Metal Halide Perovskites-Based Optoelectronics: From Lab to Fab

Dear Colleagues,

Metal halide perovskites have emerged as state-of-the-art semiconductors, especially for optoelectronics. The most attractive advantages lie in their high absorption coefficients, long charge-carrier diffusion length, tunable bandgap, and low-cost processability. Benefiting from these merits, the record efficiency of the optoelectronics, including solar cells and light-emitting diodes, has been comparable to that of the standard commercialized devices. Unfortunately, there are a plethora of issues born from the intrinsic ionic structures, which serve as bottlenecks to accessing future applications. Hence, in order to push the highly promising metal halide perovskites from lab to fab, a rational roadmap varying from simulations to crystal structures and ending with device physics should be designed step by step.

Herein, the problems that we would like to address in this Special Issue are as follows:

1. Stability issues and order degree of crystal structures from simulations: to enhance the intrinsic stability of perovskites and narrow the gap between simulations and experiments;
2. Efficient photogenerated charge-carrier transport of perovskite materials: to reduce the energy loss and enhance the device efficiency in principle;
3. Orientated crystal growth dynamics of perovskite materials: to remove the excess barriers from unpreferred crystal planes and allow more efficient charge-carrier transport;
4. Techniques and applications of single crystals vs. nanocrystals vs. polycrystalline films: to facilitate different perovskite status to meet the diverse needs of optoelectronics;
5. Architecture design of optoelectronic devices: to reduce the interfacial and foreign loss to further enhance device efficiency;
6. Long-term stability of optoelectronic devices: to improve the device operations from stabilized perovskite materials, reinforced interfaces, and encapsulations.

Dr. Fang Yuan
Dr. Hua Dong
Guest Editors

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