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Micromachines
Special Issues
Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices
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Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".

Deadline for manuscript submissions: 30 May 2026 | Viewed by 4019

Special Issue Editors

Dr. Jiangtao Su

E-Mail Website
Guest Editor
School of Electronic Information (School of Integrated Circuit Science and Engineering), Hangzhou Dianzi University, Hangzhou 311305, China
Interests: nonlinear device characterization and modelling; large-signal nonlinear measurement; mmWave circuits design
Dr. Wei Liu

E-Mail Website
Guest Editor
School of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, China
Interests: GaN; GaAs; optoelectronic technology; device modeling; LED/LD/APD; solar cell; performance characterization
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The rapid evolution of wireless communication systems, 5G/6G networks, and emerging applications in autonomous systems, IoT, and satellite communications has intensified the demand for advanced microwave and millimeter-wave (mmWave) devices and semiconductor devices. These technologies rely on high-frequency circuits and components that operate under nonlinear regimes, necessitating precise characterization, modeling, and design methodologies. This Special Issue focuses on addressing critical challenges in nonlinear device and semiconductor device characterization and modeling, large-signal nonlinear measurement techniques, and mmWave circuit design, which are pivotal for enabling next-generation high-performance systems.

Submissions are invited to explore innovative approaches for improving the accuracy of nonlinear models, advancing time/frequency-domain measurement systems (e.g., NVNA, LSNA), and developing mmWave circuits (e.g., power amplifiers, mixers, antennas) that overcome limitations in efficiency, bandwidth, and thermal stability. Contributions may also address emerging trends such as AI/ML-driven modeling, 3D-integrated mmWave systems, and the integration of wide-bandgap semiconductors. Both theoretical and experimental studies are encouraged to bridge gaps between simulation, measurement, and real-world performance.

This Issue aims to foster interdisciplinary collaboration, highlighting breakthroughs that enhance the reliability and scalability of high-frequency devices for cutting-edge applications.

We look forward to receiving your contributions.

Dr. Jiangtao Su
Dr. Wei Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nonlinear device and circuit models
  • advanced time/frequency-domain measurement systems 
  • microwave and mmWave circuits
  • AI/ML-driven modeling and designing techniques
  • EDA and ETA techniques
  • semiconductor devices

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Published Papers (6 papers)

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Research

13 pages, 1626 KB  
Article
A Dual-Band Filter Using a Multimode Resonator with Asymmetrically Loaded Open-Circuited Stubs for Independent Passband Control
by Qun Chen, Li Zhang and Liqin Liu
Micromachines 2026, 17(3), 281; https://doi.org/10.3390/mi17030281 - 25 Feb 2026
Viewed by 413
Abstract
A novel multimode resonator is designed in this paper. Incorporating two open-circuited stubs of distinct impedances loaded onto a uniform half-wavelength transmission line, the resonator enables the realization of a dual-band filter—with center frequencies at 2.6 GHz and 4.8 GHz—through both simulation and [...] Read more.
A novel multimode resonator is designed in this paper. Incorporating two open-circuited stubs of distinct impedances loaded onto a uniform half-wavelength transmission line, the resonator enables the realization of a dual-band filter—with center frequencies at 2.6 GHz and 4.8 GHz—through both simulation and experimental measurement. Regarding the first passband centered at 2.6 GHz, the device exhibits a return loss |S11| of 13.7 dB, an insertion loss |S21| of 0.37 dB, and a 3 dB bandwidth of 17.3%. As for the second passband with a center frequency of 4.8 GHz, the measured return loss |S11| amounts to 23.6 dB, the insertion loss |S21| measures 0.77 dB, and the 3 dB bandwidth is recorded at 8.75%. Specifically designed for 5G communication systems, the filter achieves three transmission zeros by adopting electrical coupling and 0° feeding, resulting in high selectivity and high isolation. Practical measurements verify that the experimental results are consistent with the simulation results. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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11 pages, 1802 KB  
Article
Design of a Dual-Band Broadband Antenna Based on Structure Reuse
by Huiru Zhang, Junwen Tang and Zhongjun Yu
Micromachines 2026, 17(2), 257; https://doi.org/10.3390/mi17020257 - 16 Feb 2026
Viewed by 525
Abstract
In this paper, a novel dual-band broadband antenna based on structure reuse is proposed. The proposed antenna integrates a slot antenna with a microstrip antenna to achieve dual-band performance. The slot antenna innovatively serves as both a radiating element and a feeding structure [...] Read more.
In this paper, a novel dual-band broadband antenna based on structure reuse is proposed. The proposed antenna integrates a slot antenna with a microstrip antenna to achieve dual-band performance. The slot antenna innovatively serves as both a radiating element and a feeding structure for the microstrip antenna, realizing structure reuse and significantly reducing structural complexity. To enhance the dual-band bandwidth, four symmetrically arranged parasitic strips are introduced, effectively extending the low-frequency bandwidth. Additionally, the high-frequency bandwidth is further improved by the introduction of a U-shaped slot. To analyze its working principle, the characteristics of the current and electric field distributions at each resonant point are given. The measured results indicate that in the low-frequency band, the proposed antenna achieves a relative bandwidth of 22.1% and a peak gain of 6.5 dBi. In the high-frequency band, it realizes a relative bandwidth of 13.6% and a peak gain of 4.6 dBi. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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16 pages, 5144 KB  
Article
An Ultra-Wideband Circularly Polarized Optically Transparent Antenna Using ITO Film
by Kunlun Wang, Mingyang Liu, Guang Lu and Hao Zhang
Micromachines 2026, 17(2), 182; https://doi.org/10.3390/mi17020182 - 29 Jan 2026
Viewed by 552
Abstract
This paper presents a novel broadband circularly polarized optically transparent monopole antenna using indium tin oxide (ITO) and PMMA. The proposed design successfully integrates ultra-wideband circular polarization characteristics with exceptional optical transparency. The antenna, constructed with a three-layer configuration utilizing ITO films as [...] Read more.
This paper presents a novel broadband circularly polarized optically transparent monopole antenna using indium tin oxide (ITO) and PMMA. The proposed design successfully integrates ultra-wideband circular polarization characteristics with exceptional optical transparency. The antenna, constructed with a three-layer configuration utilizing ITO films as both the radiating patch and ground plane, along with transparent PMMA serving as the substrate, features compact dimensions of 40 × 40 × 1 mm3. By leveraging a co-optimized design incorporating a slotted hexagonal-ring radiating patch, triangular perturbation ground plane, and stepped-impedance feeding structure, the antenna achieves a circularly polarized operating bandwidth of 2.8–6.6 GHz (fractional bandwidth of 77.9%), with an axial ratio < 3 dB and return loss < −15 dB. The experimental findings exhibit strong consistency with the simulations, illustrating a high level of visible-light transmittance and radiation patterns characterized by right-hand circular polarization in the positive z-axis direction (+z) and left-hand circular polarization in the negative z-axis direction (−z). This innovative antenna shows great potential for applications in smart windows, display integration, and 5G communication systems. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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18 pages, 4053 KB  
Communication
Mutual Coupling Reduction Between Patch Antennas Using Shorting Pin
by Junxian Li, Jiayi Zhang, Mengyan Fan, Jin Shi, Wen-Wen Yang, Lingyan Zhang, Junxiao Li, Chuan Shao and Kai Xu
Micromachines 2026, 17(2), 168; https://doi.org/10.3390/mi17020168 - 27 Jan 2026
Viewed by 619
Abstract
A simple self-decoupling approach using only a shorting pin is proposed to effectively reduce mutual coupling in multiple-input multiple-output patch antennas. By loading a shorting pin along the polarization direction on one side of the patch antenna, the equivalent inductance of the corresponding [...] Read more.
A simple self-decoupling approach using only a shorting pin is proposed to effectively reduce mutual coupling in multiple-input multiple-output patch antennas. By loading a shorting pin along the polarization direction on one side of the patch antenna, the equivalent inductance of the corresponding source is altered, thereby changing the initial phase of the slot source. This modification, in conjunction with the path effect, creates a mutual coupling null by counteracting the electric fields at the adjacent patch’s feeding position, achieving a reduced mutual coupling level. The simplicity of this decoupling method enables flexibility in practical applications, facilitating adaptation to diverse packaging environments and substrates. Furthermore, the proposed method effectively suppresses mutual coupling between adjacent and non-adjacent elements in multi-element linear arrays, as well as between elements arranged along E-planes and H-planes in planar arrays. To validate the effectiveness of this self-decoupling technique, a two-element decoupled antenna was fabricated and measured. Experimental results demonstrate a decrease in mutual coupling from −22 dB to below −40 dB across the effective frequency range of 4.809 GHz to 4.984 GHz. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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10 pages, 2485 KB  
Article
Design of a UWB Interference-Rejection LNA Based on a Q-Enhanced Notch Filter
by Jiaxuan Li, Yuxin Fan and Fan Meng
Micromachines 2025, 16(12), 1389; https://doi.org/10.3390/mi16121389 - 7 Dec 2025
Viewed by 579
Abstract
A Q-enhanced notch filter for interference-rejection LNAs is proposed in this brief. The active capacitance is introduced into the notch filter to improve the quality factor by the negative resistance effect. The designed notch filter achieves excellent performance with a narrow attenuation bandwidth [...] Read more.
A Q-enhanced notch filter for interference-rejection LNAs is proposed in this brief. The active capacitance is introduced into the notch filter to improve the quality factor by the negative resistance effect. The designed notch filter achieves excellent performance with a narrow attenuation bandwidth from 5.75 GHz to 5.95 GHz, which can be applied to suppress interference from the IEEE 802.11a. To validate the feasibility of the proposed trap filter in both GaAs process technology and principle, a 3–15 GHz ultra-wideband low-noise amplifier was designed and fabricated using a 0.15-micron gallium arsenide pseudomorphs field-effect transistor process. The frequency-dependent feedback loops are employed between gate and drain stages for wideband input matching and gain flatness. The notch filter is inserted between two stages of the LNA. The measurement results show that the interference-rejection LNA achieves a maximum gain of 24.5 dB and a minimum noise figure of 1.8 dB in the operating band. The notch filter has a maximum interference-rejection ratio of 35.2 dB at 5.8 GHz with almost no effect on the desired gain of the LNA. The LNA has a power consumption of 168 mW, including the notch filter with a size of 1.93 × 0.72 mm2. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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14 pages, 1839 KB  
Article
Parallel-Coupled Microstrip-Lines-Based Miniaturized Balanced Bandpass Filters with Flexible Differential-Fed I/O Ports
by Chuan Shao, Guijie Liu, Rong Cai, Rongchang Jiang, Xinnai Zhang and Kai Xu
Micromachines 2025, 16(11), 1238; https://doi.org/10.3390/mi16111238 - 30 Oct 2025
Viewed by 770
Abstract
In this paper, a miniaturized balanced bandpass filter with flexible input/output (I/O) functionality is initially designed based on parallel-coupled microstrip lines. Unlike conventional balanced bandpass filters, the proposed filter features two distinct I/O configurations. In these two states, the I/O ports of the [...] Read more.
In this paper, a miniaturized balanced bandpass filter with flexible input/output (I/O) functionality is initially designed based on parallel-coupled microstrip lines. Unlike conventional balanced bandpass filters, the proposed filter features two distinct I/O configurations. In these two states, the I/O ports of the developed balanced filter are symmetrically arranged in either horizontal or vertical directions. Moreover, the developed balanced filter demonstrates excellent differential-mode and common-mode suppression in both states. To further enhance the common-mode suppression without compromising the differential-mode performance, an asymmetrical quarter-wavelength open-circuited stub is introduced in the middle of the filter when the I/O ports are vertically symmetric. The inclusion of this stub significantly broadens the common-mode suppression bandwidth. More importantly, the developed balanced filters achieve highly compact sizes, which is essential for integration into modern compact RF front-end modules. To verify the feasibility of the proposed design concept, two prototypes are designed and fabricated, whose simulated and measured results are in good agreement. Full article
(This article belongs to the Special Issue Design and Characterization of Microwave/Millimeter Wave Devices and Semiconductor Devices)
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