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Micromachines
Special Issues
2D Material-Based Semiconductors: Design and Applications
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2D Material-Based Semiconductors: Design and Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 2365

Special Issue Editor

Dr. Mohammad Karbalaei Akbari

E-Mail Website
Guest Editor
Department of Solid State Sciences, Faculty of Science, Ghent University, 9000 Ghent, Belgium
Interests: 2D semiconductors; 2D materials; photonic materials; atomic layer deposition; functional nanostructures; bioinspired technologies
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The last decade has witnessed rapid progress in the development of two-dimensional materials for application in novel technologies. Consequently, tremendous efforts have been dedicated to developing novel functionalities of 2D materials and semiconductors. The merit of 2D semiconductors can be tailored into novel technological systems to bring novel opportunities for the development of advanced technologies. Accordingly, 2D nanostructured materials turn into novel platforms for fabrication of advanced electronic, photonic, and mechatronic systems. The aim of the current Special Issue is to bring the high-quality research works together from various areas of science and technologies, where the 2D semiconductor materials are employed to enable novel engineering functionalities. Therefore, this Special Issue may cover various topics in the area of 2D semiconductor materials, including the synthesis, design, and fabrication of advanced technologies that exploit the functionalities of 2D materials for their performances. We eagerly accept high-quality studies in various area of science and technology that brings interesting concepts in the rapidly growing field of 2D semiconductors. Our Special Issue covers various areas, including the synthesis and the application of 2D semiconductor materials in electronics, photonics, artificial intelligent systems, micromechanics, biotechnologies, environmental, catalysis, and energy applications. The present collection of papers is expected to provide a paradigm of the merit of the two-dimensional materials to discover new opportunities for improving the current technologies. 

Dr. Mohammad Karbalaei Akbari
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • two-dimensional (2D) materials
  • 2D semiconductors
  • 2D advanced devices
  • applications of 2D materials
  • 2D heterointerfaces, synthesis and functionalization

Published Papers (2 papers)

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Research

13 pages, 4979 KiB  
Article
Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed
by Yangjie Ou, Zhong Lan, Xiarong Hu and Dong Liu
Micromachines 2024, 15(2), 254; https://doi.org/10.3390/mi15020254 - 8 Feb 2024
Viewed by 1073
Abstract
A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations. Compared with a double-trench MOSFET (DT-MOS) and a DT-MOS with [...] Read more.
A SiC double-trench MOSFET embedded with a lower-barrier diode and an L-shaped gate-source in the gate trench, showing improved reverse conduction and an improved switching performance, was proposed and studied with 2-D simulations. Compared with a double-trench MOSFET (DT-MOS) and a DT-MOS with a channel-MOS diode (DTC-MOS), the proposed MOS showed a lower voltage drop (VF) at IS = 100 A/cm2, which can prevent bipolar degradation at the same blocking voltage (BV) and decrease the maximum oxide electric field (Emox). Additionally, the gate–drain capacitance (Cgd) and gate–drain charge (Qgd) of the proposed MOSFET decreased significantly because the source extended to the bottom of the gate, and the overlap between the gate electrode and drain electrode decreased. Although the proposed MOS had a greater Ron,sp than the DT-MOS and DTC-MOS, it had a lower switching loss and greater advantages for high-frequency applications. Full article
(This article belongs to the Special Issue 2D Material-Based Semiconductors: Design and Applications)
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9 pages, 1496 KiB  
Article
Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell
by Naheem Olakunle Adesina
Micromachines 2023, 14(7), 1449; https://doi.org/10.3390/mi14071449 - 19 Jul 2023
Viewed by 914
Abstract
In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene [...] Read more.
In recent years, graphene has received so much attention because of its superlative properties and its potential to revolutionize electronics, especially in VLSI. This study analyzes the effect of single-event upset (SEU) in an SRAM cell, which employs a metal-oxide semiconductor type graphene nano-ribbon field effect transistor (MOS-GNRFET) and compares the results with another SRAM cell designed using a PTM 10 nm FinFET node. Our simulations show that there is a change in the data stored in the SRAM after a heavy ion strike. However, it recovers from radiation effects after 0.46 ns for GNRFET and 0.51 ns for FinFET. Since the degradation observed in Q and Qb of GNRFET SRAM are 2.7X and 2.16X as compared to PTM nano-MOSFET, we can conclude that GNRFET is less robust to single effect upset. In addition, the stability of SRAM is improved by increasing the supply voltage VDD. Full article
(This article belongs to the Special Issue 2D Material-Based Semiconductors: Design and Applications)
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