High-Performance Semiconductor Optoelectronic Devices

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: 20 December 2025 | Viewed by 605

Special Issue Editors


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Guest Editor
Electrical & Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA
Interests: (µ)LEDs; high-power lasers; MOCVD; quantum dots; III-nitride; III-V
Electrical & Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706, USA
Interests: ultrawide-bandgap semiconductor; III-nitride; III-oxide; DUV LED; photodetector; semiconductor nanomembrane; high-power electronics

Special Issue Information

Dear Colleagues,

Semiconductor optoelectronic devices have attracted extensive attention for their variety of applications including telecommunication, sensing, energy conservation, displays, and lightning. To meet the growing demand, high-performance devices have been developed through advancements in materials, sophisticated device architectures, and innovative fabrication techniques.

This Special Issue aims to present up-to-date high-performance semiconductor optoelectronic devices, such as (µ)LEDs, lasers, photodetectors, and solar cells. Topics include but are not limited to the following:

  • Novel methods for synthesizing and fabricating optoelectronic materials;
  • Advances in device architecture for enhanced performance;
  • Techniques for characterizing and evaluating material properties and device performance;
  • Low-dimensional semiconductor optoelectronic materials and devices;
  • Semiconductor optoelectronic device physics, modeling, and simulation.

Dr. Cheng Liu
Dr. Yi Lu
Guest Editors

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Keywords

  • LED
  • micro-LED
  • edge-emitting laser
  • VCSEL
  • quantum cascade laser
  • photodetector
  • solar cell
  • III-V
  • III-nitride
  • GeSn

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Published Papers (1 paper)

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Research

15 pages, 2658 KiB  
Article
55% Efficient High-Power Multijunction Photovoltaic Laser Power Converters for 1070 nm
by Simon Fafard and Denis Masson
Photonics 2025, 12(5), 406; https://doi.org/10.3390/photonics12050406 - 23 Apr 2025
Viewed by 87
Abstract
High-efficiency multijunction laser power converters are demonstrated for the first time at high power for optical inputs around 1070 nm. The InP-based photovoltaic power-converting III–V heterostructures are designed with eight lattice-matched InGaAsP subcells (PT8-1070 nm). Conversion efficiencies of 55% were obtained at 18 [...] Read more.
High-efficiency multijunction laser power converters are demonstrated for the first time at high power for optical inputs around 1070 nm. The InP-based photovoltaic power-converting III–V heterostructures are designed with eight lattice-matched InGaAsP subcells (PT8-1070 nm). Conversion efficiencies of 55% were obtained at 18 W of output power. Endurance testing was performed for over 1000 h of continuous operation with an average output power of 13.2 W at an input wavelength of 1064 nm. An average steady-state efficiency of 54.4% at an ambient temperature of ~20 °C was obtained for that duration. The results demonstrate that 1 cm2 optical power converter devices can produce electrical outputs of 20 W at maximum power voltages around Vmpp ~6 V, thus retaining an optimal load near Rmpp at ~2 ohms. Efficiencies between 57.9% and 59.0% were also obtained for smaller 0.029 cm2 chips for input intensities between 35 and 69 W/cm2. This is an important development for power beaming applications: the unprecedented combination of power and conversion efficiency capabilities is expected to enable deployments for key wavelengths between 1040 and 1080 nm. Full article
(This article belongs to the Special Issue High-Performance Semiconductor Optoelectronic Devices)
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