296 Results Found

In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate betwee...

It is a fact that surface electron accumulation layer with sheet electron density in the magnitude of ~10¹³ cm⁻² on InN, either as-grown or Mg-doped, makes InN an excellent candidate for sensing application. In this paper, the response of hydro...

In this study, we report the catalyst-free growth of n-type wurtzite InN, along with its optical properties and carrier dynamics of different surface dimensionalities. The self-catalyzed epitaxial growth of InN nanorods grown by metal–organic molecul...

Narrow-gap InN is a desirable candidate for near-infrared (NIR) optical communication applications. However, the absence of lattice-matched substrates impedes the fabrication of high-quality InN. In this paper, we employed Molecular Beam Epitaxy (MBE...

Willingness to pay (WTP) is a foundation of payment for environmental services (PES) and varies according to different stakeholders. Because of its high-quality environment, numerous inns have appeared around Erhai Lake, which has become the inn sect...

The first systematic attempts to straighten the River Inn in Tyrol for shipping and land reclamation date back to the middle of the 18th century. A dedicated hydraulic engineering authority—the so-called Main Ark Inspection—was establishe...

The serious separation of electron–hole wavefunctions, which is caused by the built-in electric field, prevents electron–hole radiative recombination in quantum wells (QWs) in high-In-content InGaN-based red light-emitting diodes (LEDs)....

Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process...

III-nitrides are crucial materials for solar flow batteries due to their versatile properties. In contrast to the well-studied MOVPE reaction mechanism for AlN and GaN, few works report gas-phase mechanistic studies on the growth of InN. To better un...

An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled bre...

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III...

The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal org...

In gas-insulated switchgear (GIS), partial discharge (PD) can be monitored by detecting sulfur hexafluoride-nitrogen (SF₆-N₂) decomposition components. In this paper, silver oxide (Ag₂O) modification was introduced to improve the gas-sensing properti...

Dissolved gas analysis (DGA) is recognized as one of the most reliable methods in transformer fault diagnosis technology. In this paper, three characteristic gases of transformer oil (CO, C₂H₄, and CH₄) were used in conjunction with a Cr-decorated In...

Rural homestay inns are an important part of rural tourism, and tourists’ support behavior intentions are important factors affecting whether rural homestay inns can be developed sustainably. The local authentic life experiences and realization...

In this work, GaN and InN nanosheets with dodecylamine (DDA) as surfactant have been studied as nanofluids to be used in solar plants. The interactions between the sheets and the surfactants have been performed using density functional theory. The mo...

Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor e...

Indium nitride (InN) luminescence is substantially enhanced by the introduction of a multilayer graphene interlayer, mitigating the lattice mismatch between the InN epilayer and the Gallium nitride (GaN) template on a sapphire substrate via weak van...

This paper explores the cinematic meta-theme of the “death of cinema” through the lens of Taiwanese director, Tsai Ming-liang’s 2003 film, Goodbye, Dragon Inn. In the film, the final screening of the wuxia pian classic, Dragon Inn,...

Ammonia is an essential biomarker for noninvasive diagnosis of liver malfunction. Therefore, selective detection of ammonia is essential for medical application. Here, we demonstrate a portable device to selectively detect sub-ppm ammonia gas. The pr...

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques...

In this paper, we report the realization and characterization of a condensation sensor based on indium nitride (InN) layers deposited by magnetron sputtering on glass and flexible plastic substrates, having fast response and using potentially low cos...

In this study, we report the optical properties and carrier dynamics of different surface dimensionality n-type wurtzite InN with various carrier concentrations using photoluminescence (PL) and an energy-dependent, time-resolved photoluminescence (ED...

Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates...

Extensive ab initio density functional theory molecular dynamics calculations were used to evaluate stability conditions for relevant phases of InN. In particular, the p-T conditions of the thermal decomposition of InN and pressure-induced wurtzite&n...

To address the problems of low coverage rate and low detection accuracy in UAV-based aircraft skin defect detection under complex real-world conditions, this paper proposes a method combining a Greedy-based Breadth-First Search Coverage Path Planning...

A brand-new gas sensor nanocomposite, In₂O₃-InN, was synthesized by in-situ partial oxidation of InN and presented fast response–recovery property for NO₂ detecting. The structure and morphology of the samples were characterized by X-ray diffra...

Understanding the spatiotemporal patterns and key determinants of rural homestay industry agglomeration is crucial for the well-planning and well-management of rural tourism during the process of rural revitalization in China. By employing multi geos...

A transition metal (TM) doped InN monolayer has demonstrated with superior behavior for gas adsorption and sensing. For this paper, we studied the adsorption behavior of a Pd-doped InN (Pd-InN) monolayer upon CO and NO using the first-principles theo...

CH₂O is a common toxic gas molecule that can cause asthma and dermatitis in humans. In this study the adsorption behaviors of the CH₂O adsorbed on the boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), boron phos...

In this paper, we will extend the VIKOR (VIsekriterijumska optimizacija i KOmpromisno Resenje) method to multiple attribute group decision-making (MAGDM) with interval neutrosophic numbers (INNs). Firstly, the basic concepts of INNs are briefly prese...

In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by R...

In this study, we undertake a Bayesian optimization of the Hubbard U parameters of wurtzite GaN and InN. The optimized Us are then tested within the Hubbard-corrected local density approximation (LDA+U) approach against standard density functional th...

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both material...

This article addresses the issue of historical heritage revitalization using the example of a tavern. The concept presented in this study constitutes an attempt to establish a connection between the community’s tangible historical legacy and th...

III-Nitride semiconductors (BN, AlN, GaN, and InN) exhibit exceptional electronic and mechanical properties that render them indispensable for high-performance optoelectronic, power, and high-frequency device applications. This study implements first...

In this paper, an adaptive incremental neural network (INN) fixed-time tracking control scheme based on composite learning is investigated for robot systems under input saturation. Firstly, by integrating the composite learning method into the INN to...

Rural tourism, which is often interpreted as rural development initiatives, has been extensively studied in a Japanese context; however, this has been typically observed at a community level, and the host households were assumed as homogeneous. There...

Due to a lower InN bandgap $\mathrm{e}\mathrm{n}\mathrm{e}\mathrm{r}\mathrm{g}\mathrm{y} {\mathrm{E}}_{\mathrm{g}}~0.7 \mathrm{e}\mathrm{V}$, ${\mathrm{I}\mathrm{n}}_{\mathrm{x}}{\mathrm{G}\mathrm{a}}_{1-\mathrm{x}}\mathrm{N}/\mathrm{S}\mathrm{a}\mathrm{p}\mathrm{p}\mathrm{h}\mathrm{i}\mathrm{r}\mathrm{e}$ epifilms are considered valuable in the development of low-dimensional heterostructure-based photonic devices. Adjusting the composition x and thickness d in epitaxially...

To solve the shuttling effect and transformations of LiPSs in lithium–sulfur batteries, heterostructures have been designed to immobilize LiPSs and boost their reversible conversions. In this paper, we have constructed AlN/InN heterojunctions w...

In recent years, typhoon disasters have occurred frequently and the economic losses caused by them have received increasing attention. This study focuses on the evaluation of typhoon disasters based on the interval neutrosophic set theory. An interva...

As an insulating medium, sulfur hexafluoride (SF₆) is extensively applied to electrical insulation equipment to ensure its normal operation. However, both partial discharge and overheating may cause SF₆ to decompose, and then the insulation strength...

To effectively address air pollution and enhance air quality, governments must be able to predict the air quality index with high accuracy and reliability. However, air quality prediction is subject to ambiguity and instability because of the atmosph...

The lattice dynamical properties of dilute InAs_1−xN_x/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrom...

For moderate-to-severe glaucoma, trabeculectomy remains the “gold standard” intraocular pressure (IOP)-lowering treatment; nonetheless, this method requires extensive post-operative maintenance. Microinvasive glaucoma surgery (MIGS) treat...

The propagation of longitudinally polarized acoustic modes along thin piezoelectric plates (BN, ZnO, InN, AlN and GaN) is theoretically studied, aiming at the design of high frequency electroacoustic devices suitable for work in liquid environments....

New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indi...

This research project investigates the potential of 360-panorama tours to improve the situated and contextual interpretation, virtual visitation, and spatial understanding of recorded or simulated built heritage sites. Our chosen case study was the S...

The narrow bandgap InN material, with exceptional physical properties, has recently gained considerable attention, encouraging many scientists/engineers to design infrared photodetectors, light-emitting diodes, laser diodes, solar cells, and high-pow...

GaN heterostructure is a promising material for next-generation optoelectronic devices, and Indium gallium nitride (InGaN) has been widely used in ultraviolet and blue light emission. However, its applied potential for longer wavelengths still requir...