56 Results Found

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and...

The recent global pandemic of COVID-19 highlights the urgent need for practical applications of anti-microbial coatings on touch-surfaces. Nanostructured TiO2 is a promising candidate for the passive reduction of transmission when applied to handles,...

The parameters for metal-organic chemical vapor deposition (MOCVD) processes significantly influence the properties of ZnO films, especially the flow stability of the chamber, which is caused by process parameters such as the shape of reaction chambe...

HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of compos...

The results of magnetoresistance (MR) and resistance relaxation of nanostructured La1−xSrxMnyO3 (LSMO) films with different film thicknesses (60–480 nm) grown on Si/SiO2 substrate by the pulsed-injection MOCVD technique are presented and...

This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO3 films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harv...

The relationship between the purge time and the overall growth rate in pulsed injection metal–organic chemical vapor deposition with different V/III ratios is studied by numerical analysis. The transport behavior of TMAl and TMAlNH3 during the...

The monoclinic structures of vanadium dioxide are widely studied as appealing systems due to a plethora of functional properties in several technological fields. In particular, the possibility to obtain the VO2 material in the form of thin film with...

A measurement system based on the colossal magnetoresistance CMR-B-scalar sensor was developed for the measurement of short-duration high-amplitude magnetic fields. The system consists of a magnetic field sensor made from thin nanostructured manganit...

Lanthanum oxide (La2O3) layers are widely used in electronics, optics, and optoelectronics due to their properties. Lanthanum oxide is also used as a dopant, modifying and improving the properties of other materials in the form of layers, as well as...

Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production...

In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical...

Interest in iridium and platinum has been steadily encouraged due to such unique properties as exceptional chemical inertia and corrosion resistance, high biological compatibility, and mechanical strength, which are the basis for their application in...

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiNx passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research...

Today, many technologies for the deposition of various functional coatings using volatile compounds are united under the general name chemical vapor deposition processes from the gas phase (CDV, MOCVD, ALD, CVI, PECVD, etc [...]

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatmen...

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its sy...

Metal–organic chemical vapor deposition (MOCVD)-grown GaN on sapphire substrate was etched by hot phosphoric acids. Pyramid structures were obtained in the N-polar face of the MOCVD–GaN. Details of the formation process and morphology of...

The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options...

Zinc oxide nanowires (ZnO NWs) have gained considerable attention in the field of piezoelectricity in the past two decades. However, the impact of growth-process conditions on their dimensions and polarity, as well as the piezoelectric properties, ha...

Very few sodium complexes are available as precursors for the syntheses of sodium-based nanostructured materials. Herein, the diglyme, triglyme, and tetraglyme (CH3O(CH2CH2O)nCH3, n = 2–4) adducts of sodium hexafluoroacetylacetonate were synthe...

Calcium Titanate (CaTiO3) has been introduced as an attractive biomaterial for the enhancement of calcium phosphate deposition in vivo and in vitro. We hypothesized that CaTiO3 directly coated on titanium (Ti) by metal-organic chemical vapor depositi...

Scandium complexes with β-diketonate ligands are valuable precursors for the metal–organic chemical vapor deposition (MOCVD) of scandia based materials, but data on their volatilization thermodynamics crucial to MOCVD technology are in a h...

This paper presents pioneering results on the evaluation of noble metal film hetero-structures to improve some functional characteristics of carbon-based implant materials: carbon-composite material (CCM) and carbon-fiber-reinforced polyetheretherket...

Metal–organic chemical vapor deposition (MOCVD) is a key method for scalable synthesis of two-dimensional transition metal dichalcogenide (2D-TMDC) layers. However, it faces several challenges, such as the unintentional co-deposition of carbon...

In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) ep...

In the present energetic scenario, the development of materials with high potentiality in the technological fields of energy conversion processes, production and storage of hydrogen, are of great interest in the scientific community. In particular, w...

In this paper, we will discuss the rapid progress of third-generation semiconductors with wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This architecture has high mass-production potential due to its low cost, large...

Optical properties of wurtzite violet InGaN/GaN quantum well (QW) structures, with the same well-plus-barrier thickness, grown by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates, were investigated using temperature-depe...

CdTe solar cells were produced using metal organic chemical vapour deposition (MOCVD), which employed a (Zn,Al)S (AZS) high resistant transparent (HRT) layer at the transparent conducting oxide (TCO)/Cd(Zn)S emitter interface, to enable the higher an...

Direct chemical vapor deposition (CVD) growth of hexagonal boron nitride (h-BN) on insulating substrates offers a promising pathway to circumvent transfer-induced defects and enhance device integration. This comprehensive review systematically evalua...

The flow behaviour under the influence of susceptor moving speed is a key factor for the fabrication of high-quality cadmium telluride (CdTe) thin films during the inline metal-organic chemical vapour deposition (MOCVD) process. The main purpose of t...

Titanium nitride (TiN) not only was utilized in the wear-resistant coatings industry but it was also adopted in barrier processes for semiconductor manufacturing. Barrier processes include the titanium (Ti) and TiN processes, which are commonly used...

γ-phase aluminum oxide (γ-Al2O3) films are grown on MgO (100) wafers by metal organic chemical vapor deposition (MOCVD). Post-annealing process is conducted to study the influence of annealing temperature on the properties of the films. Structural an...

A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO3/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes. The GdYB...

Using the technology of metalorganic chemical vapor deposition (MOCVD), fully fiber refractometers based on the lossy mode resonance (LMR) were obtained and investigated. The sensors are made on the basis of a section of optical fiber etched to the c...

In this paper, we report the growth of high-quality In0.59Ga0.41As/In0.37Al0.63As strain-balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi-wafer planetary reactor addressing, in particular, quality and scaled manu...

Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2...

To meet the stringent requirements of 5G communication, we proposed a high-performance bulk acoustic wave (BAW) filter based on single crystal AlN piezoelectric films on a SiC substrate. The fabrication of the BAW filter is compatible with the GaN hi...

Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost, reproducible, and simple process for the mass production of se...

Doping process is widely used to improving emission performance of MgO films thicker than 10 nm via assisting the surface recharge and changing in electron structure. The present paper briefly reviews this strategy in a search for the new materials a...

Thinning the buffer layer thickness between the GaN epilayer and Si substrate without introducing large residual stress is persistently desired for GaN-on-Si devices to promote their thermal budgets and low-cost, multifunctional applications. In this...

InGaN-based red micro-light-emitting diodes (µLEDs) of different sizes were prepared in this work. The red GaN epilayers were grown on 4-inch sapphire substrates through metal-organic chemical vapor deposition (MOCVD). Etching, sidewall treatment, an...

A highly strained InGaAs quantum well (QW) vertical-cavity surface-emitting laser (VCSEL) with low threshold current density, high efficiency and output power emissions around 1130 nm was grown by MOCVD. Its static characteristics at room temperature...

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electroni...

N-polar GaN HEMTs feature a natural back-barrier and enable the formation of low-resistance Ohmic contacts, with the potential to suppress short-channel effects and current collapse effects at sub-100 nm gate lengths, rendering them particularly prom...

To search for new suitable Pd precursors for MOCVD/ALD processes, the extended series of fluorinated palladium complexes [Pd(CH3CXCHCO(R))2] with β-diketone [tfa−1,1,1-trifluoro-2,4-pentanedionato (1); pfpa−5,5,6,6,6-pentafluoro-2,4-...

A GaN layer with a thickness of 2 µm was grown on a sapphire substrate using atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD). Subsequently, the layer was annealed under a nitrogen atmosphere at temperatures ranging...

Metal acetylacetonates belong to the β-diketonate family and are considered as classics among precursors for metal–organic chemical vapor deposition (MOCVD). The success of film preparation is crucially dependent on the volatilization thermodynamics...

III-V semiconductors are being considered as promising candidates to replace silicon channel for low-power logic and RF applications in advanced technology nodes. InGaAs is particularly suitable as the channel material in n-type metal-oxide-semicondu...