High-Reliability Semiconductor Devices and Integrated Circuits, 3rd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 25 May 2025 | Viewed by 741

Special Issue Editors


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Guest Editor
China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, China
Interests: failure mechanism and model of key devices; prognostics and health management (PHM) of power conversion system (PCS); PHM of system on chip (SoC)
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Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: integrated circuits design; simulation and evaluation method of radiation effects in aerospace integrated circuits
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Guangzhou institute of Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: VLSI design and optimization; brain-inspired computing; EDA technology
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

In this Special Issue titled “High-Reliability Semiconductor Devices and Integrated Circuits”, we will focus on the simulation, modeling, design, and optimization of high-reliability devices and integrated circuits for automobiles, avionics, and aerospace. High-reliability devices and integrated circuits have been intensely studied because they are widely used in traditional aerospace electronic systems, avionics, automobiles, etc. In recent years, in addition to the development of traditional highly reliable devices and circuits, new technologies such as intelligent analysis, optimization, and manufacturing based on artificial intelligence and other novel technologies have advanced the field of high-reliability devices and circuits.

This Special Issue will collect research works focused on mathematical models, high-efficiency/high-precision numerical solution methods, and intelligent design and optimization methods for high-reliability materials and devices and integrated circuits. We welcome novel works reporting on high-reliability devices and circuits and their applications to discuss the most recent breakthroughs and their potential impacts in related research fields. The specific topics of interest include, but are not limited to, the following:

  • Novel design methods for high-reliability devices and integrated circuits;
  • Novel optimization technologies for high-reliability devices and integrated circuits;
  • Advanced device structures or materials for high-reliability design;
  • Reliability analyses of special environments, such as those with a strong magnetic field, radiation environment, etc.;
  • Applications of novel technology, such as AI, in high-reliability design and analysis;
  • Novel simulation technologies for functional safety.

Dr. Yiqiang Chen
Prof. Dr. Yi Liu
Dr. Changqing Xu
Guest Editors

Manuscript Submission Information

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Keywords

  • high reliability
  • semiconductor devices
  • integrated circuits
  • strong magnetic field
  • radiation environment
  • intelligent design

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Published Papers (1 paper)

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Research

13 pages, 3451 KiB  
Article
Performance Degradation of Ga2O3-Based X-Ray Detector Under Gamma-Ray Irradiation
by Xiao Ouyang, Silong Zhang, Tao Bai, Zhuo Chen, Yuxin Deng, Leidang Zhou, Xiaojing Song, Hao Chen, Yuru Lai, Xing Lu, Liang Chen, Liangliang Miao and Xiaoping Ouyang
Micromachines 2025, 16(3), 339; https://doi.org/10.3390/mi16030339 - 14 Mar 2025
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Abstract
X-ray response performances of a p-NiO/β-Ga2O3 hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced [...] Read more.
X-ray response performances of a p-NiO/β-Ga2O3 hetero-junction diode (HJD) X-ray detector were studied before and after γ-ray irradiation at −200 V, with a total dose of 13.5 kGy(Si). The response performances of the HJD X-ray detector were influenced by the trap-assistant conductive process of the HJD under reverse bias, which exhibited an increasing net (response) current, nonlinearity, and a long response time. After irradiation, the Poole–Frenkel emission (PFE) dominated the leakage current of HJDs due to the higher electric field caused by the increased net carrier concentration of β-Ga2O3. This conductive process weakened the performance of the HJD X-ray detector in terms of sensitivity, output linearity, and response speed. This study provided valuable insights into the radiation damage and performance degradation mechanisms of Ga2O3-based radiation detectors and offered guidance on improving the reliability and stability of these radiation detectors. Full article
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