Search Results (404)

This work presents the design of a novel electrochemical sensor for highly sensitive determination of LEV, utilizing a sensing platform based on a newly synthesized, high-purity manganese (III) porphyrin complex [5,10,15,20-tetrayltetrakis(2-methoxybenzene-4,1-diyl) tetraisonicotinateporphyrinato] manganese (III) porphyrin (MnTMIPP). The successful synthesis of the MnTMIPP complex was verified using ultraviolet–visible (UV–Vis) and infrared spectroscopy (IR). The sensing electrode was fabricated by depositing the synthesized material onto an indium tin oxide (ITO) electrode via a drop-coating method. Under optimized experimental conditions, the proposed sensor demonstrated a wide dynamic range, from 10⁻⁹ M to 10⁻³ M, with a low calculated detection limit of 4.82 × 10⁻¹⁰ M. Furthermore, the MnTMIPP/ITO electrode displayed interesting metrological performance: high selectivity, reproducibility, and stability. Successful application in spiked river water and saliva samples with satisfactory recovery rates confirms the sensor’s potential as a reliable and cost-effective platform for monitoring LEV in real-world environments. Full article

Transparent conductive films based on silver nanowire meshes have demonstrated significant potential as alternatives to conventional tin-doped indium oxide and fluorine-doped tin oxide thin films. However, these materials feature high junction resistance, poor damp heat (DH) stability, and weak mechanical adhesion to substrates, which are critical issues that must be addressed before any practical applications. In this paper, transparent conducting films composed of silver nanowire (AgNW) frameworks and amorphous indium zinc oxide (IZO) fillers were prepared by a spin-coating method. The AgNW-IZO composite films exhibited a higher conductivity and better DH stability and adhesion to substrates than that of their constituent parts alone. The lowest sheet resistance of the composite films was 3.3 ohm/sq with approximately 70% transparency in the visible spectrum. No degradation was observed after 8 months. The excellent DH stability and mechanical adhesion might facilitate applications of these AgNW-IZO composite films in optoelectronic devices. Furthermore, the composite electrode is shown to have potential as a transparent heater. Full article

Tungsten oxide (WO₃) nanostructures have emerged as promising electroactive materials due to their high pseudocapacitance, structural versatility, and chemical stability, while reduced graphene oxide (rGO) provides excellent electrical conductivity and surface area. The strategic combination of these nanomaterials in hybrid electrodes has gained attention for enhancing the energy storage performance of supercapacitors. In this work, we report the fabrication and electrochemical performance of nanostructured multilayer films based on the electrostatic Layer-by-Layer (LbL) self-assembly of poly (amidoamine) (PAMAM) dendrimers alternated with tungsten oxide (WO₃) nanofibers dispersed in reduced graphene oxide (rGO). The films were deposited onto indium tin oxide (ITO) substrates and subsequently subjected to electrochemical reduction. UV-Vis spectroscopy confirmed the linear growth of the multilayers, while atomic force microscopy (AFM) revealed homogeneous surface morphology and thickness control. Electrochemical characterization by cyclic voltammetry (CV) and galvanostatic charge–discharge (GCD) revealed a predominantly electrical double-layer capacitive (EDLC) behavior. From the GCD measurements (PAMAM/rGO-WO₃)₂₀ films achieved an areal capacitance of ≈2.20 mF·cm⁻², delivering an areal energy density of ≈0.17 µWh·cm⁻² and an areal power density of ≈2.10 µW·cm⁻², demonstrating efficient charge storage in an ultrathin electrode architecture. These results show that the synergistic integration of PAMAM dendrimers, reduced graphene oxide, and WO₃ nanofibers yields a promising strategy for designing high-performance electrode materials for next-generation supercapacitors. Full article

Dielectric/Ag/dielectric (DAD) multilayer thin-film transparent electrode features high visible-light transmittance, low sheet resistance, good mechanical flexibility, and low haze. The fabrication techniques are compatible with large-scale integrated circuits, and the materials are cheap. These advantages make the DAD transparent electrodes a promising alternative to indium tin oxide (ITO) electrodes for flexible devices. This review summarizes recent advances in DAD transparent electrodes on flexible substrates, mainly focusing on the opto-electrical performance improvement due to damping of the localized surface resonance (LSPR) of Ag nanoparticles (AgNPs). It begins with an analysis of the performance-limiting factors of DAD transparent electrodes, elucidating the importance of damping the LSPR of AgNPs. Subsequently, the state-of-the-art fabrication methods for Ag ultrathin films of weak LSPR and the dielectric material optimization are reviewed. It concludes with perspectives on future research. Full article

Addressing the urgent need for low-temperature processes in the manufacturing of flexible vehicle-mounted touch display devices, this study investigates the process–structure–performance relationships of indium tin oxide (ITO) thin films prepared by DC magnetron sputtering on transparent polyimide (CPI) substrates. A synergistic strategy of “low-temperature deposition (110 °C)–230 °C atmospheric annealing” was employed. The optimal sample exhibited excellent comprehensive performance: a resistivity as low as 203 μΩ·cm, an average visible light transmittance of 89.2%, a surface roughness of 0.76 nm, and the ability to endure 100,000 bending cycles at a radius of R = 5 mm with a sheet resistance change rate of less than 10%. Microstructural and chemical state analyses revealed that this process facilitates the complete oxidation of Sn²⁺ to Sn⁴⁺ (Sn⁴⁺/Sn²⁺ ratio of 8.2:1) and the controlled formation of oxygen vacancies (O_L/O_V ratio of 6.5:1), leading to a synergistic improvement in carrier concentration (8.7 × 10²⁰ cm⁻³) and mobility (35.2 cm²/V·s). This work elucidates the crystallization kinetics and doping mechanisms under low-temperature conditions, providing a viable low-temperature technical pathway for the fabrication of high-performance transparent electrodes in flexible electronics. Full article

Roll-to-roll production of thin organic and large-area electronic (TOLAE) devices often involves a two-step process per functional layer: a continuous, un-pattered deposition of the film and subsequent structuring process, such as laser ablation. Thin-film organic devices should be protected using ultra-barrier films. To perform laser ablation of functional layers on top of such barrier films, in particular that of transparent electrodes, highly selective laser ablation is required to completely remove the layers without damaging the thin-film barrier layers underneath. When targeting highly selective laser ablation of indium tin oxide (ITO) on top of silicon nitride (SiN) barrier layers with a 1064 nm picosecond or 1030 nm femtosecond laser, we observed the emergence of visible large-scale patterns due to local variations in ablation quality. Our investigations using a very sensitive Raman spectroscopy setup show that the observed ablation variations stem from subtle differences in optical path length within the heat-stabilized plastic substrates. These variations are likely caused by minute, localized changes in the refractive index, introduced during the bi-axial stretching process used in film fabrication. Depending on the optical path length, these variations lead to either constructive or destructive interference between the incoming laser beam and the light reflected from the back surface of the substrate. By performing laser ablation under an angle such that the reflected and incoming laser beam do not spatially overlap, highly selective uniform laser ablation can be performed, even for two stacked optically transparent layers. Full article

This study aims to propose a plausible application of a novel electrochemical biosensing system for detecting antibodies against SARS-CoV-2 (anti-rS) in serum samples. The uniqueness of this study lies in the biosensor utilizing recombinant spike glycoprotein (SCoV2-rS) immobilized on an indium tin oxide (ITO) electrode modified with (3-aminopropyl)triethoxysilane (APTES). The electrochemical performance was evaluated using square wave voltammetry (SWV), demonstrating a linear relationship between the current density and anti-rS concentration. The limit of detection (LOD) was found to be 113 ng/mL (0.75 nM), and the limit of quantitation (LOQ) was equal to 338 ng/mL (2.25 nM). The reported electrochemical biosensor offers a straightforward and efficient method for evaluating the immune status of individuals who have recovered from COVID-19 and been vaccinated against this virus without the need for any redox probe. Full article

Visual impairments pose a significant global health challenge, and visual electrophysiological (EP) acquisition plays a pivotal role in diagnosing ophthalmic diseases. However, traditional electrodes still encounter limitations such as inadequate mechanical adaptability and reusability. This study proposes a stretchable and transparent electrode (STE) consisting of a conductive paste/indium tin oxide layer on a polymethyl methacrylate substrate. Leveraging an island–bridge design, the STE renders reliable performance even after being subjected to 1000 cycles of 25% lateral strain and 18% diagonal strain, exhibiting exceptional mechanical flexibility and realizing seamless attachment to soft tissue. Furthermore, optimized conductive paste layer thickness yields a signal-to-noise ratio comparable to commercial electrodes, achieving equivalent performance to Ag/AgCl electrodes in electroretinogram (ERG), electrooculography (EOG), and visual evoked potential (VEP) acquisition. The STE’s mechanical suitability and inconspicuous features hold significant potential for widespread clinical adoption in ophthalmic diagnostics and personalized eye healthcare, offering improved comfort, reusability, and diagnostic precision. Full article

This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. This study is conducted as a fully numerical simulation using the Silvaco Atlas platform, providing detailed electrothermal and optoelectronic analysis of the proposed device. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. In the device architecture, the metal contacts consist of a 2 nm Nickel (Ni) adhesion layer followed by Gold (Au), employed as source and drain electrodes, while a recessed gate embedded within the substrate ensures improved electric field control and effective noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from the typical literature values of the order of ${10}^{-8}$ A to approximately ${10}^{-10}$ A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a SiC substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360 nm ultraviolet (UV) illumination, a high photo-to-dark current ratio (PDCR) found at approximately ${10}^6$, and tunable performance via structural optimization of p-GaN width between 0.40 μm and 1.60 μm, doping concentration from $5\times {10}^{16}$ ${\mathrm{cm}}^{-3}$ to $5\times {10}^{18}$ ${\mathrm{cm}}^{-3}$, and embedding depth between 0.060 μm and 0.068 μm. The results underscore the proposed structure’s notable effectiveness in passivation quality, suppression of gate leakage, and thermal management, collectively establishing it as a robust and reliable platform for next-generation UV photodetectors operating under harsh environmental conditions. Full article

The real-time, cost-effective detection of marine toxins like tetrodotoxin (TTX) remains a significant challenge for the scientific community. Traditional methods, including cell-based assays (CBAs), high-performance liquid chromatography (HPLC), and automated patch clamp (APC), are time-consuming, requiring expensive lab-based equipment and highly trained personnel. Enzyme-linked immunosorbent assays (ELISAs), lateral flow assays (LFAs), and immunosensors may not be suitable for toxin analogues. Thus, a simplified approach has been developed in this study, which involves the electrophysiological and electrochemical interrogation of N2a cells grown on ITO-coated glass electrodes by measuring extracellular field potentials (EFP) in conjunction with whole-cell patch clamp recordings and electrochemical impedance spectroscopy (EIS) measurements both before and after incubation with TTX. The ITO substrate proved biocompatible and non-toxic for N2a cells. TTX exposure caused 102% inhibition in EFP values at 300 nM, confirmed by sodium current inhibition of 93% at 300 nM and 22% at 1 nM in patch clamp studies (IC₅₀ = 6.7 nM). EIS measurements indicated concentration-dependent impedance changes in the range of 6–300 nM. This research aims to provide a proof-of-concept for integration of electrophysiological and electrochemical approaches to simplify toxin detection systems. Full article

Sol–gel-processed zinc oxide (ZnO) and magnesium-doped zinc oxide (ZnMgO) are widely used in quantum dot light-emitting diodes (QLEDs) due to their excellent charge transport properties, ease of fabrication, and tunable film characteristics. In particular, the ZnMgO/ZnO bilayer structure has attracted considerable attention for its dual functionality: defect passivation by ZnMgO and efficient charge transport by ZnO. However, while the effects of resistive switching (RS) in individual ZnO and ZnMgO layers on the aging behavior of QLEDs have been studied, the RS characteristics of sol–gel-processed ZnMgO/ZnO bilayers remain largely unexplored. In this study, we systematically analyzed RS properties of an indium tin oxide (ITO)/ZnMgO/ZnO/aluminum (Al) device, demonstrating superior performance compared to devices with single layers of either ZnMgO or ZnO. We also investigated the shelf-aging characteristics of RS devices with single and bilayer structures, finding that the bilayer structure exhibited the least variation over time, thereby confirming its enhanced uniformity and reliability. Furthermore, based on basic current–voltage measurements, we estimated accuracy variations in MNIST pattern recognition using a two-layer perceptron model. These results not only identify a promising RS device architecture based on the sol–gel process but also offer valuable insights into the aging behavior of QLEDs incorporating ZnMgO/ZnO bilayers, ITO, and Al electrodes. Full article

Synaptic activity is fundamental to memory and learning in the nervous system. However, most artificial synaptic devices are limited to mimicking static plasticity, and tunable plasticity has not been achieved at the device level. Here, we introduce a dynamic all-optical synapse based on photonic crystal nanobeam cavities with a ferroelectric carrier injection valve. By leveraging the nonlinear and ferroelectric electrostatic doping effects in silicon, integrated with Hf_0.5Zr_0.5O₂ (HZO) film as the ferroelectric layer and indium tin oxide (ITO) as the top electrode, we enhance linearity and reduce power consumption. Increasing the bias voltage further improves linearity while decreasing power consumption. This innovation offers a promising pathway for developing energy-efficient nanophotonic devices in neuromorphic computing. Full article

A hierarchical photoanode composed of amorphous indium phosphate (InPO_x)-coated titanium dioxide nanowires (TiO₂ NWs) was successfully fabricated via a hydrothermal method followed by dip-coating and thermal phosphidation. Structural characterization revealed the formation of a uniform InPO_x shell on the surface of vertically aligned TiO₂ NWs, without altering their 1D morphology. X-ray photoelectron spectroscopy confirmed the incorporation of phosphate species and the presence of oxygen vacancies, which contribute to enhanced interfacial charge dynamics. Photoelectrochemical (PEC) measurements demonstrated that the InPO_x/TiO₂ NWs significantly improved photocurrent density, with the 0.1 M InCl₃-derived sample achieving 0.36 mA·cm⁻² at 1.0 V—an enhancement of approximately 928% over pristine TiO₂. This enhancement is attributed to improved charge separation and injection efficiency (91%), as well as reduced interfacial resistance verified by electrochemical impedance spectroscopy. Moreover, the Mott–Schottky analysis indicated a four-order increase in carrier density due to the InPO_x shell. The modified electrode also exhibited superior stability under continuous illumination for 3 h. These findings highlight the potential of amorphous InPO_x as an effective cocatalyst for constructing efficient and durable TiO₂-based photoanodes for solar-driven water-splitting applications. Full article

Aiming to contribute to environmental remediation strategies, this work proposes a novel fabrication of photoelectrocatalytic electrodes containing a BiOI coating deposited onto non-conductive glass (NCG) for CO₂ conversion applications. When BiOI electrodes are not deposited onto fluorine-doped tin oxide (FTO) or indium tin oxide (ITO) conductive supports, the electrochemical measurements enable the registration of the (photo)electrochemical response for bare BiOI, thereby excluding remnant signals from the conductive supports and reporting an exclusive and proper photoelectrocatalytic BiOI response. A systematic procedure was carried out to improve the physicochemical properties of BiOI through a simple variation in the amount of reagents employed in a solvothermal synthesis, thus increasing the crystallite size and surface area of the resulting material (BiOI-X3-20wt.%). The tailored BiOI coating on a non-conductive support showed activity in performing CO₂ photoelectroreduction under UV–Vis irradiation in aqueous media. Finally, the BiOI-X3-20wt.% sample was evaluated for photocatalytic CO₂ conversion in gaseous media, producing CO as the primary reaction product. This study confirms that BiOI is a suitable and easily synthesized material, with potential applications for CO₂ capture and conversion when employed as a photoactive coating for environmental remediation. Full article

Transparent conductive electrodes (TCEs) are essential components in modern optoelectronic devices, including organic light-emitting diodes and solar cells, sensors, and flexible displays. Indium tin oxide has been the dominant material for TCEs due to its high transparency and conductivity. However, its brittleness, high cost, and increasingly limited availability pose significant challenges for electronics. Crack-template (CT)-assisted fabrication has emerged as a promising technique to develop metal mesh-based TCEs with superior mechanical flexibility, high conductivity, and excellent optical transmittance. This technique leverages the spontaneous formation of random and continuous microcrack networks in sacrificial templates, followed by metal deposition (e.g., Cu, Ag, Al, etc.), to produce highly conductive, scalable, and low-cost electrodes. Various crack formation strategies, including controlled drying of polymer suspensions, mechanical strain engineering, and thermal processing, have been explored to tailor electrode properties. Recent studies have demonstrated that crack-templated TCEs can achieve transmittance values exceeding 85% and sheet resistances below 10 Ω/sq, with mesh line widths as low as ~40 nm. Moreover, these electrodes exhibit enhanced stretchability and robustness under mechanical deformation, outperforming ITO in bend and fatigue tests. This review aims to explore recent advancements in CT engineering, highlighting key fabrication methods, performance metrics across different metals and substrates, and presenting examples of its applications in optoelectronic devices. Additionally, it will examine current challenges and future prospects for the widespread adoption of this emerging technology. Full article