III-Nitride Materials: Properties, Growth, and Applications

Dear Colleagues,

III-Nitrides have been widely developed and researched in the past 30 years. The gallium nitride (GaN)-based light emitting diodes (LEDs) prevail in lighting, display, light communication, sterilization, etc. The GaN-based high electron mobility transistors (HEMTs) have already shown tremendous potential for high-frequency communications and power conversions. Compared to blue and green LEDs, GaN-based yellow or red LEDs and ultraviolet LEDs are deficient in high external quantum efficiency. The relatively high defects in the epilayers and the interface traps hinder the experimental performance of GaN HEMTs (e.g., breakdown voltage, Vth hysteresis, high dynamic Ron, etc.). The p-channel field effect transistor of GaN is still under-investigated. Compared to the incumbent Ga-polar counterpart, N-polar GaN demonstrates some intrinsic merits for both LEDs and HEMTs. Therefore, studies of N-polar GaN are also flourishing. As for GaN growth, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE) are the major methods. The growth kinetics of GaN remain to be clarified, especially on foreign substrates (e.g., sapphire, silicon, silicon carbide, etc.). Many open questions regarding III-Nitrides await the consensus of researchers.

This Special Issue of Crystals serves to provide a platform for researchers to report their results and findings in III-Nitrides materials, including growth, characterisations, structure designs, device fabrication procedures, optical and electronic properties, and their applications in emerging lighting, display, RF, power electronics systems, etc.

Potential topics include, but are not limited to:

• The growth of III-Nitrides;
• Deep insight into the growth mechanisms and device performance;
• Novel structures of III-Nitrides devices;
• Materials, optical, and electronic characteristics of III-Nitrides devices;
• InGaN long wavelength LEDs;
• GaN-based UV LEDs;
• GaN-based micro-LED displays;
• GaN-based lasers;
• GaN HEMTs.

Dr. Yangfeng Li
Dr. Zeyu Liu
Dr. Mingzeng Peng
Prof. Dr. Yang Wang
Dr. Yang Jiang
Dr. Yuanpeng Wu
Guest Editors

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