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22 pages, 2432 KB  
Article
Open-Circuit Fault Location Method of Lightweight Modular Multilevel Converter for Deloading Operation of Offshore Wind Power
by Zhehao Fang and Haoyang Cui
Electronics 2026, 15(6), 1277; https://doi.org/10.3390/electronics15061277 - 18 Mar 2026
Cited by 1 | Viewed by 251
Abstract
In offshore wind farms, modular multilevel converters (MMCs) may operate under a deloading condition to accommodate wind-speed volatility and dispatch constraints. Here, deloading is defined as transmitted power < 0.2 pu (scenario S2, low-power non-reversal). Under this condition, submodule capacitor-voltage fault signatures are [...] Read more.
In offshore wind farms, modular multilevel converters (MMCs) may operate under a deloading condition to accommodate wind-speed volatility and dispatch constraints. Here, deloading is defined as transmitted power < 0.2 pu (scenario S2, low-power non-reversal). Under this condition, submodule capacitor-voltage fault signatures are weak and exhibit strong operating-point-dependent drift, which degrades conventional threshold-based or offline-trained methods. We propose a lightweight switch-level IGBT open-circuit fault localization framework for deloaded MMCs. Wavelet packet decomposition is used to extract time–frequency energy features, and principal component analysis reduces feature dimensionality for lightweight deployment. An enhanced XGBoost model further integrates severity-index weighting to alleviate class imbalance and incremental learning to adapt to condition drift induced by wind-power fluctuations. MATLAB2024b/Simulink results show 99.6% accuracy in S2 with less than 2 ms inference latency, and robust performance in extended scenarios including partial-power operation and power reversal. Full article
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18 pages, 3768 KB  
Article
Variable Cutoff Frequency Low-Pass Attenuator Based on Memristor with Sharp Roll-Off Characteristic
by Jie Lian, Xingyu Liao, Junjie Wang, Shuang Liu, Yan Wang and Yang Liu
Electronics 2026, 15(6), 1164; https://doi.org/10.3390/electronics15061164 - 11 Mar 2026
Viewed by 220
Abstract
Frequency-selective attenuation is widely needed in integrated analog front-ends, yet conventional on-chip RC low-pass filters occupy unfeasibly large silicon areas for low-frequency cutoffs and inherently introduce cumulative phase lag. Motivated by the nonlinear, frequency-dependent state evolution of memristive devices, this work experimentally demonstrates [...] Read more.
Frequency-selective attenuation is widely needed in integrated analog front-ends, yet conventional on-chip RC low-pass filters occupy unfeasibly large silicon areas for low-frequency cutoffs and inherently introduce cumulative phase lag. Motivated by the nonlinear, frequency-dependent state evolution of memristive devices, this work experimentally demonstrates a highly compact, capacitor-free memristor–resistor network that functions as a variable-cutoff, zero-phase-lag resistive attenuator. An Au/HfO2/Au memristor (15 µm × 15 µm) is connected in series with a load resistor and characterized over a wide frequency range. By leveraging the finite time constant of internal ionic drift, the attenuation bandwidth is strictly programmable via the device’s initial resistance. Cutoff frequencies of approximately 10 Hz, 1 kHz, and 10 kHz are achieved for initial resistances of 400 kΩ±30 kΩ, 300 kΩ±30 kΩ, and 200 kΩ±30 kΩ, respectively. Remarkably, the nonlinear state-switching mechanism enables a steep post-cutoff attenuation rate approaching −60 dB/dec—equivalent to a cascaded third-order RC network—using only a single nanoscale device. Rather than functioning as a strictly linear time-invariant (LTI) filter, the proposed circuit operates as a state-adaptive edge-processor. Its inherent amplitude-dependent dynamics and total absence of reactive poles make it exceptionally suited for highly specialized, area-constrained applications, including zero-phase closed-loop noise suppression, frequency-to-amplitude conversion, and amplitude-aware event-driven sensory preprocessing. Full article
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30 pages, 4600 KB  
Article
Fault-Resilient Flat-Top Current Control for Large-Scale Electromagnetic Forming Using Staged-DQN
by Manli Huang, Xiaokang Sun, Jiqiang Wang, Jiajie Chen and Feifan Yu
Appl. Sci. 2026, 16(5), 2478; https://doi.org/10.3390/app16052478 - 4 Mar 2026
Viewed by 247
Abstract
Quasi-Static Electromagnetic Forming (QSEF) technology utilizes stable magnetic fields generated by long-pulse flat-top currents to achieve non-contact, high-precision forming of large-scale integral aerospace components. To meet the immense energy demands of large-scale component forming, the drive system requires instantaneous power output capabilities at [...] Read more.
Quasi-Static Electromagnetic Forming (QSEF) technology utilizes stable magnetic fields generated by long-pulse flat-top currents to achieve non-contact, high-precision forming of large-scale integral aerospace components. To meet the immense energy demands of large-scale component forming, the drive system requires instantaneous power output capabilities at the Gigawatt level. Consequently, the precise regulation of ultra-high flat-top current waveforms becomes a critical challenge for ensuring forming quality. However, traditional meta-heuristic methods, such as Genetic Algorithms (GAs) and Particle Swarm Optimization (PSO), exhibit limited adaptability and robustness when addressing strong geometric nonlinearities induced by workpiece deformation and the performance degradation of pulsed power modules. To address engineering challenges such as capacitor degradation, inductance drift, and module failures, this paper proposes a Staged Deep Reinforcement Learning (Staged-DQN) adaptive current control framework. This framework decouples the discharge scheduling into “heuristic rapid rise” and “DQN fine compensation” stages, adaptively optimizing triggering timing to suppress plateau oscillations and compensate for energy deficits caused by faults. Simulation results demonstrate that under typical high-energy operating conditions, the proposed method achieves superior tracking accuracy compared to traditional PSO in fault-free scenarios. In extreme scenarios involving 25 faulty modules, the Mean Absolute Percentage Error (MAPE) is maintained between 1.13% and 1.80%, significantly lower than the 2.65–3.52% of the baseline DQN. This study validates the effectiveness of the proposed method in enhancing waveform quality and system fault tolerance, offering a reliable intelligent control solution for large-scale electromagnetic manufacturing equipment. Full article
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16 pages, 1897 KB  
Article
Frequency Dependence of Air Breakdown and Investigation of Its Electro-Optical Characteristics
by Ya Wang, Bin Liu, Wenbin Zhao, Xinzhe Yu, Jiangang Bi and Chao Ding
Energies 2026, 19(5), 1229; https://doi.org/10.3390/en19051229 - 1 Mar 2026
Viewed by 299
Abstract
With the expanding frequency range of power equipment, understanding the frequency-dependent insulation performance of air becomes crucial. To address this, this paper establishes an integrated electrical–optical measurement platform for air breakdown to study the variation patterns of electrical and spectral characteristics of air [...] Read more.
With the expanding frequency range of power equipment, understanding the frequency-dependent insulation performance of air becomes crucial. To address this, this paper establishes an integrated electrical–optical measurement platform for air breakdown to study the variation patterns of electrical and spectral characteristics of air breakdown at different frequencies. The effects and underlying mechanisms of different frequencies (20 Hz, 50 Hz, and 1 kHz) on the breakdown voltage are explored. Experimental results indicate that the air breakdown voltage increases with frequency as follows: from 17.7 kV at 20 Hz to 18.0 kV at 50 Hz (1.7% increase) and further to 18.9 kV at 1 kHz (5.0% increase from 50 Hz), representing a total increase of 6.8% across the 20 Hz to 1 kHz range. Regarding spectral characteristics, the spectral line intensity enhances with an increase in frequency. Compared to 20 Hz and 50 Hz, the spectral lines of nitrogen ions and oxygen ions become distinctly visible at 1 kHz, the Stark broadening phenomenon intensifies, and transitions from higher vibrational energy levels are enhanced relative to those from lower levels. Analysis via the Boltzmann plot method reveals a negative correlation between electron temperature (Te) and frequency, while the ionization degree (η) shows a positive correlation. Concurrently, the electron drift velocity (vd) increases with frequency, whereas the mean free path decreases (λ). Based on the parallel-plate capacitor model, the air breakdown under the experimental conditions of this study is dominated by collision ionization. As frequency increases, dielectric recovery slows down, and the memory effect strengthens. The interplay between these two competing factors leads to an increase in breakdown voltage with an increase in frequency within the 20 Hz to 1 kHz range. The findings of this study demonstrate that air breakdown exhibits significant frequency dependence, and its breakdown voltage shows statistical distribution characteristics (Weibull parameters) that vary with frequency. This article provides a reference basis for the design of sinusoidal air insulation in the 20 Hz to 1 kHz frequency range. Full article
(This article belongs to the Section F6: High Voltage)
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18 pages, 1281 KB  
Article
Defect Characterization of the SiO2/Si Interface Investigated by Drift-Assisted Positron Annihilation Lifetime Spectroscopy
by Ricardo Helm, Werner Egger, Catherine Corbel, Peter Sperr, Maik Butterling, Andreas Wagner, Maciej Oskar Liedke, Eric Hirschmann, Johannes Mitteneder, Michael Mayerhofer, Kangho Lee, Georg S. Duesberg, Günther Dollinger and Marcel Dickmann
Nanomaterials 2026, 16(3), 156; https://doi.org/10.3390/nano16030156 - 23 Jan 2026
Viewed by 565
Abstract
This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and inversion conditions, revealing [...] Read more.
This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and inversion conditions, revealing that the internal electric field can drift-transport positrons either toward or away from the SiO2/Si interface, acting as a diffusion barrier or support, respectively. Key positron drift-transport parameters were derived from lifetime data, and the influence of the non-linear electric field on positron trapping was analyzed. The comparison of the presented results to our previous oxide-side drift experiment on the same metal-oxide–silicon capacitor indicates that the interface exhibits two distinct sides, with different types of defects: void-like and vacancy-like (Pb centers). The positron data also suggest that the charge state of the Pb centers likely varies with the operation mode of the MOS, which affects their positron trapping behavior. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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17 pages, 4548 KB  
Article
A Small Linear Accelerator for Charged Microparticles
by Marcel Bauer, Yanwei Li, Ralf Srama, Florian Behrens, Anna Mocker, Felix Schäfer, Jonas Simolka and Heiko Strack
Appl. Sci. 2025, 15(21), 11709; https://doi.org/10.3390/app152111709 - 2 Nov 2025
Viewed by 1287
Abstract
Researching cosmic dust requires terrestrial facilities for accelerating analogues of different sizes and masses. To address the area of very lightweight particles, electrostatic accelerators like Van de Graaf accelerators or Linear Accelerators (LINACs) have proven adequate. This article describes the components, dimensions, working [...] Read more.
Researching cosmic dust requires terrestrial facilities for accelerating analogues of different sizes and masses. To address the area of very lightweight particles, electrostatic accelerators like Van de Graaf accelerators or Linear Accelerators (LINACs) have proven adequate. This article describes the components, dimensions, working principle and attributes of a variable frequency switched 6-stage LINAC of 120 kilovolts (kV) potential based at the Institute of Space Systems, University of Stuttgart. It utilizes negative voltages, no storage capacitors, isometric drift tubes, one semiconductor-based high-voltage switch per stage and there is no voltage drop during acceleration. The particle rate can reach up to 33 particles per second. By setting a target speed window, it autonomously chooses the right number of acceleration stages to meet that requirement, if possible. Micron-sized iron particles were accelerated successfully, achieving speed increase rates of up to three times the pre-LINAC speed and a total speed of up to 1300 m/s. This platform provides a new tool for dust sensor calibration, impact physics and material surface processing due to its ability to bring particles of different charge-to-mass ratios to a defined target speed. Full article
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19 pages, 4201 KB  
Article
Implementation of an SS-Compensated LC-Thermistor Topology for Passive Wireless Temperature Sensing
by Seyit Ahmet Sis and Yeliz Dikerler Kozar
Sensors 2025, 25(20), 6316; https://doi.org/10.3390/s25206316 - 13 Oct 2025
Cited by 1 | Viewed by 827
Abstract
This paper presents a passive wireless temperature sensor based on an SS-compensated LC-thermistor topology. The system consists of two magnetically coupled LC tanks—each composed of a coil and a series capacitor—forming a series–series (SS) compensation network. The secondary side includes a negative temperature [...] Read more.
This paper presents a passive wireless temperature sensor based on an SS-compensated LC-thermistor topology. The system consists of two magnetically coupled LC tanks—each composed of a coil and a series capacitor—forming a series–series (SS) compensation network. The secondary side includes a negative temperature coefficient (NTC) thermistor connected in series with its coil and capacitor, acting as a temperature-dependent load. Magnetically coupled resonant systems exhibit different coupling regimes: weak, critical, and strong. When operating in the strongly coupled regime, the original resonance splits into two distinct frequencies—a phenomenon known as bifurcation. At these split resonance frequencies, the load impedance on the secondary side is reflected as pure resistance at the primary side. In the SS topology, this reflected resistance is equal to the thermistor resistance, enabling precise wireless sensing. The advantage of the SS-compensated configuration lies in its ability to map changes in the thermistor’s resistance directly to the input impedance seen by the reader circuit. As a result, the sensor can wirelessly monitor temperature variations by simply tracking the input impedance at split resonance points. We experimentally validate this property on a benchtop prototype using a one-port VNA measurement, demonstrating that the input resistance at both split frequencies closely matches the expected thermistor resistance, with the observed agreement influenced by the parasitic effects of RF components within the tested temperature range. We also demonstrate that using the average readout provides first-order immunity to small capacitor drift, yielding stable readings. Full article
(This article belongs to the Section Physical Sensors)
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18 pages, 2288 KB  
Article
Defect Studies in Thin-Film SiO2 of a Metal-Oxide-Silicon Capacitor Using Drift-Assisted Positron Annihilation Lifetime Spectroscopy
by Ricardo Helm, Werner Egger, Catherine Corbel, Peter Sperr, Maik Butterling, Andreas Wagner, Maciej Oskar Liedke, Johannes Mitteneder, Michael Mayerhofer, Kangho Lee, Georg S. Duesberg, Günther Dollinger and Marcel Dickmann
Nanomaterials 2025, 15(15), 1142; https://doi.org/10.3390/nano15151142 - 23 Jul 2025
Cited by 2 | Viewed by 1299
Abstract
This work investigates the impact of an internal electric field on the annihilation characteristics of positrons implanted in a 180(10)nm SiO2 layer of a Metal-Oxide-Silicon (MOS) capacitor, using Positron Annihilation Lifetime Spectroscopy (PALS). By varying the gate voltage, [...] Read more.
This work investigates the impact of an internal electric field on the annihilation characteristics of positrons implanted in a 180(10)nm SiO2 layer of a Metal-Oxide-Silicon (MOS) capacitor, using Positron Annihilation Lifetime Spectroscopy (PALS). By varying the gate voltage, electric fields up to 1.72MV/cm were applied. The measurements reveal a field-dependent suppression of positronium (Ps) formation by up to 64%, leading to an enhancement of free positron annihilation. The increase in free positrons suggests that vacancy clusters are the dominant defect type in the oxide layer. Additionally, drift towards the SiO2/Si interface reveals not only larger void-like defects but also a distinct population of smaller traps that are less prominent when drifting to the Al/SiO2 interface. In total, by combining positron drift with PALS, more detailed insights into the nature and spatial distribution of defects within the SiO2 network and in particular near the SiO2/Si interface are obtained. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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23 pages, 888 KB  
Article
Active Feedback-Driven Defect-Band Steering in Phononic Crystals with Piezoelectric Defects: A Mathematical Approach
by Soo-Ho Jo
Mathematics 2025, 13(13), 2126; https://doi.org/10.3390/math13132126 - 29 Jun 2025
Cited by 4 | Viewed by 990
Abstract
Defective phononic crystals (PnCs) have garnered significant attention for their ability to localize and amplify elastic wave energy within defect sites or to perform narrowband filtering at defect-band frequencies. The necessity for continuously tunable defect characteristics is driven by the variable excitation frequencies [...] Read more.
Defective phononic crystals (PnCs) have garnered significant attention for their ability to localize and amplify elastic wave energy within defect sites or to perform narrowband filtering at defect-band frequencies. The necessity for continuously tunable defect characteristics is driven by the variable excitation frequencies encountered in rotating machinery. Conventional tuning methodologies, including synthetic negative capacitors or inductors integrated with piezoelectric defects, are constrained to fixed, offline, and incremental adjustments. To address these limitations, the present study proposes an active feedback approach that facilitates online, wide-range steering of defect bands in a one-dimensional PnC. Each defect is equipped with a pair of piezoelectric sensors and actuators, governed by three independently tunable feedback gains: displacement, velocity, and acceleration. Real-time sensor signals are transmitted to a multivariable proportional controller, which dynamically modulates local electroelastic stiffness via the actuators. This results in continuous defect-band frequency shifts across the entire band gap, along with on-demand sensitivity modulation. The analytical model that incorporates these feedback gains has been demonstrated to achieve a level of agreement with COMSOL benchmarks that exceeds 99%, while concurrently reducing computation time from hours to seconds. Displacement- and acceleration-controlled gains yield predictable, monotonic up- or down-shifts in defect-band frequency, whereas the velocity-controlled gain permits sensitivity adjustment without frequency drifts. Furthermore, the combined-gain operation enables the concurrent tuning of both the center frequency and the filtering sensitivity, thereby facilitating an instantaneous remote reconfiguration of bandpass filters. This framework establishes a new class of agile, adaptive ultrasonic devices with applications in ultrasonic imaging, structural health monitoring, and prognostics and health management. Full article
(This article belongs to the Section E2: Control Theory and Mechanics)
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15 pages, 4508 KB  
Article
Three-Channel Fully Integrated Galvanic Isolation Interface in GaN Technology
by Katia Samperi, Nunzio Spina, Alessandro Castorina and Giuseppe Palmisano
Electronics 2025, 14(7), 1403; https://doi.org/10.3390/electronics14071403 - 31 Mar 2025
Viewed by 1398
Abstract
This paper presents a three-channel galvanic isolation interface in GaN technology. Driver, diagnostic, and control channels have been implemented in a two-die integrated system to perform an isolation interface for a high-performance power switching system. Chip-to-chip communication has been used, which is based [...] Read more.
This paper presents a three-channel galvanic isolation interface in GaN technology. Driver, diagnostic, and control channels have been implemented in a two-die integrated system to perform an isolation interface for a high-performance power switching system. Chip-to-chip communication has been used, which is based on planar micro-antennas with on–off keying modulated RF carriers. This approach provides a high isolation rating by properly setting the distance between chips. Various innovation aspects are adopted with respect to previously published works. They mainly involve the receiver robustness thanks to the switched-capacitor bias control, a bidirectional data channel implementation for power section diagnostic, and a duty cycle distortion compensation for accurate PWM signal. Driver and control channels use RF carriers of about 2 GHz and 0.9 GHz and achieve 2 MHz and 0.5 MHz measured pulse width modulation signals, respectively. The bidirectional channel adopts an RF carrier of about 400 MHz and exhibits a maximum measured data rate as high as 10 Mb/s. Thanks to the extensive use of switched-capacitor circuit solutions, well-controlled behavior is achieved against the large process tolerances and temperature drifts of the GaN technology. The isolation interface is supplied at 6 V and occupies a die area of 7.6 mm2 for each chip. Full article
(This article belongs to the Special Issue Gallium Nitride (GaN)-Based Power Electronic Devices and Systems)
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17 pages, 9583 KB  
Article
A CMOS Switched Capacitor Filter Based Potentiometric Readout Circuit for pH Sensing System
by Shanthala Lakshminarayana, Revathy Perumalsamy, Chenyun Pan, Sungyong Jung, Hoon-Ju Chung and Hyusim Park
J. Low Power Electron. Appl. 2025, 15(1), 3; https://doi.org/10.3390/jlpea15010003 - 19 Jan 2025
Cited by 2 | Viewed by 2582
Abstract
This work presents a potentiometric readout circuit for a pH-sensing system in an oral healthcare device. For in vivo applications, noise, area, and power consumption of the readout electronics play critical roles. While CMOS amplifiers are commonly used in readout circuits for these [...] Read more.
This work presents a potentiometric readout circuit for a pH-sensing system in an oral healthcare device. For in vivo applications, noise, area, and power consumption of the readout electronics play critical roles. While CMOS amplifiers are commonly used in readout circuits for these applications, their applicability is limited due to non-deterministic noises such as flicker and thermal noise. To address these challenges, the Correlated Double Sampler (CDS) topology is widely employed as a sampled-data circuit for potentiometric readout, effectively eliminating DC offset and drift, thereby reducing overall noise. Therefore, this work introduces a novel potentiometric readout circuit realized with CDS and a switched-capacitor-based low-pass filter (SC-LPF) to enhance the noise characteristic of overall circuit. The proposed readout circuit is implemented in an integrated circuit using 0.18 µm CMOS process, which occupies an area of 990 µm × 216 µm. To validate the circuit performances, simulations were conducted with a 5 pF load and a 1 MHz input clock. The readout circuit operates with a supply voltage range ±1.65 V and linearly reproduces the pH sensor output of ±1.5 V. Noise measured with a 1 MHz sampling clock shows 0.683 µVrms, with a power consumption of 124.1 µW. Full article
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21 pages, 21508 KB  
Article
Induction Coil Design Considerations for High-Frequency Domestic Cooktops
by Ahmet Erken and Atiye Hulya Obdan
Appl. Sci. 2024, 14(17), 7996; https://doi.org/10.3390/app14177996 - 7 Sep 2024
Cited by 2 | Viewed by 9180
Abstract
The use of wide band gap (WBG) semiconductor switches in power converters is increasing day by day due to their superior chemical and physical properties, such as electrical field strength, drift speed, and thermal conductivity. These new-generation power switches offer advantages over traditional [...] Read more.
The use of wide band gap (WBG) semiconductor switches in power converters is increasing day by day due to their superior chemical and physical properties, such as electrical field strength, drift speed, and thermal conductivity. These new-generation power switches offer advantages over traditional induction cooker systems, such as fast and environmentally friendly heating. The size of passive components can be reduced, and the decreasing inductance value of induction coils and capacitors with low ESR (equivalent series resistance) values contributes to total efficiency. Other design parameters, such as passive components with lower values, heatsinks with low volumes, cooling fans with low power, and induction coils with fewer turns, can offset the cost of WBG power devices. High-frequency operation can also be effective in heating non-ferromagnetic materials like aluminum and copper, making them suitable for heating these types of pans without complex induction coil and power converter designs. However, the use of these new generation power switches necessitates a re-examination of induction coil design. High switching frequency leads to a high resonance frequency in the power converter, which requires lower-value passive components compared to conventional cookers. The most important component is the induction coil, which requires fewer turns and magnetic cores. This study examines the induction heating equivalent circuit, discusses the general structure and design parameters of the induction coil, and performs FEM (finite element method) analyses using Ansys Maxwell. The results show that the induction coil inductance value in new-generation cookers decreases by 80% compared to traditional cookers, and the number of windings and magnetic cores decreases by 50%. These analyses, performed for high-power applications, are also performed for low-power applications. While the inductance value of the induction coil is 90 μH at low frequencies, it is reduced to the range of 5 μH to 20 μH at high frequencies. The number of windings is reduced by half or a quarter. The new-generation cooker system experimentally verifies the coil design based on the parameters derived from the analysis. Full article
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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16 pages, 1309 KB  
Article
A Sub-0.01 °C Resolution All-CMOS Temperature Sensor with 0.43 °C/−0.38 °C Inaccuracy and 1.9 pJ · K2 Resolution FoM for IoT Applications
by Yixiao Sun, Jie Cheng, Zhizhong Luo and Yanhan Zeng
Micromachines 2024, 15(9), 1132; https://doi.org/10.3390/mi15091132 - 6 Sep 2024
Cited by 2 | Viewed by 2216
Abstract
A high resolution, acceptable accuracy and low power consumption time-domain temperature sensor is proposed and simulated in this paper based on a 180 nm standard CMOS technology. A diode stacking structure is introduced to enhance the accuracy of the temperature sensing core. To [...] Read more.
A high resolution, acceptable accuracy and low power consumption time-domain temperature sensor is proposed and simulated in this paper based on a 180 nm standard CMOS technology. A diode stacking structure is introduced to enhance the accuracy of the temperature sensing core. To improve the resolution of the sensor, a dual-input capacitor multiplexing voltage-to-time converter (VTC) is implemented. Additionally, a low-temperature drift voltage-mode relaxation oscillator (ROSC) is proposed, effectively reducing the large oscillation frequency drift caused by significant temperature impacts on delay errors. The simulated results show that the resolution is as high as 0.0071 °C over 0∼120 °C with +0.43 °C/−0.38 °C inaccuracy and 1.9 pJ · K2 resolution FoM, consuming only 1.48 μW at a 1.2 V supply voltage. Full article
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23 pages, 17186 KB  
Article
Extension of Operating Range in Hybrid Cascaded H-Bridge Inverters with Capacitor Voltage Balancing Capability
by Abhilash Tirupathi, Jonathan Pribadi, Min-Seok Kim and Dong-Choon Lee
Sensors 2024, 24(3), 991; https://doi.org/10.3390/s24030991 - 3 Feb 2024
Cited by 4 | Viewed by 2602
Abstract
In this article, a generalized control scheme is proposed to extend the operating range of three-phase hybrid cascaded H-bridge (HCHB) inverters into various voltage levels without necessitating alterations to the core structure or the integration of additional H-bridge submodules. This study addresses a [...] Read more.
In this article, a generalized control scheme is proposed to extend the operating range of three-phase hybrid cascaded H-bridge (HCHB) inverters into various voltage levels without necessitating alterations to the core structure or the integration of additional H-bridge submodules. This study addresses a critical challenge related to capacitor voltage drift at various modulation indices and power factors, which is a serious impediment to various applications. To overcome this challenge, a novel balancing control scheme has been developed based on the injection of two independent offset voltages to simultaneously control the DC-link and flying capacitors. A distinctive aspect of the proposed technique involves adjusting the common reference voltage to attain the nearest level in the same cluster, thereby mitigating the insufficiency of redundant switching states. The effectiveness of the proposed technique to regulate the capacitor voltages at various operating conditions has been verified through simulation and experimental results. Full article
(This article belongs to the Special Issue Advanced Sensing and Control Technologies in Power Electronics)
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16 pages, 8015 KB  
Article
Pulse Width Modulation-Controlled Switching Impedance for Wireless Power Transfer
by Bole Ma, Lin Chai, Jianghua Lu and Shixiong Sun
Energies 2023, 16(24), 8103; https://doi.org/10.3390/en16248103 - 16 Dec 2023
Cited by 1 | Viewed by 2123
Abstract
The exceptional performance of the wireless power transfer (WPT) system hinges on its resonant state. However, the capacitance drift caused by manufacturing tolerance and temperature will result in a state of detuning. In this manuscript, a PWM-controlled switched impedance (PCSI) topology that can [...] Read more.
The exceptional performance of the wireless power transfer (WPT) system hinges on its resonant state. However, the capacitance drift caused by manufacturing tolerance and temperature will result in a state of detuning. In this manuscript, a PWM-controlled switched impedance (PCSI) topology that can express inductive and capacitive is proposed to eliminate line mismatches resulting from the above factors. Firstly, the PCSI topology is introduced, and its placement is determined based on the characteristics of the inductor–capacitor–capacitor series (LCC-S) network. Secondly, the working principle of the proposed topology is introduced. Finally, the simulation and experimental results show that the system could be restored to its resonant state by adjusting the PCSI topology. Under different values of resonant capacitors, the PCSI topology enhances the output power of the system by 40 W~150 W compared to the previous state, and the efficiency is increased by 9~13%. Full article
(This article belongs to the Section F: Electrical Engineering)
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