Search Results (495)

The Golgi of goblet cells represents a specialized machine for mucin glycosylation. This process occurs in a specialized form of the secretory pathway, which remains poorly examined. Here, using high-resolution three-dimensional electron microscopy (EM), EM tomography, serial block face scanning EM (SBF-SEM) and immune EM we analyzed the secretory pathway in goblet cells and revealed that COPII-coated buds on the endoplasmic reticulum (ER) are extremely rare. The ERES vesicles with dimensions typical for the COPII-dependent vesicles were not found. The Golgi is formed by a single cisterna organized in a spiral with characteristics of the cycloid surface. This ribbon has a shape of a cup with irregular perforations. The Golgi cup is filled with secretory granules (SGs) containing glycosylated mucins. Their diameter is close to 1 µm. The cup is connected with ER exit sites (ERESs) with temporal bead-like connections, which are observed mostly near the craters observed at the externally located cis surface of the cup. The craters represent conus-like cavities formed by aligned holes of gradually decreasing diameters through the first three Golgi cisternae. These craters are localized directly opposite the ERES. Clusters of the 52 nm vesicles are visible between Golgi cisternae and between SGs. The accumulation of mucin, started in the fourth cisternal layer, induces distensions of the cisternal lumen. The thickness of these distensions gradually increases in size through the next cisternal layers. The spherical distensions are observed at the edges of the Golgi cup, where they fuse with SGs and detach from the cisternae. After the fusion of SGs located just below the apical plasma membrane (APM) with APM, mucus is secreted. The content of this SG becomes less osmiophilic and the excessive surface area of the APM is formed. This membrane is eliminated through the detachment of bubbles filled with another SG and surrounded with a double membrane or by collapse of the empty SG and transformation of the double membrane lacking a visible lumen into multilayered organelles, which move to the cell basis and are secreted into the intercellular space where the processes of dendritic cells are localized. These data are evaluated from the point of view of existing models of intracellular transport. Full article

AlGaN-based high-electron-mobility transistors are critical for next-generation power electronics and radio-frequency applications, yet achieving stable enhancement-mode operation with a high threshold voltage remains a key challenge. In this work, we designed p-AlGaN superlattices with different structures and performed energy band structure simulations using the device simulation software Silvaco. The results demonstrate that thin barrier structures lead to reduced acceptor incorporation, thereby decreasing the number of ionized acceptors, while facilitating vertical hole transport. Superlattice samples with varying periodic thicknesses were grown via metal-organic chemical vapor deposition, and their crystalline quality and electrical properties were characterized. The findings reveal that although gradient-thickness barriers contribute to enhancing hole concentration, the presence of thick barrier layers restricts hole tunneling and induces stronger scattering, ultimately increasing resistivity. In addition, we simulated the structure of the enhancement-mode HEMT with p-AlGaN as the under-gate material. Analysis of its energy band structure and channel carrier concentration indicates that adopting p-AlGaN superlattices as the under-gate material facilitates achieving a higher threshold voltage in enhancement-mode HEMT devices, which is crucial for improving device reliability and reducing power loss in practical applications such as electric vehicles. Full article

This study presents a novel approach to mitigate electron overflow in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs) by integrating engineered quantum barriers (QBs) with a concave shape and an optimized AlGaN superlattice (SL) electron blocking layer (EBL). The concave QBs reduce electron leakage by lowering the electron thermal velocity and mean free path, enhancing electron capture in the active region. The SL EBL further reduces electron overflow without compromising hole transport. At a wavelength of ~253.7 nm, the proposed LED demonstrates a 2.67× improvement in internal quantum efficiency (IQE) and a 2.64× increase in output power at 150 mA injection, with electron leakage reduced by ~4 orders of magnitude compared to conventional LEDs. The efficiency droop is found to be just 2.32%. Full article

As a key insulating material in power equipment, epoxy resins (EP) are often limited in practical applications due to space charge accumulation and mechanical degradation. This study systematically investigates the effects of SiO₂ nanoparticle doping on the electrical and mechanical properties of SiO₂/EP composites through molecular dynamics simulations and first-principles calculations. The results demonstrate that SiO₂ doping enhances the mechanical properties of EP, with notable improvements in Young’s modulus, bulk modulus, and shear modulus, while maintaining excellent thermal stability across different temperatures. Further investigations reveal that SiO₂ doping effectively modulates the interfacial charge behavior between EP and metals (Cu/Fe) by introducing shallow defect states and reconstructing interfacial dipoles. Density of states analysis indicates the formation of localized defect states at the interface in doped systems, which dominate the defect-assisted hopping mechanism for charge transport and suppress space charge accumulation. Potential distribution calculations show that doping reduces the average potential of EP (1 eV for Cu layer and 1.09 eV for Fe layer) while simultaneously influencing the potential distribution near the polymer–metal interface, thereby optimizing the interfacial charge injection barrier. Specifically, the hole barrier at the maximum valence band (VBM) after doping significantly increased, rising from the initial values of 0.448 eV (Cu interface) and 0.349 eV (Fe interface) to 104.02% and 209.46%, respectively. These findings provide a theoretical foundation for designing high-performance epoxy-based composites with both enhanced mechanical properties and controllable interfacial charge behavior. Full article

Perovskite solar cells (PSCs) have already been reported as a promising alternative to traditional energy sources due to their excellent power conversion efficiency, affordability, and versatility, which is particularly relevant considering the growing worldwide demand for energy and increasing scarcity of natural resources. However, operational concerns under environmental stresses hinder its economic feasibility. Through the addition of cesium (Cs), this study investigates how to optimize perovskite solar cells (PSCs) based on methylammonium lead-iodide (MAPbI₃) by creating mixed-cation compositions of MA_1−xCs_xPbI₃ (x = 0, 0.25, 0.5, 0.75, 1) for devices A to E, respectively. The impact of cesium content on the following factors, such as open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor (FF), and power conversion efficiency (PCE), was investigated using simulation software, with ITO/TiO₂/MA_1−xCs_xPbI₃/Spiro-OMeTAD/Au as a device architecture. Due to diminished defect density, the device with x = 0.5 (MA_0.5Cs_0.5PbI₃) attains a maximum power conversion efficiency of 18.53%, with a V_oc of 0.9238 V, J_sc of 24.22 mA/cm², and a fill factor of 82.81%. The optimal doping density of TiO₂ is approximately 10²⁰ cm⁻³, while the optimal thicknesses of the electron transport layer (TiO₂, 10–30 nm), the hole-transport layer (Spiro-OMeTAD, about 10–20 nm), and the perovskite absorber (750 nm) were identified to maximize efficiency. The inclusion of a small amount of Cs may improve photovoltaic responses; however, at elevated concentrations (x > 0.5), power conversion efficiency (PCE) diminished due to the presence of trap states. The results show that mixed-cation perovskite solar cells can be a great commercially viable option because they strike a good balance between efficiency and performance. Full article

Flexible perovskite solar cells (FPSCs) hold great promise for lightweight and wearable photovoltaics, but improving their efficiency and durability under mechanical stress remains a key challenge. In this work, we fabricate and characterize flexible planar FPSCs on a polyethylene terephthalate (PET). A phenethylammonium iodide (PEAI) surface passivation layer is introduced on the perovskite to form a two-dimensional capping layer, and its impact on device performance and stability is systematically studied. The champion PEAI-passivated flexible device achieves a power conversion efficiency (PCE) of ~16–17%, compared to ~14% for the control device without PEAI. The improvement is primarily due to an increased open-circuit voltage and fill factor, reflecting effective surface defect passivation and improved charge carrier dynamics. Importantly, mechanical bending tests demonstrate robust flexibility: the PEAI-passivated cells retain ~85–90% of their initial efficiency after 700 bending cycles (radius ~5 mm), significantly higher than the ~70% retention of unpassivated cells. This work showcases that integrating a PEAI surface treatment with optimized electron (SnO₂) and hole (spiro-OMeTAD) transport layers (ETL and HTL) can simultaneously enhance the efficiency and mechanical durability of FPSCs. These findings pave the way for more reliable and high-performance flexible solar cells for wearable and portable energy applications. Full article

Poly[bis(4-phenyl) (2,5,6-trimethylphenyl) amine (PTAA), as a hole transfer material, has been widely used in perovskite solar cells (PSCs). However, the optimal solvent for preparing the PTAA solution and coating the PTAA layer is still uncertain. In this work, we investigated three types of organic solvents (toluene, chlorobenzene and dichlorobenzene) for processing PTAA layers as the hole transport layer in PSCs. Based on the experimental verification and molecular dynamics simulation results, all the evidence indicated that toluene performs best among the three candidates. This is attributed to the significant polarity difference between toluene and PTAA, which leads to the formation of a uniform surface morphology characterized by granular protuberances after spin coating. The contact area of the hole transfer layer with the surface aggregation is increased in reference to the rough surface, and the hydrophilicity of the PTAA layer is also increased. The improvement of these two aspects are conducive to the effective interfacial charge transfer. This leads to the generation of more photocurrent. The PSCs employing toluene-processed PTAA exhibit an average power conversion efficiency (PCE) of 19.1%, which is higher than that of PSCs using chlorobenzene- and dichlorobenzene-processed PTAA (17.3–17.9%). This work provides a direct optimization strategy for researchers aiming to fabricate PSCs based on PTAA as a hole transport layer and lays a solid foundation for the development of high-efficiency inverted PSCs. Full article

This work explored an electrochemical approach for synthesizing lanthanum-modified nickel oxide (NiO_x:La) as a hole transport layer (HTL) in inverted perovskite solar cells (IPSCs). By varying the La³⁺ concentration, the chemical, charge transport, structural, and morphological properties of the NiO_x:La film and the HTL/PVK interface were evaluated to enhance photovoltaic performance. X-ray photoelectron spectroscopy (XPS) confirmed La³⁺ incorporation, a higher Ni³⁺/Ni³⁺ ratio, and a valence band shift, improving p-type conductivity. Electrochemical impedance spectroscopy and Mott–Schottky analyses indicated that NiO_x:La 0.5% exhibited the lowest resistance and the highest carrier density, correlating with higher recombination resistance. The NiO_x:La 0.5% based cell achieved a PCE of 20.08%. XRD and SEM confirmed no significant changes in PVK structure, while photoluminescence extinction demonstrated improved charge extraction. After 50 days, this cell retained 80% of its initial PCE, whereas a pristine NiO_x device retained 75%. Hyperspectral imaging revealed lower optical absorption loss and better homogeneity. These results highlight NiO_x:La as a promising HTL for efficient and stable IPSCs. Full article

In recent years, inverted perovskite solar cells (PSCs) have garnered widespread attention due to their high compatibility, excellent stability, and potential for low-temperature manufacturing. However, most of the current research has primarily focused on the surface passivation of perovskite. In contrast, the buried interface significantly influences the crystal growth quality of perovskite, but it is difficult to effectively control, leading to relatively slow research progress. To address the issue of poor interfacial contact between the hole transport-layer nickel oxide (NiOX) and the perovskite, we introduced a conjugated self-assembled monolayer (SAM), 4,4′-[(4-(3,6-dimethoxy-9H-carbazole)triphenylamine)]diphenylacetic acid (XS21), which features triphenylamine dicarboxylate groups. For comparison, we also employed the widely studied phosphonic acid-based SAM, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl] phosphonic acid (MeO-2PACz). A systematic investigation was carried out to evaluate the influence of these SAMs on the performance and stability of inverted PSCs. The results show that both XS21 and MeO-2PACz significantly enhanced the crystallinity of the perovskite layer, reduced defect densities, and suppressed non-radiative recombination. These improvements led to more efficient hole extraction and transport at the buried interface. Consequently, inverted PSCs incorporating XS21 and MeO-2PACz achieved impressive power-conversion efficiencies (PCEs) of 21.43% and 22.43%, respectively, along with marked enhancements in operational stability. Full article

This study presents the first comprehensive theoretical investigation utilizing SCAPS-1D simulation to systematically evaluate eight hole transport materials for CsPbI₂Br perovskite solar cells under authentic indoor LED conditions (560 lux, 5700 K color temperature). Unlike previous studies employing simplified illumination assumptions, our work establishes fundamental design principles for indoor photovoltaics through rigorous material property correlations. The investigation explores the influence of layer thickness and defect concentration on performance to identify optimal parameters. Through detailed energy band alignment analysis, we demonstrate that CuI achieves superior performance (PCE: 23.66%) over materials with significantly higher mobility, revealing that optimal band alignment supersedes carrier mobility under low-light conditions. Analysis of HTL and absorber layer thickness, bulk defect concentration, interface defect density, and an HTL-free scenario showed that interface defect concentration and absorber layer parameters have greater influence than HTL thickness. Remarkably, ultra-thin HTL layers (0.04 μm) maintain >99% efficiency, offering substantial cost reduction potential for large-scale manufacturing. Under optimized conditions of a 0.87 μm absorber layer thickness, defect concentration of 10¹⁵ cm⁻³, interface defect concentration of 10⁹ cm⁻³, and CuI doping concentration of 10¹⁷ cm⁻³, PCE reached 28.57%, while the HTL-free structure achieved 17.6%. This study establishes new theoretical foundations for indoor photovoltaics, demonstrating that material selection criteria differ fundamentally from outdoor applications. Full article

Barium stannate (BaSnO₃) has emerged as a promising alternative electron transport material owing to its superior electron mobility, resistance to UV degradation, and energy bandgap tunability, yet BaSnO₃-based perovskite solar cells have not reached the efficiency levels of TiO₂-based designs. This theoretical study presents a design-driven evaluation of BaSnO₃-based perovskite solar cell architectures, incorporating MAPbI₃ or FAMAPbI₃ perovskite materials, Spiro-OMeTAD, or Cu₂O hole transport materials as well as hole-free configurations, under varying light intensity. Using a systematic device modelling approach, we explore the influence of key design variables—such as layer thickness, donor density, and interface defect concentration—of BaSnO₃ and operating temperature on the power conversion efficiency (PCE). Among the proposed designs, the FTO/BaSnO₃/FAMAPbI₃/Cu₂O/Au heterostructure exhibits an exceptionally effective arrangement with PCE of 38.2% under concentrated light (10,000 W/m², or 10 Sun). The structure also demonstrates strong thermal robustness up to 400 K, with a low temperature coefficient of −0.078% K⁻¹. These results underscore the importance of material and structural optimisation in PSC design and highlight the role of high-mobility, thermally stable inorganic transport layers—BaSnO₃ as the electron transport material (ETM) and Cu₂O as the hole transport material (HTM)—in enabling efficient and stable photovoltaic performance under high irradiance. The study contributes valuable insights into the rational design of high-performance PSCs for emerging solar technologies. Full article

The growing demand for reliable micropower sources in extreme environments has accelerated the development of betavoltaic cells (BV cells) with high energy conversion efficiency and superior radiation resistance. This study demonstrates an advanced BV cell architecture utilizing three-dimensional TiO₂ nanorod arrays (TNRAs) integrated with a NiO_x hole transport layer (HTL). Monte Carlo simulations were employed to optimize the cell design and determine the fabrication parameters for growing TNRAs on FTO substrates via hydrothermal synthesis. The performance evaluation employed both electron beam (2.36 × 10⁹ e/cm²·s) and ⁶³Ni (3.4 mCi/cm²) irradiation methods. The simulation results revealed optimal energy deposition characteristics, with ~96% of β-particle energy effectively absorbed within the 2 μm thick FTO/TNRA/NiO_x/Au structure. The NiO_x-incorporated device achieved an energy conversion efficiency of 4.84%, with a short-circuit current of 119.9 nA, an open-circuit voltage of 324.2 mV, and a maximum power output of 24.0 nW, representing a 3.76-fold enhancement over HTL-free devices. Radioactive source testing confirmed stable power generation and linear efficiency scaling, validating electron beam irradiation as an effective accelerated testing methodology for BV cell research. Full article

Three-dimensional/two-dimensional bilayered perovskite solar cells have recently become popular for ensuring high efficiency and promising long-term stability. The 3D/2D bilayered perovskite thin film is mainly used in regular (n-i-p)-type perovskite solar cells. In this review, our discussion also focuses on the regular kind of perovskite solar cells. In a 3D/2D bilayered perovskite thin film, the 2D perovskite layer works as a capping layer on top of the 3D perovskite thin film. The 2D capping layer heals the surface and bulk defects of the 3D perovskite thin film. The 2D layer interfaces between the 3D perovskite and hole transport layers. The 2D layer also acts as a shield against moisture and heat. This layer also inhibits ion migration between layers (3D perovskite and back contact). This review lists and investigates different organic precursors deposited as a 2D capping layer on top of the 3D perovskite thin film to explore their impact on the solar cell’s efficiency and stability. The possible challenges and remedies in growing a 2D capping layer on top of the 3D perovskite thin film are also discussed. Full article

Black phosphorus is a promising thermoelectric (TE) material because of its high Seebeck coefficient and high electrical conductivity. In this work, the TE performance of bulk black phosphorus and single-layer phosphorene under uniaxial strain is studied using first-principles calculations and Boltzmann transport theory. The results show relatively excellent TE performance along the armchair direction for both black phosphorus and phosphorene in our study. However, high lattice thermal conductivity is the key adverse factor for further enhancing the TE performance of phosphorus. The ZT value can only reach up to 0.97 and 0.73 for n- and p-type black phosphorus at 700 K, respectively. Owing to quantum size effects, black phosphorene has lower lattice thermal conductivity than black phosphorus. At the same time, two-dimensional (2D) phosphorene exhibits increased electronic energy compared with bulk black phosphorus, resulting in a larger bandgap and reduced electrical conductivity due to the quantum confinement effect. Thus, the TE performance of n-type phosphorene can be partially improved, and the ZT value reaches up to 1.41 at 700 K. However, the ZT value decreases from 0.73 to 0.70 for p-type phosphorene compared with bulk phosphorus at 700 K. To further improve the TE performance of phosphorene, a tensile strain is applied along the armchair direction. Subsequent work indicates that uniaxial strain can further optimize phosphorene’s TE properties by tuning hole relaxation time to improve electrical conductivity. Strikingly, the ZT values exceed 1.7 for both n- and p-type phosphorene under 4.5% tensile strain along the armchair direction at 700 K because of increased electrical conductivity and decreased lattice thermal conductivity. Full article

Hematite (Fe₂O₃) has been accepted as a promising and potential photo(electro)catalyst. However, its poor carrier separation and transfer efficiency has limited its application for photoelectrocatalytic (PEC) water oxidation. Herein, a S-doped FeOOH (S:FeOOH) layer was rationally designed and grown on Fe₂O₃ to construct a S:FeOOH/Fe₂O₃ composite photoanode. The obtained S:FeOOH/Fe₂O₃ photoanodes were fully characterized. The surface injection efficiency for Fe₂O₃ was then significantly increased with a high η_surface value of 92.8%, which increases to 2.98 times for Fe₂O₃ and 2.16 times for FeOOH/Fe₂O₃, respectively. With 2.43 mA cm^‒2 at 1.23 V, the optimized S:FeOOH/Fe₂O₃ photoanode was entrusted with a higher photocurrent density. The onset potential for S:FeOOH/Fe₂O₃ cathodically shifts 70 mV over Fe₂O₃. The improved PEC performance suggests that the S:FeOOH layer acts as ultrafast transport channels for holes at the photoanode/electrolyte interface, suppressing surface charge recombination. A Z-scheme band alignment between Fe₂O₃ and S:FeOOH was deduced from the UV–Vis and UPS spectra to promote charge transfer. This method provides an alternative for the construction of photoanodes with enhanced PEC water splitting performance. Full article