Search Results (87)

We present a monolithically integrated wavelength meter fabricated on an indium phosphide (InP) platform, suitable for seamless integration with active photonic components such as lasers and optical amplifiers. The device architecture incorporates multiple ring resonators and was realized through a commercial multi-project wafer (MPW) process. Experimental characterization over a 1 nm spectral window using a tunable laser demonstrates the feasibility of the approach and validates the operating principle. Full article

Electro-optic frequency combs (EOFCs), generated through the microwave-driven modulation of continuous-wave lasers, have emerged as a highly reconfigurable and system-compatible class of optical frequency combs with growing importance in microwave photonics, coherent communications, spectroscopy, and precision metrology. In contrast to mode-locked lasers and Kerr microresonator combs, EOFCs offer electrically programmable repetition rates, deterministic phase coherence, and intrinsic compatibility with radiofrequency electronic systems, making them particularly attractive for integrated and application-oriented implementations. As EOFCs evolve toward broader bandwidths, lower power consumption, and full on-chip integration, their achievable performance is increasingly constrained by the interplay between electro-optic physical mechanisms, modulator architectures, and material platform properties. This review establishes a unified analytical framework that systematically connects EOFC generation mechanisms, device configurations, key performance metrics, and platform-level limitations. We first summarize the fundamental electro-optic effects underpinning EOFC generation and analytically examine representative modulator architectures, including phase modulators, Mach–Zehnder modulators, and microresonator-based schemes, to clarify their respective comb-generation characteristics. Key performance determinants, such as modulation depth, bandwidth, electro-optic efficiency, and optical loss, are then discussed to elucidate their coupled influence on comb-line count, spectral flatness, output power, and phase noise. Subsequently, the performance of EOFCs implemented on major integrated platforms, including Silicon on Insulator (SOI), Indium Phosphide on Insulator (InPOI), Lithium Niobate on Insulator (LNOI), and Lithium Tantalate on Insulator (LTOI), is comparatively reviewed to highlight the material-dependent advantages and constraints. Finally, emerging directions based on heterogeneous integration and ferroelectric materials with ultrahigh electro-optic coefficients are discussed as promising pathways to overcome the current performance bottlenecks. This review provides clear physical insights and engineering guidance for the future development of high-performance, integrated EOFC systems. Full article

This paper provides a comprehensive overview of the progress in fiber-optic gyroscope technology, covering 260 key studies of the last ten years. A critical comparative analysis of fiber-optic gyroscope with alternative inertial sensors (Micro-Electro-Mechanical Systems, Hemispherical Resonator Gyroscope, Ring Laser Gyroscope) has been carried out. Confirming the unique advantages of fiber-optic gyroscope for autonomous navigation. Fundamental limitations of accuracy are considered in detail: temperature drifts, polarization noise, and Rayleigh backscattering. Modern hardware methods for suppressing these errors, including the use of photonic crystal and hollow fibers (Air-Core/Hollow-Core), are also considered in this work. The central place in the review is occupied by the analysis of the technological paradigm shift from bulky discrete circuits to hybrid integrated photonics (Indium Phosphide, Silicon Nitride, Lithium Niobate) and hybrid architectures to reduce weight and size characteristics. The role of artificial intelligence (Deep Learning, Long Short-Term Memory) methods in nonlinear drift compensation and calibration is discussed. The usage of the Brillouin effect and optomechanics promising areas are outlined, necessary to create a new generation of navigation systems operating in the absence of Global Navigation Satellite Systems signals. Full article

Red- and near-infrared (NIR)-emissive quantum dots (QDs) hold great promise in optoelectronic devices, sensors, and biomedicine owing to their advantages of low optical scattering, deep-tissue penetration, and compatibility with advanced photonic technologies. However, the toxicity of conventional cadmium (Cd)- and lead (Pb)-based QDs has led to growing demand for eco-friendly alternatives. Here, we provide a comprehensive review of sustainable classes of red/NIR-emissive QDs, including indium phosphide (InP), I-III-VI chalcogenides (CuInS₂, AgInSe, and so on), group-IV (Si, Ge, and SiGe) nanocrystals, and carbon-based QDs (graphene QDs or carbon dots). InP QDs are leading candidates for display technologies due to their high efficiencies and narrow bandwidths in emission properties, enabled by advanced core/shell engineering. In contrast, I-III-VI chalcogenides, group-IV, and carbon-based QDs offer advantages for biocompatible NIR bioimaging, photothermal therapy, and silicon photonics integration. We discuss synthesis strategies for achieving long-wavelength emission, the mechanisms of red/NIR photoluminescence (PL), and representative applications in displays, sensors, and bioimaging. Finally, we outline the remaining challenges, such as large-scale manufacturing and long-term stability, which should be addressed for commercial and clinical viability. Full article

This work presents the fabrication and characterization of a bow-tie antenna integrated uni-traveling carrier photodiode (UTC-PD) on a silicon carbide (SiC) substrate for efficient terahertz (THz) wave generation. The proposed device exploits the superior thermal conductivity and mechanical robustness of SiC to overcome the self-heating limitations associated with conventional indium phosphide (InP)-based photodiodes. An epitaxial layer transfer technique was utilized to bond InP/InGaAs UTC-PD structures onto SiC. The study systematically examines the influence of critical geometric parameters, specifically the mesa diameter and length between the antenna arms, on the emitted THz intensity in the 300 GHz frequency band. Experimental results show that the THz radiation efficiency is primarily governed by the mesa diameter, reflecting the trade-off between light absorption, device capacitance, and bandwidth, while the length between the antenna arms exhibits only a weak influence within the investigated parameter range. The fabricated device demonstrates strong linearity between photocurrent and THz output power up to 7.5 mA, after which saturation occurs due to space-charge effects. This work provides crucial insights for optimizing SiC-based bow-tie antenna integrated UTC-PD devices to realize robust, high-power THz sources vital for future high-data-rate wireless communication systems such as beyond 5G and 6G networks. Full article

At a 1550 nm wavelength, the optical sensitivity of conventional indium gallium arsenide (InGaAs)-based avalanche photodiodes (APDs) is restricted by their high excess noise, hindering their performance in long-range free-space optical communication links. Al_0.85Ga_0.15As_0.56Sb_0.44 (AlGaAsSb), lattice-matched to indium phosphide (InP) substrates, has a much lower excess noise factor than InP, the conventional avalanche material. In this work, we evaluated the performance of optical APD-TIA receivers utilizing InGaAs/AlGaAsSb APDs through simulations and experiments. Simulations confirmed their optimum gain is much higher than conventional APDs. InGaAs/AlGaAsSb APD dies and transimpedance amplifier (TIA) chips were integrated, yielding four optical receivers for experimental evaluation. At 2.5 Gb/s and BER = 10⁻⁹, these receivers operated at a high optimal gain of 56 (as predicted in simulations) and produced a mean sensitivity of −38.5 dBm, with the best sensitivity at −39.2 dBm. These sensitivity values are at least 2.7 (or, in the best case, 3.4) dB better than those of typical commercial receivers with InGaAs APDs. This work quantifies the significant performance improvement that InGaAs/AlGaAsSb APDs provide to long-range free-space optical communication links. Full article

Indium phosphide (InP) is a promising photoactive material for solar-driven hydrogen production owing to its optimal bandgap, high carrier mobility, and broad solar absorption. However, conventional InP fabrication relies on costly wafers and toxic precursors, limiting its scalability and sustainability. Here, we demonstrate a simple and environmentally friendly route to synthesize n-type InP thin-film photoanodes by phosphidating indium films prepared via doctor blade coating on ITO substrates, using NaH₂PO₂ as a phosphorus source. Structural and spectroscopic analyses (XRD, Raman, XPS, PL) confirmed the successful formation of crystalline InP with optimum quality at 425 °C. Photoelectrochemical measurements revealed a significant photocurrent density of 1.8 mA·cm⁻² under AM 1.5 illumination, with extended photoresponse into the near-infrared region. Mott–Schottky and EIS analyses indicated efficient charge separation, low transfer resistance, and unintentional n-type doping due to Sn diffusion from the ITO substrate. This facile and green synthesis route not only provides a scalable approach to III–V semiconductors but also highlights InP thin films as cost-effective and efficient photoanodes for sustainable solar hydrogen generation. Full article

Reliable power generation from solar cells is critical for spacecraft operation. High-energy laser irradiation poses a significant threat, as it can potentially cause irreversible damage to solar cells, which is difficult to detect remotely using conventional techniques such as radar or optical imaging. Spectral detection offers a potential approach through unique “spectral fingerprints,” but the spectral characteristics of laser-damaged solar cells remain insufficiently documented. This study investigates the scattering spectral characteristics of triple-junction GaAs (Gallium Arsenide) solar cells subjected to nanosecond pulsed laser irradiation to establish spectral signatures for damage assessment. GaAs solar cells were irradiated at varying energy densities. Bidirectional Reflectance Distribution Function (BRDF) spectra (400–1200 nm) were measured. A thin-film interference model was used to simulate damage effects by varying layer thicknesses, thereby interpreting experimental results. The results demonstrate that as the laser energy density increases from 0.12 to 2.96 J/cm², the number of absorption peaks in the visible range (400–750 nm) decreases from three to zero, and the oscillation in the near-infrared range vanishes completely, indicating progressive damage to the GaInP (Gallium Indium Phosphide) and GaAs layers. This study provides a spectral-based approach for remote assessment of laser-induced damage to solar cells, which is crucial for satellite health monitoring. Full article

We demonstrate that selective electrochemical etching is a reliable method for detecting and observing the uneven concentration distribution of impurities in indium phosphide crystals, which accompanies the growth of highly doped crystals using the Czochralski method. Even though selective electrochemical etching, as a method of detecting defects in the crystal lattice, has been discussed many times in the literature, it has not yet been described for indium phosphide. In this work, we investigated etching in compositions of various selective electrolytes for InP of n- and p-type conductivity with different surface orientations. We present in detail the features of detecting the striped inhomogeneity of impurity distribution. The mechanisms and peculiarities of the formation of oxide crystallites on the surface of InP during electrochemical processing are presented, including structures like flower-like and parquet crystallites. The formation of porous surfaces, terraces, tracks, and crystallites is explained from the perspective of the defect-dislocation mechanism. Full article

In this work, we present a wideband on-wafer characterization technique for InAlAs/InGaAs/InAs InP-based high-electron mobility transistors (HEMTs) using an optimized multiline Thru-Reflect-Line (mTRL) calibration kit. Our goal is to directly extract transition frequency f_T and maximum frequency of oscillation f_max values from S-parameters measurements with frequencies up to 1.1 THz and overcome the limitations of the traditional 20 dB/dec extrapolation method using lower-frequency band measurements. Indeed, as the state-of-the-art transistors now exhibit cutoff frequencies exceeding 1 THz, standard low-frequency extrapolation methods become increasingly inaccurate. Full-wave electromagnetic simulations were used to design low-loss coplanar waveguide (CPW) access structures with stable impedance and minimal parasitic effects. These structures were co-fabricated with HEMTs and calibration standards on the same InP substrate. The 2-finger transistor with a 80 nm gate length exhibits a directly measured f_T = 320 GHz and f_max = 800 GHz. The technique showed high consistency across six frequency bands and confirms that direct broadband measurement with mTRL improves accuracy. This work highlights the metrological strength of mTRL-based setups for next-generation THz device characterization. Full article

A hierarchical photoanode composed of amorphous indium phosphate (InPO_x)-coated titanium dioxide nanowires (TiO₂ NWs) was successfully fabricated via a hydrothermal method followed by dip-coating and thermal phosphidation. Structural characterization revealed the formation of a uniform InPO_x shell on the surface of vertically aligned TiO₂ NWs, without altering their 1D morphology. X-ray photoelectron spectroscopy confirmed the incorporation of phosphate species and the presence of oxygen vacancies, which contribute to enhanced interfacial charge dynamics. Photoelectrochemical (PEC) measurements demonstrated that the InPO_x/TiO₂ NWs significantly improved photocurrent density, with the 0.1 M InCl₃-derived sample achieving 0.36 mA·cm⁻² at 1.0 V—an enhancement of approximately 928% over pristine TiO₂. This enhancement is attributed to improved charge separation and injection efficiency (91%), as well as reduced interfacial resistance verified by electrochemical impedance spectroscopy. Moreover, the Mott–Schottky analysis indicated a four-order increase in carrier density due to the InPO_x shell. The modified electrode also exhibited superior stability under continuous illumination for 3 h. These findings highlight the potential of amorphous InPO_x as an effective cocatalyst for constructing efficient and durable TiO₂-based photoanodes for solar-driven water-splitting applications. Full article

The fast-maturing photonic integration technology is calling for a versatile platform that supports both active and passive functions as well as high scalability through component miniaturization. Indium phosphide (InP) has long been recognized for its ability to deliver a comprehensive suite of photonic components. InP membrane technology has emerged as a next-generation solution that could unite the functional completeness with high scalability. This paper describes recent advancements in the InP-membrane-on-Si (IMOS) platform, which supports high-performance passives, polarization and mode handling, native light sources, amplifiers, modulators and detectors, and novel material integration. Full article

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages hybrid integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si₃N₄) low-loss waveguides, and high-efficient thermal-optical tunable polymers with micro-optical functions to achieve fully integrated wireless transceivers. Key contributions include (1) On-chip optical injection locking for generating phase-locked optical beat notes at 45 GHz, enabled by cascaded InP phase modulators and hybrid InP/polymer tunable lasers with a 3.8 GHz locking range. (2) Waveguide-integrated THz emitters and receivers, featuring photoconductive antennas (PCAs) with a 22× improved photoresponse compared to top-illuminated designs, alongside scalable 1 × 4 PIN-PD and PCA arrays for enhanced power and directivity. (3) Beam steering at 300 GHz using a polymer-based optical phased array (OPA) integrated with an InP antenna array, achieving continuous steering across 20° and a 10.6 dB increase in output power. (4) Demonstration of fully integrated hybrid wireless transceiver PICs combining InP, Si₃N₄, and polymer material platforms, validated through key component characterization, on-chip optical frequency comb generation, and coherent beat note generation at 45 GHz. These advancements result in compact form factors, reduced power consumption, and enhanced scalability, positioning PICs as an enabling technology for future high-speed wireless networks. Full article

In this paper, we present recent advancements in transmitter and receiver technologies for Optical Wireless Communication (OWC). OWC offers very wide license-free optical spectrum which enables very high capacity transmission. Additionally, beam-steered OWC is more power-efficient and more secure due to low divergence of light. One of the main challenges of OWC is wide angle transmission and reception because law of conservation of etendue restricts maximization of both aperture and field of view (FoV). On the transmitter side, we use Micro Electro-Mechanical System cantilevers activated by piezoelectric actuators together with silicon micro-lenses for narrow laser beam steering. Such design allowed us to experimentally demonstrate at least 10 Gbps transmission over 100° full angle FoV. On the receiver side, we show the use of photodiode array, and Indium-Phosphide Membrane on Silicon (IMOS) Photonic Integrated Circuit (PIC) with surface grating coupler (SGC) and array of SGC. We demonstrate FoV greater than 32° and 16 Gbps reception with photodiode array. PIC receiver allowed to receive 100 Gbps WDM with single SGC, and 10 Gbps with an array of SGC which had 8° FoV in the vertical angle and full FoV in the horizontal angle. Our results suggest that solutions presented here are scalable in throughputs and can be adopted for future indoor high-capacity OWC systems. Full article

Indium phosphide (InP) semiconductor technology is being explored for radiofrequency (RF) applications, targeting frequencies exceeding 100 GHz, to support the next generation of 6G communication systems. When taking into account sustainability in designing this future generation, growing concerns are emerging regarding the environmental impact of communication networks and the reliance on raw materials for the production of Information and Communication Technologies (ICTs). The extraction, processing, and manufacturing of such materials and semiconductor technologies result in environmental impacts, but these impacts remain insufficiently documented. Firstly, this study evaluates the environmental impacts of manufacturing indium phosphide (InP) wafers based on industrial data and those of InP-based heterojunction bipolar transistors (HBTs) based on early-stage research data. Secondly, this study attempts to highlight the challenges posed by the increasing demand for high-tech solutions, involving raw materials, by evaluating the potential demand for indium for RF 6G applications, with a deployment scenario. Full article