Search Results (75)

This paper presents a novel transposed MRAM architecture (WinEdge) specifically optimized for Winograd convolution acceleration in edge computing devices. Leveraging Magnetic Tunnel Junctions (MTJs) with Spin Hall Effect (SHE)-assisted Spin-Transfer Torque (STT) writing, the proposed design enables a single SHE current to simultaneously write data to four MTJs, substantially reducing power consumption. Additionally, the integration of stacked MTJs significantly improves storage density. The proposed WinEdge efficiently supports both standard and transposed data access modes regardless of bit-width, achieving up to 36% lower power, 47% reduced energy consumption, and 28% faster processing speed compared to existing designs. Simulations conducted in 45 nm CMOS technology validate its superiority over conventional SRAM-based solutions for convolutional neural network (CNN) acceleration in resource-constrained edge environments. Full article

Magnetic random-access memory, recognized as a breakthrough in spintronics, demonstrates substantial potential for next-generation nonvolatile memory and logic devices due to its unique magnetization-switching mechanism. However, realizing reliable perpendicular magnetization switching via spin–orbit torque necessitates an externally applied in-plane magnetic bias, a requirement that complicates integration in high-density device architectures. This study proposes a novel device architecture where geometric asymmetry engineering in an interlayer design generates an intrinsic equivalent in-plane magnetic field. By strategically introducing a non-symmetrical spacer between the heavy metal and ferromagnetic layers, we establish deterministic magnetization reversal while eliminating external field dependency. Furthermore, the energy barrier during magnetization switching is dynamically adjusted by applying a voltage across a perpendicular-anisotropy magnetic tunnel junction, leveraging the voltage-controlled magnetic anisotropy effect. We established a physics-driven compact model to assess the design and performance of voltage-controlled spin–orbit torque magnetic tunnel junction (VCSOT-MTJ) devices. Simulations reveal that the introduction of a minimally asymmetric light metal layer effectively resolves the issue of incomplete switching in field-free spin-orbit torque systems. Full article

A 2–4 decoder based on all-spin logic (ASL) and magnetic tunnel junction (MTJ) is proposed. The decoder employs five-input minority gates to realize three-input NOR gates, which reduces the circuit size compared to the three-input minority gates. Simultaneously, the inputs of the original and reverse variables are implemented by initializing the MTJ fixed layer magnetization in different directions, which avoids the use of inverters. In addition, the 2–4 decoder adopts a single-input single-fan-out (SISF) structure, which reduces the channel length. To illustrate the advantages of the five-input minority gate, inverter-free structure, and SISF structures in designing the proposed 2–4 decoder, a second 2–4 decoder is proposed that uses three-input minority gates, inverters, and a single-input multiple-fan-out structure. Compared with the second decoder, the first decoder has the layout area reduced to 37.9%, the total channel length reduced to 40.8%, and the number of clock cycles reduced to one-third. Importantly, the design methods used in this work, such as multi-input minority gates, SISF structure, and inverter-free structure, provide an interesting approach for designing large-scale ASL logic circuits. Full article

This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with single-barrier magnetic tunnel junction (SMTJ) and double-barrier magnetic tunnel junction (DMTJ). Our study relies on a temperature-aware macrospin-based Verilog-A compact model for MTJ devices and a 65 nm commercial process design kit (PDK) calibrated down to 77 K under silicon measurements. The DMTJ-based SIMPLY demonstrates a significant improvement in read margin at 77 K, overcoming the conventional SIMPLY scheme at room temperature (300 K) by approximately 2.3 X. When implementing logic operations with the SIMPLY scheme operating at 77 K, the DMTJ-based scheme assures energy savings of about 69%, as compared to its SMTJ-based counterpart operating at 77 K. Overall, our results prove that the SIMPLY scheme at cryogenic conditions is a promising solution for reliable and energy-efficient logic-in-memory (LIM) architectures. Full article

Background/Objectives: the purpose of this study was to determine the contributions of mechanical, neural, morphological, and muscle quality factors on individual differences in the maximal ankle dorsiflexion range of motion (ROM). Methods: A sample of 41 university students performed passive-dorsiflexion and morphological measurements. In the passive-dorsiflexion measurement, while the ankle was passively dorsiflexed, maximal dorsiflexion ROM was measured in addition to passive torque at a given angle and muscle–tendon junction (MTJ) displacement during the last 13° as mechanical factors, and stretch tolerance and muscle activation were measured as neural factors. In morphological measurements, the cross-sectional area, muscle thickness, muscle fascicle length, and pennation angle were measured. In addition, the echo intensity was evaluated as muscle quality. Subjects were divided into three groups (flexible, moderate, and tight) using the value of the maximal dorsiflexion ROM. Results: Maximal dorsiflexion ROM and stretch tolerance were greater in the flexible group than those in the moderate and tight groups. MTJ displacement was smaller in the flexible group than those in the moderate and tight groups. Stepwise multiple regression analysis revealed that stretch tolerance and passive torque at a given angle were selected as parameters to explain the maximal dorsiflexion ROM (adjusted R² = 0.83). Conclusions: these results indicate that individual differences in maximal ankle dorsiflexion ROM are primarily related to mechanical and neural factors. Full article

Defects in the free layer are considered to be the main cause of the balloon effect, but there is little insight into the synthetic antiferromagnetic (SAF) layer. To address this shortcoming, in this work, an optimized SAF layer was introduced in the perpendicular magnetic tunneling junction (pMTJ) stack to eliminate the low-probability bifurcated-switching phenomenon. The results indicated that the Hf field in the film stack improved significantly from ~5700 Oe to ~7500 Oe. A magnetoresistive random access memory (MRAM) test chip was also fabricated with a 300 mm process, resulting in a significantly improved ballooning effect. The results also indicated that the switching voltage decreased by 18.6% and the writing energy decreased by 33.7%. In addition, the low-probability stray field along the x-axis was thought to be the main cause of the ballooning effect, and was experimentally optimized for the first time by enhancing the SAF layer. This work provides a new perspective on spin-flipping dynamics, facilitating a deeper comprehension of the internal mechanism and helping to secure improvements in MRAM performance. Full article

With the outstanding growth of Internet of Things (IoT) devices, security and power efficiency of integrated circuits can no longer be overlooked. Current approved standards for cryptographic algorithms are not suitable for constrained environments. In this context, the National Institute of Standards and Technology (NIST) started a lightweight cryptography (LWC) competition to develop new algorithm standards that can be fit into small devices. In 2023, NIST has decided to standardize the Ascon family for LWC. This algorithm has been designed to be more resilient to side-channel and fault-based analysis. Nonetheless, hardware implementations of Ascon have been broken by multiple statistical fault analysis and power analysis. These attacks have underlined the necessity to develop adapted countermeasures to side-channel and perturbation-based attacks. However, existing countermeasures are power and area consuming. In this article, we propose a new countermeasure for the Ascon cipher that does not significantly increase the area and power consumption. Our architecture relies on the nonvolatile feature of the Magnetic Tunnel Junction (MTJ) that is the single element of the emerging Magnetic Random Access Memories (MRAM). The proposed circuit removes the bias exploited by statistical attacks. In addition, we have duplicated and complemented the permutation of Ascon to enhance the power analysis robustness of the circuit. Besides the security aspect, our circuit can save current manipulated data, ensuring energy saving from 11% to 32.5% in case of power failure. The area overhead, compared to an unprotected circuit, is $\times 2.43$. Full article

In this work, we focus on a detailed study of the role of each component layer in the multilayer structure of a magnetic tunnel junction (MTJ) as well as the analysis of the effects that the deposition parameters of the thin films have on the performance of the structure. Various techniques including atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to investigate the effects of deposition parameters on the surface roughness and thickness of individual layers within the MTJ structure. Furthermore, this study investigates the influence of thin films thickness on the magnetoresistive properties of the MTJ structure, focusing on the free ferromagnetic layer and the barrier layer (MgO). Through systematic analysis and optimization of the deposition parameters, this study demonstrates a significant improvement in the tunnel magnetoresistance (TMR) of the MTJ structure of 10% on average, highlighting the importance of precise control over thin films properties for enhancing device performance. Full article

Spintronics, utilizing both the charge and spin of electrons, benefits from the nonvolatility, low switching energy, and collective behavior of magnetization. These properties allow the development of magnetoresistive random access memories, with magnetic tunnel junctions (MTJs) playing a central role. Various spin logic concepts are also extensively explored. Among these, spin logic devices based on the motion of magnetic domain walls (DWs) enable the implementation of compact and energy-efficient logic circuits. In these devices, DW motion within a magnetic track enables spin information processing, while MTJs at the input and output serve as electrical writing and reading elements. DW logic holds promise for simplifying logic circuit complexity by performing multiple functions within a single device. Nevertheless, the demonstration of DW logic circuits with electrical writing and reading at the nanoscale is still needed to unveil their practical application potential. In this review, we discuss material advancements for high-speed DW motion, progress in DW logic devices, groundbreaking demonstrations of current-driven DW logic, and its potential for practical applications. Additionally, we discuss alternative approaches for current-free information propagation, along with challenges and prospects for the development of DW logic. Full article

The muscle–tendon junction (MTJ) is a highly specific tissue interface where the muscle’s fascia intersects with the extracellular matrix of the tendon. The MTJ functions as the particular structure facilitating the transmission of force from contractive muscle fibers to the skeletal system, enabling movement. Considering that the MTJ is continuously exposed to constant mechanical forces during physical activity, it is susceptible to injuries. Ruptures at the MTJ often accompany damage to both tendon and muscle tissues. In this review, we attempt to provide a precise definition of the MTJ, describe its subtle structure in detail, and introduce therapeutic approaches related to MTJ tissue engineering. We hope that our detailed illustration of the MTJ and summary of the representative research achievements will help researchers gain a deeper understanding of the MTJ and inspire fresh insights and breakthroughs for future research. Full article

We report, for the first time, the full-field 3D strain distribution of the muscle-tendon junction (MTJ). Understanding the strain distribution at the junction is crucial for the treatment of injuries and to predict tear formation at this location. Three-dimensional full-field strain distribution of mouse MTJ was measured using X-ray computer tomography (XCT) combined with digital volume correlation (DVC) with the aim of understanding the mechanical behavior of the junction under tensile loading. The interface between the Achilles tendon and the gastrocnemius muscle was harvested from adult mice and stained using 1% phosphotungstic acid in 70% ethanol. In situ XCT combined with DVC was used to image and compute strain distribution at the MTJ under a tensile load (2.4 N). High strain measuring 120,000 µε, 160,000 µε, and 120,000 µε for the first principal stain (ε_p1), shear strain (γ), and von Mises strain (ε_VM), respectively, was measured at the MTJ and these values reduced into the body of the muscle or into the tendon. Strain is concentrated at the MTJ, which is at risk of being damaged in activities associated with excessive physical activity. Full article

Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications. In this paper, a novel radiation-hardened triple modular redundancy (TMR) design for anti-radiation reinforcement is proposed based on the utilization of STT-MTJ devices. Simulation results demonstrate the radiation-hardened performance of the design. This shows improvements in the design’s robustness against ionizing radiation. Full article

Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter of concern in these hybrid circuits. In this regard, we have developed a novel write circuit for the contemporary three-terminal perpendicular-MTJs that works on the voltage-gated spin orbit torque (VG+SOT) switching mechanism to store the information in hybrid circuits for IMC architecture. Investigation of the novel write circuit reveals a remarkable reduction in the total energy consumption (and energy delay product) of 92.59% (95.81) and 92.28% (42.03%) than the conventional spin transfer torque (STT) and spin-Hall effect assisted STT (SHE+STT) write circuits, respectively. Further, we have developed all the hybrid logic gates followed by nonvolatile full adders (NV-FAs) using VG+SOT, STT, and SHE+STT MTJs. Simulation results show that with the VG+SOT NOR-OR, NAND-AND, XNOR-XOR, and NV-FA circuits, the reduction in the total power dissipation is 5.35% (4.27%), 5.62% (3.2%), 3.51% (2.02%), and 4.46% (2.93%) compared to STT (SHE+STT) MTJs respectively. Full article

Magnetic tunnel junction (MTJ) sensors have been one of the excellent candidates for magnetic field detection due to their high sensitivity and compact size. In this paper, we design a magnetometer with in situ magnetic feedback consisting of an MTJ sensor. To analyze and evaluate the detectivity of the MTJ magnetometer, a noise model of the MTJ sensor in the magnetometer without magnetic feedback is first developed. Then, the noise model of the MTJ magnetometer with in situ magnetic feedback is also established, including the noises of the MTJ sensor and the signal conditioning circuit, as well as the feedback circuit. The equivalent noise model of the MTJ magnetometer with in situ magnetic feedback is evaluated through nonlinear fitting for the noise voltage spectrum. Although the noise generated by the MTJ sensor is much greater than that of the signal conditioning circuit, the noise introduced by the feedback coils into the MTJ sensor is slightly more than twice that generated by the MTJ sensor itself. The measurement results show that the detectivity of the MTJ magnetometer with in situ magnetic feedback reaches 526 pT/Hz^1/2 at 10 Hz. The equivalent noise analysis method presented in this paper is suitable for the detectivity analysis of magnetometers with magnetic feedback. Full article

As the third-generation neural network, the spiking neural network (SNN) has become one of the most promising neuromorphic computing paradigms to mimic brain neural networks over the past decade. The SNN shows many advantages in performing classification and recognition tasks in the artificial intelligence field. In the SNN, the communication between the pre-synapse neuron (PRE) and the post-synapse neuron (POST) is conducted by the synapse. The corresponding synaptic weights are dependent on both the spiking patterns of the PRE and the POST, which are updated by spike-timing-dependent plasticity (STDP) rules. The emergence and growing maturity of spintronic devices present a new approach for constructing the SNN. In the paper, a novel SNN is proposed, in which both the synapse and the neuron are mimicked with the spin transfer torque magnetic tunnel junction (STT-MTJ) device. The synaptic weight is presented by the conductance of the MTJ device. The mapping of the probabilistic spiking nature of the neuron to the stochastic switching behavior of the MTJ with thermal noise is presented based on the stochastic Landau–Lifshitz–Gilbert (LLG) equation. In this way, a simplified SNN is mimicked with the MTJ device. The function of the mimicked SNN is verified by a handwritten digit recognition task based on the MINIST database. Full article