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Selected Papers from the 10th International Symposium on Sensor Science (I3S)

A special issue of Sensors (ISSN 1424-8220).

Deadline for manuscript submissions: closed (31 December 2024) | Viewed by 5255

Special Issue Editor


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Guest Editor
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
Interests: MEMS; NEMS; nanophotonics; Si photonics; metamaterials; energy harvesting; wearable sensors; flexible electronics; Artificial Intelligence of Things (AIoT); Internet of Things (IoT); electroceuticals and biomedical applications
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Special Issue Information

Dear Colleagues,

This Special Issue was created in collaboration with the 1st International Conference on AI Sensors and the 10th International Symposium on Sensor Science (AIS-I3S 2024), which will be held in University Town, National University of Singapore, Singapore from 1 August to 4 August 2024. It comprises 14 workshops. The conference participants are cordially invited to contribute a full manuscript to this Special Issue and receive a 20% discount on the Article Processing Charge.

I3S Workshops

W1: MEMS, NEMS and Edge Applications
W2: Metamaterials and Nanophotonics
W3: Sensors and IC Sensors Using CMOS MEMS and CMOS Compatible Materials
W4: Si Photonics for Sensing and Edge Computing
W5: Advanced Semiconductors and Heterogeneous Integration for Sensing Systems and Applications in 6G (e.g., compound semiconductors, 2D materials, chiplet, and system-in-package, etc.).
W6: Sensors, Implanted Energy Harvesters and Devices, and In-body IoT Technology for Prosthesis and Electroceuticals
W7: Sensors for Agriculture Applications and Harsh Environment
W8: Biosensors and Chemosensors
W9: Flexible, Stretchable and Wearable Sensors
W10: Self-Powered Sensors and Sensing Systems
W11: IoT Sensors and System Integration
W12: Advances in Sensor Applications
W13: MicroTAS and Lab-on-a-chip
W14: Industry Forum and Commercialization of Sensors and AI-Enabled Service

Prof. Dr. Chengkuo Lee
Guest Editor

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Keywords

  • MEME
  • CMOS
  • biosensors and chemosensors
  • IoT sensor
  • microTAS and lab-on-a-chip

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Published Papers (2 papers)

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Research

13 pages, 3755 KiB  
Article
Novel Insights into Surface Energies and Enhanced Gas-Sensing Capabilities of ZnGa2O4(111) via Ab Initio Studies
by Cheng-Lung Yu, Yan-Cheng Lin, Sheng-Yuan Jhang, Jine-Du Fu, Yi-Chen Chen and Po-Liang Liu
Sensors 2025, 25(2), 548; https://doi.org/10.3390/s25020548 - 18 Jan 2025
Viewed by 1067
Abstract
This study investigates the surface energies and work function changes in ZnGa2O4(111) surfaces with different atomic terminations using ab initio density functional theory. It explores the interactions of gas molecules such as NO, NO2, and CH3 [...] Read more.
This study investigates the surface energies and work function changes in ZnGa2O4(111) surfaces with different atomic terminations using ab initio density functional theory. It explores the interactions of gas molecules such as NO, NO2, and CH3COCH3 with Ga-terminated, O-terminated, and Ga-Zn-O-terminated surfaces. This study reveals previously unreported insights into how O-terminated surfaces exhibit enhanced reactivity with NO, resulting in significant work function changes of +6.42 eV. In contrast, Ga-terminated surfaces demonstrate novel interactions with oxidizing gases, particularly NO2, with a notable reduction in work function change of −1.63 eV, offering potential gas sensor technology advancements. Particularly notable is the Ga-Zn-O-terminated surface, which presents mixed characteristics influenced by the interplay of oxygen and metallic elements (gallium and zinc), leading to substantial work function changes of +4.97 eV for NO and +1.82 eV for NO2, thereby significantly enhancing sensitivity. This study unveils the previously unexplored roles of Ga-Zn-O-terminated ZnGa2O4 surfaces in optimizing semiconductor-based gas sensors, offering both oxidative and reductive potentials and making them versatile for diverse applications. Full article
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13 pages, 5691 KiB  
Article
An Analysis of Temperature-Dependent Timing Jitter Factors in the Structural Design of Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Detectors
by Jau-Yang Wu, Yu-Wei Lu, Meng-Hsuan Liu, Tien-Ning Chang and Chun-Hsien Liu
Sensors 2025, 25(2), 391; https://doi.org/10.3390/s25020391 - 10 Jan 2025
Viewed by 803
Abstract
Single-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Consequently, the jitter value of SPADs at different temperatures plays [...] Read more.
Single-Photon Avalanche Photodiodes (SPADs) are increasingly utilized in high-temperature-operated, high-performance Light Detection and Ranging (LiDAR) systems as well as in ultra-low-temperature-operated quantum science applications due to their high photon sensitivity and timing resolution. Consequently, the jitter value of SPADs at different temperatures plays a crucial role in LiDAR systems and Quantum Key Distribution (QKD) applications. However, limited studies have been conducted on this topic. In this study, we analyze the jitter characteristics of SPAD devices, focusing on the influence of device structures in two SPAD designs fabricated using the TSMC 18HV and TSMC 13HV processes. Using picosecond lasers with wavelengths ranging from ultraviolet (405 nm) to near-infrared (905 nm), we investigate the impact of different diffusion carrier types on jitter values and their temperature dependence across a range of 0 °C to 60 °C. Our results show that the jitter value of SPAD devices with low electric field regions varies significantly with temperature. This variation can be attributed to the higher temperature-dependent diffusion constant, as demonstrated by fitting the jitter diffusion tail with two diffusion time constants. In contrast, SPADs designed with modified electric field distributions exhibit smaller diffusion time constants and weaker temperature dependence, resulting in a much smaller temperature-dependent jitter value. Full article
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