Advances in Semiconductor Power Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 September 2026 | Viewed by 755

Special Issue Editors


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Guest Editor
School of Integrated Circuits, Peking University, Beijing 100871, China
Interests: cryogenic CMOS; device modeling; reliability physics; advance CMOS technology; design technology cooptimization

Special Issue Information

Dear Colleagues,

This Special Issue focuses on recent advances in semiconductor power devices, emphasizing integrated approaches that combine device design, experimental characterization, fabrication technologies, physics-based modeling, numerical simulation, and artificial intelligence-enabled methodologies. As power electronics continue to play a critical role in energy conversion, electrification, and sustainable technologies, improving device performance, system efficiency, and long-term reliability has become increasingly important. We invite contributions addressing innovative device architectures, material and process developments, advanced fabrication strategies, and experimental studies that reveal transport mechanisms, degradation behavior, and performance limits. Particular interest is given to multi-scale modeling and simulation frameworks that bridge material properties, device physics, and circuit- or system-level operation. Data-driven approaches, including machine learning and AI-assisted design, optimization, and reliability prediction, are especially encouraged, as they are emerging tools to accelerate discovery and reduce development cycles. Topics of interest include, but are not limited to, wide-bandgap and ultra-wide-bandgap devices, thermal and electrical reliability, packaging and integration challenges, system-level co-design, digital twins, and AI-assisted characterization and manufacturing. Both fundamental studies and application-oriented research are welcome, as we aim to advance the next generation of efficient, robust, and intelligent power semiconductor technologies.

Dr. Zeheng Wang
Dr. Zirui Wang
Guest Editors

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Keywords

  • semiconductor power devices
  • wide-bandgap devices
  • ultra-wide-bandgap devices
  • integrated circuits (ICs)
  • fabrication processes
  • reliability engineering
  • advanced packaging
  • emerging semiconductor materials

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Published Papers (2 papers)

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Research

13 pages, 46305 KB  
Article
A New Method for Precisely Designing the Spiral Structure of an SDD with Optimal Electrical Properties
by Xuyang Song, Jun Zhao, Tao Long, Chunxiang Ni, Xinqing Li, Manwen Liu, Xuran Zhu, Zhiyu Liu and Zheng Li
Micromachines 2026, 17(5), 585; https://doi.org/10.3390/mi17050585 - 9 May 2026
Viewed by 208
Abstract
To improve accuracy in calculating the radius of a spiral electrode and the number of turns in existing spiral-type Silicon Drift Detectors (SDDs), in this paper, we propose a method with which to derive first- and second-order approximations of differentiation equations for the [...] Read more.
To improve accuracy in calculating the radius of a spiral electrode and the number of turns in existing spiral-type Silicon Drift Detectors (SDDs), in this paper, we propose a method with which to derive first- and second-order approximations of differentiation equations for the spiral angle θ as a function of its radius r(θ) using Taylor expansion. Combining these with formulas for electrode pitch P(r) and width W(r), we developed a simple and physically intuitive method for obtaining a high-precision single-sided hexagonal spiral SDD. Comparisons of spiral structures calculated using the first- and second-order approximation formulas reveal that the second-order approximation yields more spiral turns, thus allowing superior electrical performance, including smoother electric potential profiles, more-uniform electric field distributions, and better-defined electron drift channels. Full article
(This article belongs to the Special Issue Advances in Semiconductor Power Devices)
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14 pages, 6090 KB  
Article
Design and Development of Sectional-Chain Silicon Drift Detectors with Diversity Elliptical-Shaped Voltage Dividers
by Chunxiang Ni, Tao Long, Jun Zhao, Xuyang Song, Xinqing Li, Manwen Liu, Zhiyu Liu, Xuran Zhu and Zheng Li
Micromachines 2026, 17(5), 549; https://doi.org/10.3390/mi17050549 - 29 Apr 2026
Viewed by 286
Abstract
This paper proposes a sectional-chain silicon drift detector (SDD), featuring an elliptical-shaped voltage divider resistor chain, that can address the issue with traditional concentric ring SDDs, which cannot independently provide voltage division. The study replaces the conventional linear voltage divider with an elliptical [...] Read more.
This paper proposes a sectional-chain silicon drift detector (SDD), featuring an elliptical-shaped voltage divider resistor chain, that can address the issue with traditional concentric ring SDDs, which cannot independently provide voltage division. The study replaces the conventional linear voltage divider with an elliptical structure, using its diversity geometry to improve the uniformity of the electric field distribution within the detector’s sensitive area, effectively solving the problem of distortions of edge electric fields and those between the SDD’s cathode rings in traditional structures. The relevant parameters of the elliptical resistor chain are calculated through formulas, which establish a quantitative relationship between the resistance values and the elliptical geometric dimensions, providing a theoretical basis for electric field uniformity control. A device physics model is then established using TCAD for simulation analysis to obtain key performance parameters: the electric potential and electric field distribution inside the detector, the spatial distribution of electron concentration in the detector bulk, and the electric potential gradient on the detector surface. These parameters provide a design reference for the application of high-performance SDDs in fields such as X-ray energy spectroscopy nuclear physics experiments and space radiation monitoring. Full article
(This article belongs to the Special Issue Advances in Semiconductor Power Devices)
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