the material’s practical applications, we recommend assessing the photocatalytic activity of these composite membranes in future research. Full article

HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material. However, the relatively low (350 °C) IMP MOCVD growth temperature may result in significant residual compositional inhomogeneities. In this work, we have investigated the residual inhomogeneities in the IMP-grown HgCdTe layers and their influence on material properties. Significant IMP growth-related oscillations of composition have been revealed in as-grown epilayers with the use of a high-resolution Secondary Ion Mass Spectroscopy (SIMS). The oscillations can be minimized with post-growth annealing of the layers at a temperature exceeding that of growth. The electric and photoelectric characterizations showed a significant reduction in the background doping and an increase in the recombination time, which resulted in dramatic improvement of the spectral responsivity of photoconductors. Full article