Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
Abstract
:1. Introduction
2. Materials and Methods
2.1. Si/SiO2 Substrate Patterning
2.2. MBE Growth
3. Results and Discussion
3.1. Optical Properties Study
3.2. Device Processing
3.3. Electrical and Electroluminescent Characterization
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Dvoretckaia, L.; Gridchin, V.; Mozharov, A.; Maksimova, A.; Dragunova, A.; Melnichenko, I.; Mitin, D.; Vinogradov, A.; Mukhin, I.; Cirlin, G. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates. Nanomaterials 2022, 12, 1993. https://doi.org/10.3390/nano12121993
Dvoretckaia L, Gridchin V, Mozharov A, Maksimova A, Dragunova A, Melnichenko I, Mitin D, Vinogradov A, Mukhin I, Cirlin G. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates. Nanomaterials. 2022; 12(12):1993. https://doi.org/10.3390/nano12121993
Chicago/Turabian StyleDvoretckaia, Liliia, Vladislav Gridchin, Alexey Mozharov, Alina Maksimova, Anna Dragunova, Ivan Melnichenko, Dmitry Mitin, Alexandr Vinogradov, Ivan Mukhin, and Georgy Cirlin. 2022. "Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates" Nanomaterials 12, no. 12: 1993. https://doi.org/10.3390/nano12121993