CMOS Sensors for Tracking Applications
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Sensing and Imaging".
Deadline for manuscript submissions: closed (20 October 2022) | Viewed by 6377
Special Issue Editors
Interests: physical modeling and numerical analysis of semiconductor devices; VLSI design and characterization of radiation detectors based on active pixel sensors integrated in CMOS sub-micrometer technology and CMOS vertical scale (3D) technology; TCAD numerical modeling of radiation damage effects in semiconductors
Interests: electronic systems and integrated electronic circuits to control and reading of sensors for high energy physics experiments; design and characterization of radiation detectors based on active pixel sensors integrated in CMOS sub-micrometer technology and CMOS vertical scale (3D); smart sensors; programmable systems; modeling of electrical and thermal systems; SoC for IoT applications
Special Issue Information
Dear Colleagues,
In recent years, CMOS sensor applications have grown at a remarkable rate due to the integration at the sensor level of advanced functionalities (e.g., A/D conversion and data processing, both at pixel and/or system level) enabled by the progress of CMOS nanoelectronic fabrication technology. In addition to imaging applications, new perspectives in several research areas could be opened up by such a class of devices if they could be used with or without significant changes to the production process—for example, position measuring devices for ionizing radiation with sub-micrometer intrinsic accuracy, using either analog or digital readout modes or advanced devices combining timing and spatial information (4D detectors) for tracking purposes. Radiation damage effects in tracking applications can be efficiently addressed as well using fabrication options and design techniques enabled by advances in CMOS sensor technology.
CMOS monolithic active pixel sensors (MAPS) have been proposed as an efficient solution combining sensing and processing at a pixel level, while the three-dimensional vertical scale integration of detectors allows fabricating advanced sensors with separated layers for detection and processing, respectively. The hybrid approach (sensor and CMOS custom read-out ASIC) performing high granularity pixel read-out are still at the cutting edge of tracking technology, profiting from the continuous advances of CMOS technology. This fosters advanced and innovative applications in different scenarios such as, but not limited to, high energy physics tracking, medical interventional radiology, and space applications.
This Special Issue will focus on recent advances and developments in CMOS sensor technology and applications for tracking purposes. Topics will include but are not limited to,
- CMOS sensor technologies: process, circuit, architecture;
- Radiation damage effects in CMOS sensors;
- Hybrid CMOS pixel sensors;
- Monolithic active pixel sensor (MAPS);
- CMOS 3D vertical-scale sensor;
- CMOS read-out electronics for tracking;
- Radiation tolerant read-out electronics;
- CMOS sensors for emerging applications: e.g., X-rays detection, electron microscopy, neutron detection, micro-electrode arrays for biomedical analyses, etc.
Dr. Daniele Passeri
Dr. Pisana Placidi
Guest Editors
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Keywords
- CMOS sensor process
- circuit and architecture
- hybrid CMOS pixel sensors
- monolithic active pixel sensors
- CMOS 3D vertical-scale sensors
- CMOS read-out electronics for tracking
- radiation damage effects
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