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Open AccessArticle

Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

1
Institute of Photonics and Electronics of the Czech Academy of Sciences, Chaberska 57, 18251 Prague 8, Czech Republic
2
Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Prague 2, Czech Republic
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(3), 508; https://doi.org/10.3390/nano10030508
Received: 24 February 2020 / Revised: 9 March 2020 / Accepted: 9 March 2020 / Published: 11 March 2020
We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency. View Full-Text
Keywords: ZnO nanorods; nanoscale heterojunctions; current-voltage characteristics; chemical bath deposition; annealing; focused ion beam patterning; nanoprobe in the scanning electron microscope ZnO nanorods; nanoscale heterojunctions; current-voltage characteristics; chemical bath deposition; annealing; focused ion beam patterning; nanoprobe in the scanning electron microscope
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MDPI and ACS Style

Tiagulskyi, S.; Yatskiv, R.; Faitová, H.; Kučerová, Š.; Roesel, D.; Vaniš, J.; Grym, J.; Veselý, J. Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. Nanomaterials 2020, 10, 508. https://doi.org/10.3390/nano10030508

AMA Style

Tiagulskyi S, Yatskiv R, Faitová H, Kučerová Š, Roesel D, Vaniš J, Grym J, Veselý J. Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. Nanomaterials. 2020; 10(3):508. https://doi.org/10.3390/nano10030508

Chicago/Turabian Style

Tiagulskyi, Stanislav; Yatskiv, Roman; Faitová, Hana; Kučerová, Šárka; Roesel, David; Vaniš, Jan; Grym, Jan; Veselý, Jozef. 2020. "Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates" Nanomaterials 10, no. 3: 508. https://doi.org/10.3390/nano10030508

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