The stability of vertical geometry NiO/Ga2O3 rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devi...
Ga2O3 heterojunction rectifiers have emerged as a novel candidate for various power conversion applications by using NiO as the solution on the p-type side. In this work, the optimized design of high-breakdown (1–7 kV), vertical geometry NiO/Ga...
In this study, we present the fabrication and characterization of vertically oriented NiO/β polymorph n-Ga2O3/n+ Ga2O3 heterojunction rectifiers featuring a substantial area of 1 mm2. A dual-layer SiNX/SiO2 dielectric field plate edge terminatio...
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3) β...
In this study, high-conductivity W-doped Ga2O3 thin films were successfully fabricated by directly depositing a composition of Ga2O3 with 10.7 at% WO3 (W:Ga = 12:100) using electron beam evaporation. The resulting thin films were found to be amorphou...
We investigated the effect of silver catalysts to enhance the growth of Ga2O3 nanowires. The growth of Ga2O3 nanowires on a P+-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the prese...
Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diff...
ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal–ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration...
In this study, the structural and electrical properties of orthorhombic κ-Ga2O3 films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga2O3/AlN/Si structures, the formation of two-...
We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN subst...
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor ligh...
Solar-blind ultraviolet (UV) photodetectors based on wide-bandgap oxide semiconductors are highly desirable for environmental monitoring, flame sensing, and secure optical communication. Among them, Ga2O3 has attracted extensive attention due to its...
PtSe2/GaP nanowire heterostructures were fabricated and characterized to explore their optoelectronic response under broadband illumination. Few-layer PtSe2 was synthesized on GaP substrates with and without nanowires by selenization of a pre-deposit...
A vertical Ni/β-Ga2O3 Schottky barrier diode was fabricated on an unintentionally doped bulk (−201)-oriented β-Ga2O3 single crystal and investigated with a focus on the underlying photoresponse mechanisms. The device exhibits well-def...
Asymmetric metal-semiconductor-metal (MSM) aluminum gallium nitride (AlGaN) UV sensors with 24% Al were fabricated using a selective annealing technique that dramatically reduced the dark current density and improved the ohmic behavior and performanc...
In this study, Mo/β-Ga2O3 vertical Schottky barrier diodes (SBDs) were fabricated using a sputtering process, and the electrical characteristics were evaluated as a function of post-annealing temperature. β-Ga2O3 is an ultra-wide bandgap se...
Triboelectric nanogenerators (TENGs) offer intrinsically high open-circuit voltages in the kilovolt range; however, conventional diode rectifier interfaces clamp the voltage prematurely, restricting access to the high-energy portion of the mechanical...
The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices. In this paper, we reported the growth of GaN-based light-emitting diodes (LEDs) on amor...
The influence of O2 flow rate on the compositional, optical and electrical characteristics of silicon oxide (SiOx) thin films (x < 2) were studied in this work. The SiOx thin films were obtained by pulsed direct current (DC) magnetron sputtering (...
Soybean (Glycine max) is an economically important crop which is very susceptible to salt stress. Tolerance to Na2SO4 stress was evaluated in soybean plants overexpressing or suppressing the phytoglobin GmPgb1. Salt stress depressed several gas excha...