Advanced CMOS Devices and Applications, 2nd Edition

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 November 2024 | Viewed by 257

Special Issue Editors


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Guest Editor
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Interests: advanced logic CMOS technologies; novel transistor architectures; device physics
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Guest Editor
School of Integrated Circuits, East China Normal University, Shanghai 200050, China
Interests: CMOS
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We are pleased to invite you to submit your abstracts in fields related to advanced CMOS transistors and emerging non-volatile memories, including material fundamentals, process technologies, device physics, novel device architectures, and neuromorphic computing applications. This Special Issue aims to provide an overview of the recent progress in advanced CMOS and memory technologies from research scientists and engineers working in the fields of semiconductor devices, materials, and reliability and to discuss the opportunities and challenges in these fields, as well as any new findings, new phenomena, and state-of-the-art technologies related to advanced CMOS and memory devices. Papers related to device and material technologies for advanced CMOS and emerging non-volatile memories for neuromorphic computing applications are solicited, with topics including the following:

(1) Advanced CMOS device architectures for high performance, ultra-low-power consumption, and reliability improvement;

(2) Emerging materials and advanced process technologies for high-mobility channels, gate stack formation, S/D contact, and junctions;

(3) Device physics, novel characterization methods, TCAD simulation, and ab initio calculation for advanced CMOS and emerging non-volatile memories;

(4) Conventional memories and emerging memories such as ReRAM, MRAM, PCRAM, and FeRAM;

(5) Memory device physics, reliability, and modeling;

(6) Synaptic devices for neuromorphic computing applications.

Prof. Dr. Choonghyun Lee
Prof. Dr. Yi Zhao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced logic CMOS transistor
  • emerging non-volatile memories
  • neuromorphic computing
  • high-mobility channel
  • device physics
  • novel characterization method
  • simulation and modeling

Published Papers

This special issue is now open for submission.
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