Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.4
2.2
Journals
Symmetry
Special Issues
Symmetry in Microelectronics and Solid-State Electronics
share announcement

Symmetry in Microelectronics and Solid-State Electronics

A special issue of Symmetry (ISSN 2073-8994). This special issue belongs to the section "Engineering and Materials".

Deadline for manuscript submissions: 31 March 2026 | Viewed by 1765

Special Issue Editors

Dr. Dongdong Chen

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: Piezoelectric materials and transducers; Integrated circuits; Design and fabrication of microsystem; Intelligent optimization algorithms and its applications
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Guoqing Xin

E-Mail Website
Guest Editor
Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
Interests: 2D semiconductor materials and devices; thermal management; micro/nanoscale heat transfer
Special Issues, Collections and Topics in MDPI journals
Dr. Di Li

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: integrated circuits design; RFIC design; mixed signal IC design and data converters
Special Issues, Collections and Topics in MDPI journals
Dr. Ying Liu

E-Mail
Guest Editor
College of Intelligence Science and Technology, National University of Defense Technology, Changsha, China
Interests: 2D-materials nanoelectromechanical resonators; biohybrid nanoelectromechanical system; 2D-materials-integrated intelligent sensing; pressurized strain engineering
Dr. Tianlong Zhao

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: 2D semiconductor materials and devices; first-principles calculations; semiconductor device reliability; piezoelectric materials and devices
Special Issues, Collections and Topics in MDPI journals
Dr. Changqing Xu

E-Mail Website
Guest Editor
Guangzhou institute of Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: VLSI design and optimization; brain-inspired computing; EDA technology
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Symmetry is a field that refers to the regular and predictable patterns observed in the structure and behavior of solid-state materials. The concept of symmetry is deeply embedded in the field of solid-state electronics and microelectronics, influencing the design, performance, and reliability of a wide range of electronic devices and materials.

In this Special Issue, we are interested in novel ideas regarding advanced techniques covering all aspects of existing results in microelectronics and solid-state electronics. Potential topics include the following:

  • Semiconductors;
  • Integrated circuits (ICs);
  • Microelectronic devices;
  • Transistors;
  • Diodes.

Dr. Dongdong Chen
Prof. Dr. Guoqing Xin
Prof. Dr. Di Li
Dr. Ying Liu
Dr. Tianlong Zhao
Dr. Changqing Xu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Symmetry is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductors
  • integrated circuits (ICs)
  • microelectronic devices
  • transistors
  • diodes

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Review

39 pages, 19808 KiB  
Review
Research on Si/SiO2 Interfaces Characteristics Under Service Conditions
by Weida Zhang, Yunqi Yang, Dongdong Chen, Tianlong Zhao, Di Li and Yintang Yang
Symmetry 2025, 17(1), 46; https://doi.org/10.3390/sym17010046 - 30 Dec 2024
Viewed by 1376
Abstract
Si/SiO2 interfaces, an important functional part of silicon-based devices, are the structures most likely to cause failure. Under external load in the service state, Si/SiO2 interfaces can degrade in different forms, and they can change from an ideal symmetrical structure to [...] Read more.
Si/SiO2 interfaces, an important functional part of silicon-based devices, are the structures most likely to cause failure. Under external load in the service state, Si/SiO2 interfaces can degrade in different forms, and they can change from an ideal symmetrical structure to an asymmetric structure with defects. To systematically analyze the Si/SiO2 interface, the research methods of microstructure, including characterization and modeling, are first introduced. Then, the effects of irradiation, high field stress, mechanical stress, and high temperature on Si/SiO2 interfaces are studied. Chemical bonds, conductive band structure, and interface roughness can be changed under high field and mechanical stress loads. In addition, defect initiation and impurity migration may occur due to irradiation and temperature loads, which can lead to the failure of devices. Under multiple types of loads, the degradation mechanisms are complex, and the interfaces become more sensitive, which makes investigations into interface degradation laws difficult. For improving the reliability of devices, a systematic analysis of the influence on Si/SiO2 interfaces under complex loads is summarized. Full article
(This article belongs to the Special Issue Symmetry in Microelectronics and Solid-State Electronics)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-1
Back to TopTop