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Volume 14
Issue 17
10.3390/electronics14173472
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz

by
Rita Younes
*,
Mahmoud Abou Daher
,
Mohammed Samnouni
,
Sylvie Lepilliet
,
Guillaume Ducournau
,
Nicolas Wichmann
and
Sylvain Bollaert
Université de Lille—Faculté des Sciences et Technologies, Centre National de la Recherche Scientifique (CNRS), Université Polytechnique Hauts-de-France, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(17), 3472; https://doi.org/10.3390/electronics14173472
Submission received: 25 July 2025 / Revised: 23 August 2025 / Accepted: 29 August 2025 / Published: 29 August 2025
(This article belongs to the Section Electronic Materials, Devices and Applications)
Versions Notes

Abstract

In this work, we present a wideband on-wafer characterization technique for InAlAs/InGaAs/InAs InP-based high-electron mobility transistors (HEMTs) using an optimized multiline Thru-Reflect-Line (mTRL) calibration kit. Our goal is to directly extract transition frequency fT and maximum frequency of oscillation fmax values from S-parameters measurements with frequencies up to 1.1 THz and overcome the limitations of the traditional 20 dB/dec extrapolation method using lower-frequency band measurements. Indeed, as the state-of-the-art transistors now exhibit cutoff frequencies exceeding 1 THz, standard low-frequency extrapolation methods become increasingly inaccurate. Full-wave electromagnetic simulations were used to design low-loss coplanar waveguide (CPW) access structures with stable impedance and minimal parasitic effects. These structures were co-fabricated with HEMTs and calibration standards on the same InP substrate. The 2-finger transistor with a 80 nm gate length exhibits a directly measured fT = 320 GHz and fmax = 800 GHz. The technique showed high consistency across six frequency bands and confirms that direct broadband measurement with mTRL improves accuracy. This work highlights the metrological strength of mTRL-based setups for next-generation THz device characterization.
Keywords: coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); terahertz; millimeter-wave; multiline thru-reflect-line; on-wafer measurement; S-parameters; terahertz; maximum frequency of oscillation coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); terahertz; millimeter-wave; multiline thru-reflect-line; on-wafer measurement; S-parameters; terahertz; maximum frequency of oscillation

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MDPI and ACS Style

Younes, R.; Abou Daher, M.; Samnouni, M.; Lepilliet, S.; Ducournau, G.; Wichmann, N.; Bollaert, S. Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz. Electronics 2025, 14, 3472. https://doi.org/10.3390/electronics14173472

AMA Style

Younes R, Abou Daher M, Samnouni M, Lepilliet S, Ducournau G, Wichmann N, Bollaert S. Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz. Electronics. 2025; 14(17):3472. https://doi.org/10.3390/electronics14173472

Chicago/Turabian Style

Younes, Rita, Mahmoud Abou Daher, Mohammed Samnouni, Sylvie Lepilliet, Guillaume Ducournau, Nicolas Wichmann, and Sylvain Bollaert. 2025. "Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz" Electronics 14, no. 17: 3472. https://doi.org/10.3390/electronics14173472

APA Style

Younes, R., Abou Daher, M., Samnouni, M., Lepilliet, S., Ducournau, G., Wichmann, N., & Bollaert, S. (2025). Development of an Extended-Band mTRL Calibration Kit for On-Wafer Characterization of InP-HEMTs up to 1.1 THz. Electronics, 14(17), 3472. https://doi.org/10.3390/electronics14173472

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