Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates
Tiagulskyi, S.; Yatskiv, R.; Faitová, H.; Kučerová, Š.; Roesel, D.; Vaniš, J.; Grym, J.; Veselý, J. Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. Nanomaterials 2020, 10, 508. https://doi.org/10.3390/nano10030508
Tiagulskyi S, Yatskiv R, Faitová H, Kučerová Š, Roesel D, Vaniš J, Grym J, Veselý J. Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates. Nanomaterials. 2020; 10(3):508. https://doi.org/10.3390/nano10030508
Chicago/Turabian StyleTiagulskyi, Stanislav, Roman Yatskiv, Hana Faitová, Šárka Kučerová, David Roesel, Jan Vaniš, Jan Grym, and Jozef Veselý. 2020. "Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates" Nanomaterials 10, no. 3: 508. https://doi.org/10.3390/nano10030508