Search Results (278)

Vertical low-permeability barriers are widely used to improve the stability and seepage resistance of flood embankments. The present study evaluates three barrier technologies—vibrating beam slurry walls (VBSWs), deep soil mixing (DSM), and low-pressure grout injection (LPG)—through a series of consolidated drained triaxial tests and permeability coefficient tests on soil samples collected from the sites where different barrier installation technologies were used. All three barrier installation methods produced substantial improvements in both mechanical and hydraulic performance: the effective angle of internal friction (φ′) increased by 3–6° in samples with a plasticity index near 3.5%, and coefficients of permeability dropped from 10⁻⁸–10⁻⁷ m/s in untreated soils to below 10⁻⁹ m/s in treated specimens. The key finding of the study is that the barrier performance varies by the technology and the soil type. According to the result, DSM is the most effective technology used in clay-rich soils (φ′ increased up to 4°); LPG achieved the lowest permeability (7 × 10⁻¹¹ m/s) in granular soils; and VBSWs balanced strength and impermeability, most effective in silty sands. Flow-pump tests further demonstrated that treated soils required much longer to stabilize under a constant flow rate and could sustain higher hydraulic gradients before reaching equilibrium. These findings show the importance of matching barrier technology to soil plasticity and liquidity characteristics and highlight saturation as essential for reliable laboratory evaluation. The results provide a scientific basis for selecting and designing vertical barriers in flood-preventing infrastructure, offering performance benchmarks for improving hydraulic and geotechnical structures. Full article

This study quantitatively analyzed the impact of geometric configuration of floor-drain sleeves penetrating floor slabs on the thermal insulation performance of firestop systems. Eleven square and round sleeve types were tested, with the lower-sleeve length and upper-opening area as key variables. Using identical firestop material, temperatures were measured at specific points within each sleeve. The results showed that temperatures at the water seal and trench center typically remained below 100 °C. However, in a square sleeve (with a 30 mm lower sleeve and 22,500 mm² opening), the trench center reached 254.9 °C due to heat concentration. As the lower-sleeve length increased from 30 mm to 60 mm, internal temperatures notably decreased—a trend that exhibited a strong statistical relationship, explaining 93% of the thermal variance (R² = 0.93). While larger upper openings also tended to reduce temperatures, the correlation was weaker (R² = 0.42). High-temperature responses were predominantly observed in square sleeves, which were also dimensionally less favorable—highlighting the need to distinguish geometric effects from size disadvantages. This study empirically demonstrated that sleeve geometry significantly affects fire resistance performance and provides foundational data for advancing performance-based firestop certification and developing geometry-informed analytical frameworks. Full article

We describe the first use of phage therapy in Canada for the treatment of a life-threatening periprosthetic joint infection (PJI), with successful outcome. PJI is a devastating complication of joint replacement surgery, with high morbidity and mortality. Our patient presented with early sepsis from a chronic recalcitrant multidrug-resistant (MDR) Staphylococcus epidermidis hip PJI which had repeatedly failed standard therapy. She had previously undergone 10 operations of the right hip, and only three weeks after completing a prolonged course of daptomycin following her most recent hip revision, she developed a draining sinus tract. Given the high burden of disease, inability to achieve surgical source control, and lack of antibiotic treatment options for long-term suppressive therapy, bacteriophage (phage) therapy was pursued. The patient underwent irrigation and debridement with complex flap reconstruction: intraoperative tissue cultures again yielded MDR S. epidermidis. We developed a novel phage therapy protocol for this patient, with twice daily, intra-articular and intravenous (7 × 10⁹ PFU/dose) phage delivery over a planned 14-day course. Complete healing of the wound with cessation of drainage occurred within one month after treatment. A marked improvement in right hip pain and mobility occurred within three months after treatment. Twelve months following phage treatment, there is normalization of serum inflammatory markers with diminished pain, increased mobility, and no recurrent surgery. Our patient continues to improve and is currently living independently at home, with sustained clinical control of infection. Full article

This study examines the performance of a GaN HEMT with a 150 nm gate length, fabricated on silicon carbide, across various operational modes, including direct current (DC), radio frequency (RF), and small-signal parameters. The evaluation of DC, RF, and small-signal performance under diverse bias conditions remains a relatively unexplored area of study for this specific technology. The DC characteristics revealed relatively little I_ds at zero gate and drain voltages, and the current grew as V_gs increased. Essential measurements include I_dss at 109 mA and I_dssm at 26 mA, while the peak g_m was 62 mS. Because transconductance is sensitive to variations in V_gs and V_ds, it shows “Vth _roll-off,” where Vth decreases as V_ds increases. The transfer characteristics corroborated this trend, illustrating the impact of drain-induced barrier lowering (DIBL) on threshold voltage (Vth) values, which spanned from −5.06 V to −5.71 V across varying drain-source voltages (V_ds). The equivalent-circuit technique revealed substantial non-linear behaviors in capacitances such as C_gs and C_gd concerning V_gs and V_ds, while also identifying extrinsic factors including parasitic capacitances and resistances. Series resistances (R_gs and R_gd) decreased as V_gs increased, thereby enhancing device conductivity. As V_gs approached neutrality, particularly at elevated V_ds levels, the intrinsic transconductance (g_mo) and time constants (τ_gm, τ_gs, and τ_gd) exhibited enhanced performance. f_t and f_max, which are essential for high-frequency applications, rose with decreasing V_gs and increasing V_ds. When V_gs approached −3 V, the S₂₁ and Y₂₁ readings demonstrated improved signal transmission, with peak S₂₁ values of approximately 11.2 dB. The stability factor (K), which increased with V_ds, highlighted the device’s operational limits. The robust correlation between simulation and experimental data validated the equivalent-circuit model, which is essential for enhancing design and creating RF circuits. Further examination of bias conditions would enhance understanding of the device’s performance. Full article

This paper presents the design, implementation, and experimental validation of a Condition Monitoring (CM) circuit for SiC-based Power Electronics Converters (PECs). The paper leverages in situ drain–source resistance (R_ds,on) measurements, interfaced with cloud connectivity for data processing and lifetime assessment, addressing key limitations in current state-of-the-art (SOTA) methods. Traditional approaches rely on expensive data acquisition systems under controlled laboratory conditions, making them unsuitable for real-world applications due to component variability, time delay, and noise sensitivity. Furthermore, these methods lack cloud interfacing for real-time data analysis and fail to provide comprehensive reliability metrics such as Remaining Useful Life (RUL). Additionally, the proposed CM method benefits from noise mitigation during switching transitions by utilizing delay circuits to ensure stable and accurate data capture. Moreover, collected data are transmitted to the cloud for long-term health assessment and damage evaluation. In this paper, experimental validation follows a structured design involving signal acquisition, filtering, cloud transmission, and temperature and thermal degradation tracking. Experimental testing has been conducted at different temperatures and operating conditions, considering coolant temperature variations (40 °C to 80 °C), and an output power of 7 kW. Results have demonstrated a clear correlation between temperature rise and R_ds,on variations, validating the ability of the proposed method to predict device degradation. Finally, by leveraging cloud computing, this work provides a practical solution for real-world Wide Band Gap (WBG)-based PEC reliability and lifetime assessment. Full article

Carbon nanotube field-effect transistors (CNTFETs) are becoming a strong competitor for the next generation of high-performance, energy-efficient integrated circuits due to their near-ballistic carrier transport characteristics and excellent suppression of short-channel effects. However, CNT FETs with large diameters and small band gaps exhibit obvious bipolarity, and gate-induced drain leakage (GIDL) contributes significantly to the off-state leakage current. Although the asymmetric gate strategy and feedback gate (FBG) structures proposed so far have shown the potential to suppress CNT FET leakage currents, the devices still lack scalability. Based on the analysis of the conduction mechanism of existing self-aligned gate structures, this study innovatively proposed a design strategy to extend the length of the source–drain epitaxial region (L_ext) under a vertically stacked architecture. While maintaining a high drive current, this structure effectively suppresses the quantum tunneling effect on the drain side, thereby reducing the off-state leakage current (I_off = 10⁻¹⁰ A), and has good scaling characteristics and leakage current suppression characteristics between gate lengths of 200 nm and 25 nm. For the sidewall gate architecture, this work also uses single-walled carbon nanotubes (SWCNTs) as the channel material and uses metal source and drain electrodes with good work function matching to achieve low-resistance ohmic contact. This solution has significant advantages in structural adjustability and contact quality and can significantly reduce the off-state current (I_off = 10⁻¹⁴ A). At the same time, it can solve the problem of off-state current suppression failure when the gate length of the vertical stacking structure is 10 nm (the total channel length is 30 nm) and has good scalability. Full article

In order to investigate the influence of graphene/rubber powder compound modified asphalt on the low-temperature cracking resistance of drainage asphalt mixtures, graphene/rubber powder compound modified asphalt mixtures were prepared using graphene/rubber powder compound modified asphalt for drainage asphalt mixtures, and compared with SBS-modified asphalt and rubber powder-modified asphalt, and the low-temperature cracking resistance of graphene/rubber powder compound modification asphalt mixtures was investigated through the Marshall Stability Test, Semi-circular Bending Test (SCB), and Freeze–Thaw Split Test. Research was carried out. At the same time, a scanning electric microscope (SEM) was adopted to analyze the micro-mechanism of the graphene/rubber powder compound modified asphalt mixtures under the microscopic condition. The findings showed that graphene dispersed the aggregation of rubber powder effectively in the microscopic state and improved the stability of the composite modified asphalt. The addition of graphene improved the fracture energy of rubber powder composite modified asphalt by 15.68% under the condition of −15 °C to 0 °C, which effectively slowed down the decrease of fracture energy; at −15 °C and −10 °C, the largest stresses were improved by 7.50% and 26.71%, respectively, compared to the drainage asphalt mixtures prepared as rubber powder-modified asphalt and SBS-modified asphalt. After a freeze–thaw cycle, the maximum stress decrease of graphene/rubber powder compound modified asphalt was 21.51% and 10.37% at −15 °C and 0 °C, respectively. When compared to rubber powder-modified asphalt, graphene/rubber powder compound modified asphalt significantly improved the low-intensity cracking resistance of drainage asphalt mixtures at low temperatures, slowed down the decrease of the maximum stress, and its low-temperature cracking resistance was more stable. Full article

Pseudomonas aeruginosa is a highly adaptable opportunistic pathogen with significant clinical relevance in both human and veterinary medicine. Despite its well-documented role in hospital-acquired infections in human healthcare settings, its persistence and transmission within veterinary clinics remain underexplored. This review highlights the overlooked status of veterinary facilities as environmental reservoirs and amplification points for multidrug-resistant (MDR) P. aeruginosa, emphasizing their relevance to One Health surveillance. We examine the bacterium’s environmental survival strategies, including biofilm formation, resistance to disinfectants, and tolerance to nutrient-poor conditions that facilitate the long-term colonization of moist surfaces, drains, medical equipment, and plumbing systems. Common transmission vectors are identified, including asymptomatic animal carriers, contaminated instruments, and the hands of veterinary staff. The review synthesizes current data on antimicrobial resistance in environmental isolates, revealing frequent expression of efflux pumps and mobile resistance genes, and documents the potential for zoonotic transmission to staff and pet owners. Key gaps in environmental monitoring, infection control protocols, and genomic surveillance are identified, with a call for standardized approaches tailored to the veterinary context. Control strategies, including mechanical biofilm disruption, disinfectant cycling, effluent monitoring, and staff hygiene training, are evaluated for feasibility and impact. The article concludes with a One Health framework outlining cross-species and environmental transmission pathways. It advocates for harmonized surveillance, infrastructure improvements, and intersectoral collaboration to reduce the risk posed by MDR P. aeruginosa within veterinary clinical environments and beyond. By addressing these blind spots, veterinary facilities can become proactive partners in antimicrobial stewardship and global resistance mitigation. Full article

Dynamic on-resistance (R_ON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power switching converters. Due to charge trapping effects, dynamic R_ON is always higher than in DC, a behavior known as current collapse. To study how short-time dynamics of charge trapping and release affects R_ON we use rectangular 0–5 V gate voltage pulses with durations in the 1 μs to 100 μs range. Measurements are first carried out for single pulses of increasing duration, and it is found that R_ON depends on both pulse duration and drain current I_D, being higher at shorter pulse durations and lower I_D. For a train of five pulses, R_ON decreases with pulse number, reaching a steady state after a time interval of 100 μs. The response to a five pulses train is compared to that of a square-wave signal to study the time evolution of R_ON toward a dynamic steady state. The DC R_ON is also measured, and it is a factor of ten smaller than dynamic R_ON at the same I_D. This confirms that a reduction in trapped charges takes place in DC as compared to the square-wave switching operation. Additional off-state stress tests at V_DS = 55 V reveal the presence of residual surface traps in the drain access region, leading to four times increase in R_ON in comparison to pristine devices. Finally, the dynamic R_ON is also measured by the double-pulse test (DPT) technique with inductive load, giving a good agreement with results from single-pulse measurements. Full article

P. aeruginosa strain NL201 was cultured from an urban water drain in a populated subway underpass as an environmental isolate for the ST111 global high-risk P. aeruginosa clone. In addition to carrying generally present intrinsic P. aeruginosa antibiotic resistance genes, this serotype O4 isolate also carries a set of additional acquired resistance determinants, including aadA2, bla_OXA-10, sul1, and an aac(6′)-Ib family gene. The NL201 isolate features the bla_PDC-3 allele, which was found to confer significantly higher catalytic efficiency against cefepime and imipenem compared to bla_PDC-1, as well as the potent P. aeruginosa virulence factors exoS, exoT, and algD. Serotype O4 isolates of the ST111 global high-risk P. aeruginosa clone have been reported from clinical samples in Canada and the USA, human stool samples in France, and environmental samples (such as cosmetic, hospital drains, and urban water drain) from various European countries. These observations underscore the effective dissemination of the ST111 global high-risk P. aeruginosa clone between different hosts, environments, and habitats, and they warrant targeted investigations from a One Health perspective on the possible routes of its spread and molecular evolution. Full article

As semiconductor devices approach the sub-10 nm technology node, the self-heating effect (SHE) induced by confined geometries (e.g., FinFETs and nanosheet FETs) has emerged as a critical bottleneck affecting both performance and reliability. This challenge has prompted extensive research efforts to develop advanced characterization methodologies to investigate this effect and its corresponding influence on the device’s reliability issues. In this paper, we propose reflection-based ultra-fast measurement techniques for the continuous monitoring of the self-heating effect in advanced MOSFETs. With this approach, the self-heating effect-induced degradation of transistor drain current and the real-time temperature change can be continuously captured using a digital phosphor oscilloscope on a nanosecond scale. The thermal time constant of 17 ns and the thermal resistance of 34,000 K/W have been extracted for the short channel transistors used in this study with the help of this new characterization method. This reflection-based method is useful for the fast extraction of the thermal time constant and thermal resistance and for the continuous monitoring of current degradation as well as the real-time temperature. Therefore, this new characterization method is beneficial for the evaluation of the self-heating effect in advanced ultra-scaled MOSFETs. Full article

Background/Objectives: Antimicrobial resistance is a major global health threat. Among the most problematic pathogens are carbapenem-resistant Acinetobacter baumannii and Klebsiella pneumoniae, which are significant causes of mortality in humans, particularly in the context of nosocomial infections. In companion animals, these bacteria have been reported mainly as colonizers of healthy animals or, less frequently, in community-acquired infections. However, no confirmed cases of healthcare-associated infections caused by these species have been documented in this population. This study reports the first confirmed fatal cases of infection with carbapenem-resistant A. baumannii and KPC-producing K. pneumoniae in dogs. Methods: Three hospitalized dogs developed infections associated with distinct anatomical devices, including a venous catheter, an endotracheal tube, and a Penrose drain. Bacterial isolation followed by antimicrobial susceptibility testing identified carbapenem-resistant A. baumannii and K. pneumoniae. The isolates were subsequently subjected to additional antimicrobial resistance tests and whole-genome sequencing (WGS). Results: WGS confirmed the presence of the OXA-23 carbapenemase gene in both A. baumannii isolates and the KPC-2 carbapenemase gene was detected in the K. pneumoniae strain. All three strains exhibited resistance to multiple antimicrobial classes, including β-lactams (amoxicillin-clavulanic acid, ampicillin, cephalotin, piperacillin-tazobactam, cefoxitin, ceftiofur, cefotaxime, ertapenem, imipenem and meropenem), aminoglycosides (gentamicin, neomycin), tetracyclines (doxycycline, tetracycline and oxytetracycline), fluoroquinolones (ciprofloxacin, enrofloxacin), and folate pathway antagonists (trimethoprim-sulfamethoxazole). Multilocus sequence typing identified two high-risk clones: K. pneumoniae ST340 (CC258) and A. baumannii ST15 (CC15). Single nucleotide polymorphism analysis confirmed a high degree of genetic similarity between these isolates and strains previously associated with human infections in Brazil. Conclusions: These findings provide the first evidence of fatal, healthcare-associated infections caused by these multidrug-resistant pathogens in dogs and underscore the need to strengthen surveillance and infection control practices in veterinary hospitals. Furthermore, the results raise concerns about the potential of companion animals to act as reservoirs for multidrug-resistant organisms of public health relevance. Full article

The optical, electrical, and material properties of In–Zn–O (IZO) films were optimized by adjusting the deposition power and annealing temperature. Films deposited at 125 W and annealed at 300 °C exhibited the best performance, with the lowest resistivity (1.43 × 10⁻³ Ω·cm), highest mobility (11.12 cm²/V·s), and highest carrier concentration (4.61 × 10²⁰ cm⁻³). The average transmittance and optical energy gap were 82.57% and 3.372 eV, respectively. The electrical characteristics of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) using IZO source-drain (S–D) electrodes with various sputtering powers and annealing temperatures were investigated. The optimal sputtering power of 125 W and annealing temperature of 300 °C for the IZO S–D electrodes resulted in the highest field-effect mobility (~12.31 cm²/V·s) and on current (~2.09 × 10⁻⁶ A). This improvement is attributed to enhanced carrier concentration and mobility, which result from the high In/Zn ratio, the larger grain size, and low RMS roughness in the IZO films. The parasitic contact resistance (R_SD) and channel resistance (R_CH) were analyzed using the total resistance method. R_SD decreased with increasing IZO S–D sputtering power, while R_CH reached a minimum at 125 W. Both resistances decreased significantly as the annealing temperature increased from 200 °C to 300 °C. Full article

This study proposes a novel framework integrating long short-term memory (LSTM) networks with Bayesian optimization (BO) to address process–device co-optimization challenges in trench-gate metal–oxide–semiconductor field-effect transistor (MOSFET) manufacturing. Conventional TCAD simulations, while accurate, suffer from computational inefficiency in high-dimensional parameter spaces. To overcome this, an LSTM-based TCAD proxy model is developed, leveraging hierarchical temporal dependencies to predict electrical parameters (e.g., breakdown voltage, threshold voltage) with deviations below 3.5% compared to physical simulations. The model, validated on both N-type and P-type 20 V trench MOS devices, outperforms conventional RNN and GRU architectures, reducing average relative errors by 1.78% through its gated memory mechanism. A BO-driven inverse optimization methodology is further introduced to navigate trade-offs between conflicting objectives (e.g., minimizing on-resistance while maximizing breakdown voltage), achieving recipe predictions with a maximum deviation of 8.3% from experimental data. Validation via TCAD-simulated extrapolation tests and SEM metrology confirms the framework’s robustness under extended operating ranges (e.g., 0–40 V drain voltage) and dimensional tolerances within industrial specifications. The proposed approach establishes a scalable, data-driven paradigm for semiconductor manufacturing, effectively bridging TCAD simulations with production realities while minimizing empirical trial-and-error iterations. Full article

The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices. This paper focuses on research on high-efficiency and high-reliability low-voltage p-GaN gate HEMTs with a gate–drain distance, L_GD, of 1 to 3 μm in our pilot line, manufactured on 6-inch Si using a CMOS-compatible process, with extraordinary wafer-level uniformity. Specifically, these fabricated p-GaN gate HEMTs with an L_GD of 1.5 μm demonstrate a blocking voltage of over 180 V and a high V_TH of 1.6 V and exhibit a low R_ON of 2.8 Ω·mm. It is found that device structure optimization can significantly enhance device reliability. That is, through the dedicated optimization of source field plate structure and interlayer dielectric (ILD) thickness, the dynamic ON-resistance, R_ON, degradation of devices with an L_GD of 1.5 µm was successfully suppressed from 60% to 20%, and the V_TH shift was significantly reduced from 1.1 to 0.5 V. Further, the devices also passed preliminary gate bias stress and high-voltage OFF-state stress tests, providing guidance for preparing high-performance, low-voltage p-GaN gate HEMTs in the future. Full article