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Open AccessArticle

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea
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Materials 2020, 13(2), 434; https://doi.org/10.3390/ma13020434
Received: 26 December 2019 / Revised: 13 January 2020 / Accepted: 14 January 2020 / Published: 16 January 2020
Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of β-Ga2O3 {(−201), (−401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N2-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga2O3 film and Ga2O3–metal interface. View Full-Text
Keywords: gallium oxide; silicon carbide; heterojunction diodes; thermal activation energy gallium oxide; silicon carbide; heterojunction diodes; thermal activation energy
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Lee, Y.-J.; Schweitz, M.A.; Oh, J.-M.; Koo, S.-M. Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes. Materials 2020, 13, 434.

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