Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

Search Results (66)

Search Parameters:
Keywords = laser-induced voltage

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
14 pages, 4632 KiB  
Article
Resistive Heater Element Based on a Conductive Line in AlN Ceramic Fabricated by Laser Processing
by Nikolay Nedyalkov, Nadya Stankova, Fatme Padikova, Stefan Valkov, Genoveva Atanasova, Tina Dilova and Lyubomir Aleksandrov
Materials 2025, 18(12), 2861; https://doi.org/10.3390/ma18122861 - 17 Jun 2025
Viewed by 377
Abstract
The purpose of this work is to demonstrate that laser-induced conductive tracts in AlN ceramic can be applied for fabrication of an integrated resistive heating element. Nanosecond laser processing at a wavelength of 1064 nm of ceramic in vacuum is used for a [...] Read more.
The purpose of this work is to demonstrate that laser-induced conductive tracts in AlN ceramic can be applied for fabrication of an integrated resistive heating element. Nanosecond laser processing at a wavelength of 1064 nm of ceramic in vacuum is used for a formation of conductive areas. It is demonstrated that the applied laser fluence and the number of pulses influence strongly the electrical properties of the material in the irradiated zone. The resistance value of the produced tracks with a length of about 4 mm and width of about 1 mm may vary from 17 to about 2000 Ohms, depending on the processing conditions. The material in the processed zone is characterized by means of surface composition, morphology, and electric properties. It is found that the electrical conductivity of the formed structure is based on the ceramic decomposition and formation of aluminum layer. The analysis of the influence of the temperature on the electrical resistance value shows that the material’s conductivity could be preserved after annealing, as in the present study it is confirmed up to 300 °C. The ability of the formed tracks to serve as a basis element of ceramic integrated resistive heater is studied by applying DC voltage. It is found that the fabricated element can be used with a high reliability to about 90 °C without special requirements for contact design and encapsulation. Operation at higher temperatures is also demonstrated as the maximal one achieved is about 150 °C at 10V. The performance of the heater is investigated and discussed as the operation range is defined. The proposed element can be a basis for a design of an integrated heater in ceramic with high stability and applications in everyday life and research. Full article
(This article belongs to the Special Issue Advances in Laser Processing Technology of Materials—Second Edition)
Show Figures

Figure 1

14 pages, 2422 KiB  
Article
Fabrication of Thylakoid Membrane-Based Photo-Bioelectrochemical Bioanode for Self-Powered Light-Driven Electronics
by Amit Sarode and Gymama Slaughter
Energies 2025, 18(12), 3167; https://doi.org/10.3390/en18123167 - 16 Jun 2025
Cited by 1 | Viewed by 565
Abstract
The transition toward sustainable and decentralized energy solutions necessitates the development of innovative bioelectronic systems capable of harvesting and converting renewable energy. Here, we present a novel photo-bioelectrochemical fuel cell architecture based on a biohybrid anode integrating laser-induced graphene (LIG), poly(3,4-ethylenedioxythiophene) (PEDOT), and [...] Read more.
The transition toward sustainable and decentralized energy solutions necessitates the development of innovative bioelectronic systems capable of harvesting and converting renewable energy. Here, we present a novel photo-bioelectrochemical fuel cell architecture based on a biohybrid anode integrating laser-induced graphene (LIG), poly(3,4-ethylenedioxythiophene) (PEDOT), and isolated thylakoid membranes. LIG provided a porous, conductive scaffold, while PEDOT enhanced electrode compatibility, electrical conductivity, and operational stability. Compared to MXene-based systems that involve complex, multi-step synthesis, PEDOT offers a cost-effective and scalable alternative for bioelectrode fabrication. Thylakoid membranes were immobilized onto the PEDOT-modified LIG surface to enable light-driven electron generation. Electrochemical characterization revealed enhanced redox activity following PEDOT modification and stable photocurrent generation under light illumination, achieving a photocurrent density of approximately 18 µA cm−2. The assembled photo-bioelectrochemical fuel cell employing a gas diffusion platinum cathode demonstrated an open-circuit voltage of 0.57 V and a peak power density of 36 µW cm−2 in 0.1 M citrate buffer (pH 5.5) under light conditions. Furthermore, the integration of a charge pump circuit successfully boosted the harvested voltage to drive a low-power light-emitting diode, showcasing the practical viability of the system. This work highlights the potential of combining biological photosystems with conductive nanomaterials for the development of self-powered, light-driven bioelectronic devices. Full article
Show Figures

Figure 1

23 pages, 4593 KiB  
Article
Laser-Induced Liquid-Phase Boron Doping of 4H-SiC
by Gunjan Kulkarni, Yahya Bougdid, Chandraika (John) Sugrim, Ranganathan Kumar and Aravinda Kar
Materials 2025, 18(12), 2758; https://doi.org/10.3390/ma18122758 - 12 Jun 2025
Viewed by 465
Abstract
4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted [...] Read more.
4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index (n) and attenuation index (k)—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of n and k values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 1019 cm−3 and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering. Full article
(This article belongs to the Special Issue Laser Technology for Materials Processing)
Show Figures

Figure 1

19 pages, 6232 KiB  
Article
Study on the Driving Performance and Influencing Factors of Multi-Electrothermal Co-Actuation Devices Considering Application Environments
by Yujuan Tang, Zihao Guo, Yujiao Ding and Xinjie Wang
Micromachines 2025, 16(6), 603; https://doi.org/10.3390/mi16060603 - 22 May 2025
Cited by 1 | Viewed by 329
Abstract
Electrothermal actuators, with their simple structure, small size, strong anti-interference ability, and easy integration, have emerged as a promising solution for micro-drive technology. However, deploying them in extreme environments, such as the fuze systems—which demand exceptional reliability under high mechanical overloads. In this [...] Read more.
Electrothermal actuators, with their simple structure, small size, strong anti-interference ability, and easy integration, have emerged as a promising solution for micro-drive technology. However, deploying them in extreme environments, such as the fuze systems—which demand exceptional reliability under high mechanical overloads. In this study, a device based on multi-electrothermal co-actuation is designed for the fuze system of loitering munition. The overall structure and work principle of the multi-electrothermal co-actuation device is discussed. Considering application environments, the effect factors of V-beam numbers, air gap, type of contact surface, external load force, periodic voltage and gas damping on the output performance of the multi-electrothermal co-actuation device are systematically addressed via simulation and experimental method. Furthermore, the high overload resistance performance of the co-actuation device applied in loitering munition is studied. The results show that the proposed multi-electrothermal co-actuation device could operate stably under a high overload (12,000 g/73.79 μs) environment, fully meeting the demanding requirements of fuze system for loitering munition. In addition, this study identifies laser processing-induced thermal gradients and mechanical stresses as critical fabrication challenges. This study provides significant insights into the design and optimization of multi-electrothermal actuation systems for next-generation fuze applications, establishing a valuable framework for future development in this field. Full article
(This article belongs to the Special Issue MEMS/NEMS Devices and Applications, 3rd Edition)
Show Figures

Figure 1

6 pages, 1393 KiB  
Article
Results from Cryo-PoF Project: Power over Fiber at Cryogenic Temperature for Fundamental and Applied Physics
by Andrea Falcone, Alessandro Andreani, Claudia Brizzolari, Esteban Javier Cristaldo Morales, Maritza Juliette Delgado Gonzales, Claudio Gotti, Massimo Lazzaroni, Luca Meazza, Gianluigi Pessina, Francesco Terranova, Marta Torti and Valeria Trabattoni
Particles 2025, 8(2), 41; https://doi.org/10.3390/particles8020041 - 8 Apr 2025
Viewed by 427
Abstract
The Cryo-PoF project is an R&D project funded by the Italian Insitute for Nuclear Research (INFN) in Milano-Bicocca (Italy). The technology at the basis of the project is Power over Fiber (PoF). By sending laser light through an optical fiber, this technology delivers [...] Read more.
The Cryo-PoF project is an R&D project funded by the Italian Insitute for Nuclear Research (INFN) in Milano-Bicocca (Italy). The technology at the basis of the project is Power over Fiber (PoF). By sending laser light through an optical fiber, this technology delivers electrical power to a photovoltaic power converter, in order to power sensors or electrical devices. Among the several advantages this solution can provide, we can underline the spark-free operation when electric fields are present, the removal of noise induced by power lines, the absence of interference with electromagnetic fields, and robustness in hostile environments. R&D for the application of PoF in cryogenic environments started at Fermilab in 2020; for the DUNE Vertical Drift detector, it was needed to operate the Photon Detector System on a high-voltage cathode surface. Cryo-PoF, starting from this project, developed a single-laser input line system to power, at cryogenic temperatures, both an electronic amplifier and Photon Detection devices, tuning their bias by means of the input laser power, without adding ancillary fibers. The results obtained in Milano-Bicocca will be discussed, presenting the tests performed using power photosensors at liquid nitrogen temperature. Full article
Show Figures

Figure 1

13 pages, 3018 KiB  
Article
Electro-Optic Fabry-Perot Etalon for Frequency Stabilization in in Single-Longitudinal Mode Nd:YVO4 Laser
by Xiaojie Chen, Renpeng Yan, Zelong Liu, Yugang Jiang, Rongwei Fan and Xudong Li
Appl. Sci. 2025, 15(7), 3813; https://doi.org/10.3390/app15073813 - 31 Mar 2025
Viewed by 641
Abstract
Single-longitudinal mode lasers are widely used as light sources in coherent lidars due to their narrow linewidth and long coherence length. However, we observed spontaneous frequency drift in a single-longitudinal mode laser, accompanied by the oscillation of a second mode, which could compromise [...] Read more.
Single-longitudinal mode lasers are widely used as light sources in coherent lidars due to their narrow linewidth and long coherence length. However, we observed spontaneous frequency drift in a single-longitudinal mode laser, accompanied by the oscillation of a second mode, which could compromise the laser’s performance. In this study, we recorded the frequency drift and the resulting power fluctuations. By analyzing the centroid positions of the laser spot, we confirmed that the drift originated from changes in the optical path length. To address this issue, we designed an electro-optic Fabry–Perot etalon. When a 400 V voltage was applied, the laser returned to single-longitudinal mode operation within 15 s. The electro-optic etalon induced an optical path variation of 0.05 μm. This work provides new insights into the application of electro-optic crystals for stabilizing laser frequencies. Full article
Show Figures

Figure 1

17 pages, 3494 KiB  
Article
Membrane-Mediated Conversion of Near-Infrared Amplitude Modulation into the Self-Mixing Signal of a Terahertz Quantum Cascade Laser
by Paolo Vezio, Andrea Ottomaniello, Leonardo Vicarelli, Mohammed Salih, Lianhe Li, Edmund Linfield, Paul Dean, Virgilio Mattoli, Alessandro Pitanti and Alessandro Tredicucci
Photonics 2025, 12(3), 273; https://doi.org/10.3390/photonics12030273 - 16 Mar 2025
Viewed by 2736
Abstract
A platform for converting near-infrared (NIR) laser power modulation into the self-mixing (SM) signal of a quantum cascade laser (QCL) operating at terahertz (THz) frequencies is introduced. This approach is based on laser feedback interferometry (LFI) with a THz QCL using a metal-coated [...] Read more.
A platform for converting near-infrared (NIR) laser power modulation into the self-mixing (SM) signal of a quantum cascade laser (QCL) operating at terahertz (THz) frequencies is introduced. This approach is based on laser feedback interferometry (LFI) with a THz QCL using a metal-coated silicon nitride trampoline membrane resonator as both the external QCL laser cavity and the mechanical coupling element of the two-laser hybrid system. We show that the membrane response can be controlled with high precision and stability both in its dynamic (i.e., piezo-electrically actuated) and static state via photothermally induced NIR laser excitation. The responsivity to nanometric external cavity variations and robustness to optical feedback of the QCL LFI apparatus allows a highly sensitive and reliable transfer of the NIR power modulation into the QCL SM voltage, with a bandwidth limited by the thermal response time of the membrane resonator. Interestingly, a dual information conversion is possible thanks to the accurate thermal tuning of the membrane resonance frequency shift and displacement. Overall, the proposed apparatus can be exploited for the precise opto-mechanical control of QCL operation with advanced applications in LFI imaging and spectroscopy and in coherent optical communication. Full article
(This article belongs to the Special Issue The Three-Decade Journey of Quantum Cascade Lasers)
Show Figures

Figure 1

11 pages, 5416 KiB  
Article
Design, Analysis, and Implementation of the Subdivision Interpolation Technique for the Grating Interferometric Micro-Displacement Sensor
by Jiuhui Tang, Haifeng Peng, Peng Yang, Shangzhou Guo, Wenqiang Sun, Li Jin, Kunyang Xie and Mengwei Li
Photonics 2025, 12(1), 64; https://doi.org/10.3390/photonics12010064 - 13 Jan 2025
Viewed by 753
Abstract
A high-resolution grating interferometric micro-displacement sensor utilizing the subdivision interpolation technique is proposed and experimentally demonstrated. As the interference laser intensity varies sinusoidally with displacement, subdivision interpolation is a promising technique to achieve micro-displacement detection with a high resolution and linearity. However, interpolation [...] Read more.
A high-resolution grating interferometric micro-displacement sensor utilizing the subdivision interpolation technique is proposed and experimentally demonstrated. As the interference laser intensity varies sinusoidally with displacement, subdivision interpolation is a promising technique to achieve micro-displacement detection with a high resolution and linearity. However, interpolation errors occur due to the phase imbalance, offset error, and amplitude mismatch between the orthogonal signals. To address these issues, a subdivision interpolation circuit, along with 90-degree phase-shifter and high-precision DC bias-voltage techniques, converts an analog sinusoidal signal into standard incremental digital signals. This novel methodology ensures that its performance is least affected by the nonidealities induced by fabrication and assembly errors. Detailed design, analysis, and experimentation studies have been conducted to validate the proposed methodology. The experimental results demonstrate that the micro-displacement sensor based on grating interferometry achieved a displacement resolution of less than 1.9 nm, an accuracy of 99.8%, and a subdivision interpolation factor of 208. This research provides a significant guide for achieving high-precision grating interferometric displacement measurements. Full article
(This article belongs to the Section Lasers, Light Sources and Sensors)
Show Figures

Figure 1

11 pages, 2574 KiB  
Article
Photo-Excited Carrier Dynamics in Ammonothermal Mn-Compensated GaN Semiconductor
by Patrik Ščajev, Paweł Prystawko, Robert Kucharski and Irmantas Kašalynas
Materials 2024, 17(23), 5995; https://doi.org/10.3390/ma17235995 - 7 Dec 2024
Viewed by 1099
Abstract
We investigated the carrier dynamics of ammonothermal Mn-compensated gallium nitride (GaN:Mn) semiconductors by using sub-bandgap and above-bandgap photo-excitation in a photoluminescence analysis and pump–probe measurements. The contactless probing methods elucidated their versatility for the complex analysis of defects in GaN:Mn crystals. The impurities [...] Read more.
We investigated the carrier dynamics of ammonothermal Mn-compensated gallium nitride (GaN:Mn) semiconductors by using sub-bandgap and above-bandgap photo-excitation in a photoluminescence analysis and pump–probe measurements. The contactless probing methods elucidated their versatility for the complex analysis of defects in GaN:Mn crystals. The impurities of Mn were found to show photoconductivity and absorption bands starting at the 700 nm wavelength threshold and a broad peak located at 800 nm. Here, we determined the impact of Mn-induced states and Mg acceptors on the relaxation rates of charge carriers in GaN:Mn based on a photoluminescence analysis and pump–probe measurements. The electrons in the conduction band tails were found to be responsible for both the photoconductivity and yellow luminescence decays. The slower red luminescence and pump–probe decays were dominated by Mg acceptors. After photo-excitation, the electrons and holes were quickly thermalized to the conduction band tails and Mg acceptors, respectively. The yellow photoluminescence decays exhibited a 1 ns decay time at low laser excitations, whereas, at the highest ones, it increased up to 7 ns due to the saturation of the nonradiative defects, resembling the photoconductivity lifetime dependence. The fast photo-carrier decay time observed in ammonothermal GaN:Mn is of critical importance in high-frequency and high-voltage device applications. Full article
(This article belongs to the Special Issue Optical Properties of Crystalline Semiconductors and Nanomaterials)
Show Figures

Figure 1

16 pages, 1242 KiB  
Article
Logic Gate Generation in a Monostable Optical System: Improving the Erbium-Doped Fiber Laser Reconfigurable Logic Operation
by Samuel Mardoqueo Afanador-Delgado, José Luis Echenausía-Monroy, Guillermo Huerta-Cuellar, Juan Hugo García-López, Erick Emiliano Lopez-Muñoz and Rider Jaimes-Reátegui
Photonics 2024, 11(12), 1103; https://doi.org/10.3390/photonics11121103 - 22 Nov 2024
Viewed by 864
Abstract
A logic gate is typically an electronic device with a Boolean or other type of function, e.g., adding or subtracting, including or excluding according to its logical properties. They can be used in electronic, electrical, mechanical, hydraulic, and pneumatic technology. This paper presents [...] Read more.
A logic gate is typically an electronic device with a Boolean or other type of function, e.g., adding or subtracting, including or excluding according to its logical properties. They can be used in electronic, electrical, mechanical, hydraulic, and pneumatic technology. This paper presents a new method for generating logic gates based on optical systems with an emission frequency equal to that used in current telecommunications systems. It uses an erbium-doped fiber laser in its monostable operating region, in contrast to most results published in the literature, where multistable behavior is required to induce dynamic changes, and where a DC voltage signal in the laser pump current provides the control between obtaining the different logic operations. The proposed methodology facilitates the generation of the gates, since it does not require taking the optical system to critical power levels that could damage the components. It is based on using the same elements that the EDFL requires to operate. The result is a system capable of generating up to five stable and robust logic gates to disturbances validated in numerical simulation and experimental setup. This eliminates the sensitivity to the initial conditions affecting the possible logic gates generated by the system and the need to add noise to the system (as is performed in works based on stochastic logic resonance). The experimental observations confirm the numerical results and open up new aspects of using chaotic systems to generate optical logic gates without bistable states. Full article
Show Figures

Figure 1

13 pages, 3209 KiB  
Article
Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices
by Heeyoon Jang, Seok-Ki Hyeong, Byeongjin Park, Tae-Wook Kim, Sukang Bae, Sung Kyu Jang, Yonghun Kim and Seoung-Ki Lee
Nanomaterials 2024, 14(23), 1872; https://doi.org/10.3390/nano14231872 - 22 Nov 2024
Viewed by 1284
Abstract
Strain engineering provides an attractive approach to enhance device performance by modulating the intrinsic electrical properties of materials. This is especially applicable to 2D materials, which exhibit high sensitivity to mechanical stress. However, conventional methods, such as using polymer substrates, to apply strain [...] Read more.
Strain engineering provides an attractive approach to enhance device performance by modulating the intrinsic electrical properties of materials. This is especially applicable to 2D materials, which exhibit high sensitivity to mechanical stress. However, conventional methods, such as using polymer substrates, to apply strain have limitations in that the strain is temporary and global. Here, we introduce a novel approach to induce permanent localized strain by fabricating a stressor on SiO2/Si substrates using fiber laser irradiation, thereby enabling precise control of the surface topography. MoS2 is transferred onto this stressor, which results in the application of ~0.8% tensile strain. To assess the impact of the internal strain on the operation of ReRAM devices, the flat-MoS2-based and the strained-MoS2-based devices are compared. Both devices demonstrate forming-free, bipolar, and non-volatile switching characteristics. The strained devices exhibit a 30% reduction in the operating voltage, which can be attributed to bandgap narrowing and enhanced carrier mobility. Furthermore, the strained devices exhibit nearly a two-fold improvement in endurance, presumably because of the enhanced stability from lattice release effect. These results emphasize the potential of strain engineering for advancing the performance and durability of next-generation memory devices. Full article
(This article belongs to the Special Issue Nanoelectronics: Materials, Devices and Applications (Second Edition))
Show Figures

Figure 1

10 pages, 2620 KiB  
Article
Laser-Assisted Photo-Thermal Reaction for Ultrafast Synthesis of Single-Walled Carbon Nanotube/Copper Nanoparticles Hybrid Films as Flexible Electrodes
by Mi-Jeong Kim and Hee Jin Jeong
Nanomaterials 2024, 14(17), 1454; https://doi.org/10.3390/nano14171454 - 6 Sep 2024
Cited by 1 | Viewed by 1563
Abstract
The hybridization of single-walled carbon nanotubes (SWCNTs) and Cu nanoparticles offers a promising strategy for creating highly conductive and mechanically stable fillers for flexible printed electronics. In this study, we report the ultrafast synthesis of SWCNT/Cu hybrid nanostructures and the fabrication of flexible [...] Read more.
The hybridization of single-walled carbon nanotubes (SWCNTs) and Cu nanoparticles offers a promising strategy for creating highly conductive and mechanically stable fillers for flexible printed electronics. In this study, we report the ultrafast synthesis of SWCNT/Cu hybrid nanostructures and the fabrication of flexible electrodes under ambient conditions through a laser-induced photo-thermal reaction. Thermal energy generated from the nonradiative relaxation of the π-plasmon resonance of SWCNTs was utilized to reduce the Cu-complex (known as a metal–organic decomposition ink) into Cu nanoparticles. We systematically investigated the effects of SWCNT concentration and output laser power on the structural and electrical properties of the SWCNT/Cu hybrid electrodes. The SWCNT/Cu electrodes achieved a minimum electrical resistivity of 46 μohm·cm, comparable to that of the metal-based printed electrodes. Mechanical bending tests demonstrated that the SWCNT/Cu electrodes were highly stable and durable, with no significant deformation observed even after 1000 bending cycles. Additionally, the electrodes showed rapid temperature increases and stable Joule heating performance, reaching temperatures of nearly 80 °C at an applied voltage of less than 3.5 V. Full article
(This article belongs to the Section 2D and Carbon Nanomaterials)
Show Figures

Figure 1

9 pages, 5149 KiB  
Article
Some Aspects of Hot Carrier Photocurrent across GaAs p-n Junction
by Steponas Ašmontas, Oleksandr Masalskyi, Ihor Zharchenko, Algirdas Sužiedėlis and Jonas Gradauskas
Inorganics 2024, 12(6), 174; https://doi.org/10.3390/inorganics12060174 - 20 Jun 2024
Cited by 1 | Viewed by 1463
Abstract
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do [...] Read more.
The photocurrent across crystalline GaAs p-n junction induced by Nd:YAG laser radiation was investigated experimentally. It is established that the displacement current is dominant at reverse and low forward bias voltages in the case of pulsed excitation. This indicates that hot carriers do not have enough energy to overcome the p-n junction until the forward bias significantly reduces the potential barrier. At a sufficiently high forward bias, the photocurrent is determined by the diffusion of hot carriers across the p-n junction. The current–voltage (I-V) characteristics measured at different crystal lattice temperatures show that the heating of carriers by laser radiation increases with a drop in crystal lattice temperature. This study proposes a novel model for evaluating carrier temperature based on the temperature coefficient of the I-V characteristic. It is demonstrated that the heating of carriers by light diminishes the conversion efficiency of a solar cell, not only through thermalisation but also because of the conflicting interactions between the hot carrier and conventional photocurrents, which exhibit opposite polarities. These findings contribute to an understanding of hot carrier phenomena in photovoltaic devices and may prompt a revision of the intrinsic losses in solar cells. Full article
(This article belongs to the Special Issue Optical and Quantum Electronics: Physics and Materials)
Show Figures

Figure 1

12 pages, 3920 KiB  
Article
Recovery of Metal Ions (Cd2+, Co2+, and Ni2+) from Nitrate and Sulfate on Laser-Induced Graphene Film Using Applied Voltage and Its Application
by Xiu-man Wang, Tong Su and Yujun Chai
Materials 2024, 17(12), 2965; https://doi.org/10.3390/ma17122965 - 17 Jun 2024
Viewed by 1150
Abstract
The urgent removal of Cd, Co, and Ni from nitrate and sulfate is essential to mitigate the potential risk of chemical pollution from large volumes of industrial wastewater. In this study, these metal ions were rapidly recovered through applying voltage on nitrate and [...] Read more.
The urgent removal of Cd, Co, and Ni from nitrate and sulfate is essential to mitigate the potential risk of chemical pollution from large volumes of industrial wastewater. In this study, these metal ions were rapidly recovered through applying voltage on nitrate and sulfate, utilizing laser-induced graphene/polyimide (LIG/PI) film as the electrode. Following the application of external voltage, both the pH value and conductivity of the solution undergo changes. Compared to Co2+ and Ni2+, Cd2+ exhibits a lower standard electrode potential and stronger reducibility. Consequently, in both nitrate and sulfate solutions, the reaction sequence follows the order of Cd2+ > Co2+ > Ni2+, with the corresponding electrode adsorption quantities in the order of Cd2+ > Co2+ ~ Ni2+. Additionally, using the recovered Co(OH)2 as the raw material, a LiCoO2 composite was prepared. The assembled battery with this composite exhibited a specific capacity of 122.8 mAh g−1, meeting practical application requirements. This research has significance for fostering green development. Full article
(This article belongs to the Special Issue Electrochemical Material Science and Electrode Processes)
Show Figures

Figure 1

19 pages, 8307 KiB  
Article
Laser-Induced Breakdown Spectroscopy Analysis of Sheet Molding Compound Materials
by Hua Shen, Honglin Jian, Haohan Zhen, Lei Yu, Haibin Chen, Tao Tong, Xuhui Cui and Xilin Wang
Energies 2024, 17(12), 2964; https://doi.org/10.3390/en17122964 - 17 Jun 2024
Cited by 2 | Viewed by 1340
Abstract
Sheet Molding Compound (SMC) materials are extensively utilized as high-voltage insulation materials in electrical equipment. SMC materials are prone to aging after long-term operation. Conducting non-destructive testing to assess their electrical and physicochemical properties is crucial for the safe operation of electrical equipment. [...] Read more.
Sheet Molding Compound (SMC) materials are extensively utilized as high-voltage insulation materials in electrical equipment. SMC materials are prone to aging after long-term operation. Conducting non-destructive testing to assess their electrical and physicochemical properties is crucial for the safe operation of electrical equipment. This study identifies the optimal equipment parameters for testing SMC materials using Laser-Induced Breakdown Spectroscopy (LIBS) technology through experimental investigation and also explores the ablation characteristics of SMC under various laser parameters. The results indicate a significant positive correlation between the ablation depth and laser pulse number, while there is no correlation with single laser pulse energy. However, the ablation area demonstrates a strong positive correlation with both single laser pulse energy and laser pulse number. Additionally, LIBS spectral analysis provides elemental results comparable to Energy Dispersive Spectroscopy (EDS), facilitating the examination of variations in Na, Ti, Fe, Mg, Ca, and C elemental contents with depth. Moreover, an enhanced iterative Boltzmann plot method is suggested for calculating the plasma temperature using 21 Fe I spectral lines and the electron density using the Fe II 422.608 nm line. The variations of these plasma parameters with laser pulse number are documented, and the results show consistent trends, confirming that the laser-induced SMC plasma adheres to local thermodynamic equilibrium. Full article
Show Figures

Figure 1

Back to TopTop