Search Results (1,724)

In this study, we propose a bidirectional chemical sensor platform based on a reconfigurable ion-sensitive field-effect transistor (R-ISFET) architecture. The device incorporates Ni-silicide Schottky barrier source/drain (S/D) contacts, enabling ambipolar conduction and bidirectional turn-on behavior for both p-type and n-type configurations. Channel polarity is dynamically controlled via the program gate (PG), while the control gate (CG) suppresses leakage current, enhancing operational stability and energy efficiency. A dual-control-gate (DCG) structure enhances capacitive coupling, enabling sensitivity beyond the Nernst limit without external amplification. The extended-gate (EG) architecture physically separates the transistor and sensing regions, improving durability and long-term reliability. Electrical characteristics were evaluated through transfer and output curves, and carrier transport mechanisms were analyzed using band diagrams. Sensor performance—including sensitivity, hysteresis, and drift—was assessed under various pH conditions and external noise up to 5 V_pp (i.e., peak-to-peak voltage). The n-type configuration exhibited high mobility and fast response, while the p-type configuration demonstrated excellent noise immunity and low drift. Both modes showed consistent sensitivity trends, confirming the feasibility of complementary sensing. These results indicate that the proposed R-ISFET sensor enables selective mode switching for high sensitivity and robust operation, offering strong potential for next-generation biosensing and chemical detection. Full article

The unique properties of graphene have allowed for the development of graphene-based field-effect transistors (GFETs) for applications in biosensors and chemical devices. However, the modeling and optimization of GFET performance exhibit great challenges. Herein, we propose a quantum transport simulation model for graphene-based field-effect transistors (GFETs) implemented in the open-source Octave programming language. The proposed simulation model (named SimQ) combines the Landauer–Büttiker formalism with self-consistent Schrödinger–Poisson solutions, enabling reliable simulations of transport phenomena. Our approach agrees well with established models, achieving Landauer–Büttiker transmission and tunneling transmission of 0.28 and 0.92, respectively, which are validated against experimental data. The model can predict key GFET characteristics, including carrier mobilities (500–4000 cm²/V·s), quantum capacitance effects, and high-frequency operation (80–100 GHz). SimQ offers detailed insights into charge distribution and wave function evolution, achieving an enhanced computational efficiency through optimized algorithms. Our work contributes to the modeling of graphene-based field-effect transistors, providing a flexible and accessible simulation platform for designing and optimizing GFETs with potential applications in the next generation of electronic devices. Full article

Thermal management is an area of study in electronics focused on managing temperature to improve reliability and efficiency. When temperatures are too high, cooling systems are activated to prevent overheating, which can lead to reliability issues. To monitor the temperatures, sensors are often placed on-chip near hotspot locations. These sensors should be very small to allow them to be placed among compact, high-activity circuits. Often, they are connected to a central control circuit located far away from the hot spot locations where more area is available. This paper proposes sensing units for a novel temperature sensing architecture in the TSMC 180 nm process. This architecture functions by approximating the current through the sensing unit at a reference voltage, which is used to approximate the temperature in the digital back end using fitting functions. Sensing units are selected based on how well its temperature–current relationship can be modeled, sensing unit area, and power consumption. Many sensing units will be experimented with at different reference voltages. These temperature–current curves will be modeled with various fitting functions. The sensing unit selected is a diode-connected p-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a size of W = 400 nm, L = 180 nm. This sensing unit is exceptionally small compared to existing work because it does not rely on multiple devices at the sensing unit location to generate a PTAT or IPTAT signal like most work in this area. The temperature–current relationship of this device can also be modeled using a 2nd order polynomial, requiring a minimal number of trim temperatures. Its temperature error is small, and the power consumption is low. The range of currents for this sensing unit could be reasonably made on an IDAC. Full article

The detection of proteins plays a key role in disease diagnosis and drug development. For this, we numerically investigated a novel microfluidic motor actuated by an induced-charge electro-osmotic (ICEO) whirling flow. An alternating current–flow field effect transistor is engineered to modulate the profiles of ICEO streaming to stimulate and adjust the whirling flow in the circle microfluidic chamber. Based on this, we studied the distribution of an ICEO whirling flow in the detection chamber by tuning the fixed potential on the gate electrodes by the simulations. Then, we established a fluid–structure interaction model to explore the influence of blade structure parameters on the rotation performance of microfluidic motors. In addition, we investigated the rotation dependence of microfluidic motors on the potential drop between two driving electrodes and fixed potential on the gate electrodes. Next, we numerically explored the capability of these microfluidic motors for the detection of low-abundance proteins. Finally, we studied the regulating effect of potential drops between the driving electrodes on the detection performance of microfluidic motors by numerical simulations. Microfluidic motors actuated by an ICEO whirling flow hold good potential in environmental monitoring and disease diagnosis for the outstanding advantages of flexible controllability, a simple structure, and gentle work condition. Full article

The development of an integrated circuit faces the challenge of the physical limit of Moore’s Law. One of the most important “Beyond Moore” challenges is the scaling down of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) versus their increasing static power consumption. This is because, at room temperature, the thermal emission transportation mechanism will cause a physical limitation on subthreshold swing (SS), which is fundamentally limited to a minimum value of 60 mV/decade for MOSFETs, and accompanied by an increase in off-state leakage current with the process of scaling down. Moreover, the impacts of short-channel effects on device performance also become an increasingly severe problem with channel length scaling down. Due to the band-to-band tunneling mechanism, Tunnel Field-Effect Transistors (TFETs) can reach a far lower SS than MOSFETs. Recent research works indicated that TFETs are already becoming some of the promising candidates of conventional MOSFETs for ultra-low-power applications. This paper provides a review of some advances in materials and structures along the evolutionary process of TFETs. An in-depth discussion of both experimental works and simulation works is conducted. Furthermore, the performance of TFETs with different structures and materials is explored in detail as well, covering Si, Ge, III-V compounds and 2D materials, alongside different innovative device structures. Additionally, this work provides an outlook on the prospects of TFETs in future ultra-low-power electronics and biosensor applications. Full article

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (L_ext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (I_off = 10⁻¹⁰ A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (I_off = 10⁻¹⁴ A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article

As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability. FinFETs, especially junctionless FinFETs on silicon-on-insulator (SOI) substrates, offer improved electrostatic control and simplified fabrication, making them attractive for deeply scaled nodes. In this work, we propose a novel Stepped-Spacer Structured FinFET (S³-FinFET) that incorporates a three-layer HfO₂/Si₃N₄/HfO₂ spacer configuration designed to enhance electrostatics and suppress parasitic effects. Using 2D TCAD simulations, the S³-FinFET is evaluated in terms of key performance metrics, including transfer/output characteristics, ON/OFF current ratio, subthreshold swing (SS), drain-induced barrier lowering (DIBL), gate capacitance, and cut-off frequency. The results show significant improvements in leakage control and high-frequency behavior. These enhancements make the S³-FinFET particularly well-suited for Field-Programmable Gate Arrays (FPGAs), where power efficiency, speed, and signal integrity are critical to performance in reconfigurable logic environments. Full article

Microorganisms play a crucial role in food processes, safety, and quality through their dynamic interactions with other organisms. In recent years, biosensors have become essential tools for monitoring these processes in the dairy, meat, and fresh produce industries. This review highlights how microbial diversity, starter cultures, and interactions, such as competition and quorum sensing, shape food ecosystems. Diverse biosensor platforms, including electrochemical, optical, piezoelectric, thermal, field-effect transistor-based, and lateral flow assays, offer distinct advantages tailored to specific food matrices and microbial targets, enabling rapid and sensitive detection. Biosensors have been developed for detecting pathogens in real-time monitoring of fermentation and tracking spoilage. Control strategies, including bacteriocins, probiotics, and biofilm management, support food safety, while decontamination methods provide an additional layer of protection. The integration of new techniques, such as nanotechnology, CRISPR, and artificial intelligence, into Internet of Things systems is enhancing precision, particularly in addressing regional food safety challenges. However, their adoption is still hindered by complex food matrices, high costs, and the growing challenge of antimicrobial resistance. Looking ahead, intelligent systems and wearable sensors may help overcome these barriers. Although gaps in standardization and accessibility remain, biosensors are well-positioned to revolutionize food microbiology, linking ecological insights to practical solutions and paving the way for safer, high-quality food worldwide. Full article

With the development of various new types of instrumental aroma sensing technologies, there is a need for methodologies that help developers and users evaluate the performance of the different devices. This study introduces a simple method that uses standard coffee beverages, reproducible worldwide, thus allowing users to compare aroma sensing devices and technologies globally. Eight different variations of commercial coffee capsules were used to brew espresso coffees (40 mL), consisting of either Arabica coffee or a blend of Robusta and Arabica coffee, covering a wide range of sensory attributes. The AlphaMOS Astree electronic tongue (equipped with sensors based on chemically modified field-effect transistor technology) and the AlphaMOS Heracles NEO and the Volatile Scout3 electronic noses (both using separation technology based on gas chromatography) were used to describe the taste and odor profiles of the freshly brewed coffee samples and also to compare them to the various sensory characteristics declared on the original packaging, such as intensity, roasting, acidity, bitterness, and body. Linear discriminant analysis (LDA) results showed that these technologies were able to classify the samples similarly to the pattern of the coffees based on the human sensory characteristics. In general, the arrangement of the different coffee types in the LDA results—i.e., the similarities and dissimilarities in the types based on their taste or smell—was the same in the case of the Astree electronic tongue and the Heracles electronic nose, while slightly different arrangements were found for the Scout3 electronic nose. The results of the Astree electronic tongue and those of the Heracles electronic nose showed the taste and smell profiles of the decaffeinated coffees to be different from their caffeinated counterparts. The Heracles and Scout3 electronic noses provided high accuracies in classifying the samples based on their odor into the sensory classes presented on the coffee capsules’ packaging. Despite the technological differences in the investigated devices, the introduced coffee test could assess the similarities in the taste and odor profiling capacities of the aroma fingerprinting technologies. Since the coffee capsules used for the test can be purchased all over the world in the same quality, these coffees can be used as global standard samples during the comparison of different devices applying different measurement technologies. The test can be used to evaluate instrumentational and data analytical developments worldwide and to assess the potential of novel, cost-effective, accurate, and rapid solutions for quality assessments in the food and beverage industry. Full article

Organic phototransistors exhibit considerably higher photoresponsivity than diode-like photodetectors owing to gate-field-effect amplification. However, the conventional definition of photoresponsivity (R) fails to accurately capture the photoresponsivity trends of transistor-based photodetectors. This study systematically investigates the impact of device geometry—specifically the width-to-length (W/L) ratio and photosensitive area—on the responsivity and photocurrent of organic phototransistors. The experimental results reveal that increasing the W/L ratio or decreasing the device area substantially enhances responsivity. A detailed analysis based on the definition of responsivity is presented herein. Finally, we introduce a channel-width-normalized responsivity to compensate for geometric effects, enabling a more accurate evaluation of device performance across different device structures. Overall, our results indicate the potential for optimizing organic phototransistors by tuning their geometric parameters. Full article

Real-time, high-resolution monitoring of chemically diverse water pollutants remains a critical challenge for smart water management. Here, we report a fully integrated, multi-modal nano-sensor array, combining graphene field-effect transistors, Ag/Au-nanostar surface-enhanced Raman spectroscopy substrates, and CdSe/ZnS quantum dot fluorescence, coupled to an edge-deployable CNN-LSTM architecture that fuses raw electrochemical, vibrational, and photoluminescent signals without manual feature engineering. The 45 mm × 20 mm microfluidic manifold enables continuous flow-through sampling, while 8-bit-quantised inference executes in 31 ms at <12 W. Laboratory calibration over 28,000 samples achieved limits of detection of 12 ppt (Pb²⁺), 17 pM (atrazine) and 87 ng L⁻¹ (nanoplastics), with R² ≥ 0.93 and a mean absolute percentage error <6%. A 24 h deployment in the Cherwell River reproduced natural concentration fluctuations with field R² ≥ 0.92. SHAP and Grad-CAM analyses reveal that the network bases its predictions on Dirac-point shifts, characteristic Raman bands, and early-time fluorescence-quenching kinetics, providing mechanistic interpretability. The platform therefore offers a scalable route to smart water grids, point-of-use drinking water sentinels, and rapid environmental incident response. Future work will address sensor drift through antifouling coatings, enhance cross-site generalisation via federated learning, and create physics-informed digital twins for self-calibrating global monitoring networks. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

In recent years, the number of transistors on electronic chips has surpassed Moore’s law, resulting in overheating and energy consumption problems in data centers (DCs). Chip-level microchannel cooling is expected to address these challenges. Grooved heat sinks with droplet-shaped fins were introduced to modify the overall capability of the cooling system. The degree of impact of the distribution of grooves and fins was analyzed and optimized using the Taguchi method. Moreover, the coupling effect of flow and temperature fields was explained using the field synergy theory. The key findings are as follows: for thermal resistance, pump power, and overall efficiency, the influence degree is the number of combined units > number of fins in each unit > distribution of the combined units. The optimal configuration of 21 combined units arranged from dense to sparse with one fin in each unit achieves 14.05% lower thermal resistance and 8.5% higher overall efficiency than the initial heat sink. The optimal configuration of five combined units arranged from sparse to dense with one fin in each unit reduces the power energy consumption by 27.61%. After optimization, the synergy angle between the velocity vector and temperature gradient is reduced by 4.29% compared to the smooth heat sink. The coupling effect between flow and heat transport is strengthened. The optimized configuration can better balance heat dissipation and energy consumption, improve the comprehensive capability of cooling system, provide a feasible solution to solve the problems of local overheating and high energy consumption in DCs. Full article

Sepsis remains a global health emergency, demanding timely and accurate diagnostics to reduce morbidity and mortality. This review critically assesses the recent progress (2020–2025) in the development of electrochemical aptamer-based biosensors for sepsis detection. These biosensors combine aptamers’ high specificity and modifiability with the sensitivity and miniaturization potential of electrochemical platforms. The analysis highlights notable advances in detecting key sepsis biomarkers, such as C-reactive protein (CRP), procalcitonin (PCT), interleukins (e.g., interleukin-6 (IL-6), tumor necrosis factor-alpha (TNF-α)), lipopolysaccharides (LPSs), and microRNAs using diverse sensor configurations, including a field-effect transistor (FET), impedance spectroscopy, voltammetry, and hybrid nanomaterial-based systems. A comparative evaluation reveals promising analytical performance in terms of the limit of detection (LOD), rapid response time, and point-of-care (POC) potential. However, critical limitations remain, including variability in validation protocols, limited testing in real clinical matrices, and challenges in achieving multiplexed detection. This review underscores translational barriers and recommends future directions focused on clinical validation, integration with portable diagnostics, and interdisciplinary collaboration. By consolidating current developments and gaps, this work provides a foundation for guiding next-generation biosensor innovations aimed at effective sepsis diagnosis and monitoring. Full article

The transient overvoltage caused by coupling of loop inductance during rapid turn off of a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) can easily induce avalanche breakdown. Meanwhile, the instantaneous high-density heat flux generated by energy dissipation can create significant electrothermal coupling stress, potentially leading to device failure under severe conditions. To address the issue that the multi-chip parallel structure of power modules cannot linearly enhance avalanche withstand capability, an innovative device screening method based on parameter matching is proposed in this paper. The effectiveness of the proposed solution is verified through experiments, with the total current limit of dual-tube parallel devices and three-tube parallel devices achieving 1.9 times and 2.4 times that of single-tube devices, respectively. This research is of great significance for improving safe and reliable operation of the system. Full article