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Micromachines
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Multifunctional Transistors: Outlooks and Challenges
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Multifunctional Transistors: Outlooks and Challenges

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 October 2025 | Viewed by 1368

Special Issue Editors

Prof. Dr. Zhiyong Zhang

E-Mail Website
Guest Editor
Department of Electronics, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
Interests: nanoelectronics; carbon-based nanoelectronics
Dr. Lin Xu

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560, USA
Interests: nanoelectronics; first-principle calculation; carbon nanotube; 2D materials; TCAD modeling

Special Issue Information

Dear Colleagues,

"Multifunctional Transistors: Outlook and Challenges" explores the evolving realm of multifunctional transistors based on advanced materials, unraveling their vast potential while tackling associated challenges, such as Moore’s law.

This Special Issue serves as a compass, navigating the diverse landscape of these transistors and delving into their capacity to seamlessly integrate various functionalities within a single device. This versatile Special Issue extends across an array of fields, encompassing electronics, optoelectronics, flexible electronics, biomedical devices, sensors, spintronics, and more. From pioneering strides in nanoelectronics to revolutionary sensor technologies, this Special Issue provides a sweeping panorama, offering a deep understanding of the present state and the prospects of multifunctional transistors.

In scrutinizing the challenges inherent in their development and real-world implementation, this Special Issue sheds light on the intricate complexities involved in fully harnessing the potential of these groundbreaking devices. This comprehensive exploration not only reflects the current landscape but also lays the groundwork for future innovations in the realm of multifunctional transistors. Submissions should span all aspects of the development and application of these advanced devices.

Prof. Dr. Zhiyong Zhang
Dr. Lin Xu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • multifunctional device
  • nanoelectronics
  • optoelectronics
  • spintronics
  • biomedical devices
  • sensors
  • logic devices
  • neuromorphic computing
  • memory devices
  • semiconductor innovation

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Published Papers (2 papers)

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Research

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11 pages, 5202 KiB  
Article
Fabrication of Sol Gel Solution-Based Zinc–Tin Oxide/Carbon Nanotube Hybrid Thin-Film for Thin-Film Transistors
by Yong-Jae Kim and Woon-Seop Choi
Micromachines 2025, 16(4), 411; https://doi.org/10.3390/mi16040411 - 30 Mar 2025
Viewed by 256
Abstract
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The [...] Read more.
Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The single-walled carbon nanotubes (SWNTs) were incorporated with zinc–tin oxide (ZTO) precursor solution without dispersants for the device’s active layer. Sol–gel solution-based ZTO/single-wall carbon nanotube (ZTO/SWNT) (TFTs) with various SWNT concentrations were fabricated to improve the performance of ZTO TFTs. ZTO TFTs containing SWNTs exhibited better electrical performance than those without SWNTs. Among the samples, the ZTO TFT with an SWNT concentration of 0.07 wt.% showed a field-effect mobility (μsat) of 13.12 cm2/Vs (increased by a factor of 3) and an Ion/Ioff current ratio of 7.66 × 107 with a lower threshold voltage. SWNTs in the ZTO/SWNTs acted as carrier transfer rods, playing a crucial role in controlling the electrical performance of ZTO TFTs. The proposed fabrication of a sol–gel solution-based process is highly compatible with existing processes because it brings ZTO/SWNT hybrid TFTs closer to practical application, opening up the possibilities for next-generation electronics in flexible devices and low-cost manufacturing. Full article
(This article belongs to the Special Issue Multifunctional Transistors: Outlooks and Challenges)
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Review

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23 pages, 9429 KiB  
Review
An Overview of Hot Carrier Degradation on Gate-All-Around Nanosheet Transistors
by Huimei Zhou
Micromachines 2025, 16(3), 311; https://doi.org/10.3390/mi16030311 - 6 Mar 2025
Viewed by 718
Abstract
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits. The Hot Carrier (HC) effect cannot be ignored in the development of metal oxide semiconductor field effect transistors (MOSFETs). In [...] Read more.
Gate-All-Around (GAA) Nanosheet (NS) transistors have been identified as the device architecture for 3 nm and beyond as they provide additional scaling benefits. The Hot Carrier (HC) effect cannot be ignored in the development of metal oxide semiconductor field effect transistors (MOSFETs). In this article, we present a comprehensive review of Hot Carrier Degradation (HCD) studies on GAA NS transistors including geometry dependencies, surface orientation impacts, corner effects, characterization methodologies, process impacts and self-heating impacts from different researchers, together with the challenges and outlook, providing an insightful and valuable HCD reliability discussion and review on the cutting-edge technology in continuous MOSFET scaling. Full article
(This article belongs to the Special Issue Multifunctional Transistors: Outlooks and Challenges)
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